SEMITRANS®2
Trench IGBT Modules
SKM 195GB126D
SKM 195GAL126D
Features
!
" # $
Typical Applications*
% &
'()
&
GB GAL
Absolute Maximum Ratings *+,! &
Symbol Conditions Values Units
IGBT
) - *+ , /*00
$- /+0 , *+ , **0 %
10 , /"0 %
$23 $23*#$ 400 %
5) 6 *0
"00 7 5 8 *0 7
) 9 /*00
- /*+ , /0 :
Inverse Diode
$;- /+0 , *+ , /<0 %
10 , //+ %
$;23 $;23*#$; *00 %
$;)3 /0 7 = - /+0 , >00 %
Freewheeling Diode
$;- /+0 , *+ , /<0 %
10 , //+ %
$;23 $;23*#$; *00 %
$;)3 /0 7 = - /+0 , >00 %
Module
$23) *00 %
- ?@0 === A/+0 ,
?@0 === A/*+ ,
%! / = @000
Characteristics *+,! &
Symbol Conditions min. typ. max. Units
IGBT
5 5 ! $ " % + +!1 "!+
$) 5 0! ) - *+ , 0!/ 0!4 %
0 - *+ , / /!*
- /*+ , 0!> /!/
5 0 - *+, @!< "!4 B
- /*+, <!4 > B
$ /+0 %! 5 /+ - *+,= /!< *!/+
- /*+,= * *!@+
/0!+ ;
*+! 5 0 / 3C 0!> ;
0!1 ;
D55 ?1 ===A*0 /410
25 - , + E
& *10
25 * B "00 +0
$ /+0% /" F
& 25 * B - /*+ , +"0
5 6 /+ <0
*@!+ F
2-? $5G 0!/" HIJ
SKM 195GB126D ...
1 01-09-2008 MAJ © by SEMIKRON
http://store.iiic.cc/
SEMITRANS®2
Trench IGBT Modules
SKM 195GB126D
SKM 195GAL126D
Features
!
" # $
Typical Applications*
% &
'()
&
GB GAL
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
; $; /00 %7 5 0 - *+ ,= * *!+
- /*+ ,= /!1
;0 - *+ , /!/ /!*
- /*+ ,
;- *+ , > /4 B
- /*+ , B
$223 $; /+0 % - /*+ , 1" %
D &I& **00 %I: /< :
5 ?/+ 7 "00 +!1 F
2-?K && 0!4* HIJ
Freewheeling diode
; $; /00 %7 5 0 - *+ ,= * *!+
- /*+ ,= /!1
;0 - *+ , /!/ /!*
- /*+ ,
;- *+ , > /4
- /*+ ,
$223 $; /+0 % - /*+ , 1" %
D &I& **00 %I: /< :
5 ?/+ 7 "00 +!1 F
2-?;K && 0!4* HIJ
Module
L 40
2MAM =! ? *+ , 0!<+ B
/*+ , / B
2? & 0!0+ HIJ
3 N 3" 4 + O
3 3+ *!+ + O
/"0
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SKM 195GB126D ...
2 01-09-2008 MAJ © by SEMIKRON
http://store.iiic.cc/
SEMITRANS®2
Trench IGBT Modules
SKM 195GB126D
SKM 195GAL126D
Features
!
" # $
Typical Applications*
% &
'()
&
GB GAL
Zth
Symbol Conditions Values Units
Zth(j-c)l
2 / //+ NIJ
2 * 4@ NIJ
2 4 > NIJ
2 @ * NIJ
/ 0!0@>4
* 0!0/<@
4 0!00/*
@ 0!000*
Zth(j-c)D
2 / *00 NIJ
2 * >0 NIJ
2 4 *" NIJ
2 @ @ NIJ
/ 0!0+@
* 0!001>
4 0!00/
@ 0!01
SKM 195GB126D ...
3 01-09-2008 MAJ © by SEMIKRON
http://store.iiic.cc/
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 195GB126D ...
4 01-09-2008 MAJ © by SEMIKRON
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Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 195GB126D ...
5 01-09-2008 MAJ © by SEMIKRON
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UL Regognized File no. E 63 532
K "/
5G K"/ 5%L K "*
SKM 195GB126D ...
6 01-09-2008 MAJ © by SEMIKRON
http://store.iiic.cc/
