TPCF8304(TE85L,F,M - Toshiba Semiconductor and Storage

TPCF8304

2009-09-29

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)

TPCF8304

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 5.9 S (typ.)

• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)

• Enhancement model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Drain-source voltage VDSS -30 V

Drain-gate voltage (RGS = 20 kΩ) VDGR -30 V

Gate-source voltage VGSS ±20 V

DC (Note 1) ID -3.2

Drain current

Pulse (Note 1) IDP -12.8

Single-device operation

(Note 3a)

PD (1) 1.35

Drain power

dissipation

(t = 5 s) (Note 2a) Single-device value at

dual operation (Note 3b) PD (2) 1.12

Single-device operation

(Note 3a)

PD (1) 0.53

Drain power

dissipation

(t = 5 s) (Note 2b) Single-device value at

dual operation (Note 3b) PD (2) 0.33

Single-pulse avalanche energy (Note 4) EAS 0.67 mJ

Avalanche current IAR -1.6 A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR 0.11 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg -55~150 °C

Note: For Notes 1 to 5, see the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Caution: This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3U1B

Weight: 0.011 g (typ.)

Circuit Configuration

1 2 3 4

8 7 6 5

TPCF8304

2009-09-29

Thermal Characteristics

Characteristic Symbol Max Unit

Single-device operation

(Note 3a) Rth (ch-a) (1) 92.6

Thermal resistance,

channel to ambient

(t = 5 s) (Note 2a) Single-device value at

dual operation (Note 3b) Rth (ch-a) (2) 111.6

°C/W

Single-device operation

(Note 3a) Rth (ch-a) (1) 235.8

Thermal resistance,

channel to ambient

(t = 5 s) (Note 2b) Single-device value at

dual operation (Note 3b) Rth (ch-a) (2) 378.8

°C/W

Marking (Note 6)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

Note 3: a) The power dissipation and thermal resistance values shown are for a single device.

(During single-device operation, power is applied to one device only.)

b) The power dissipation and thermal resistance values shown are for a single device.

(During dual operation, power is evenly applied to both devices.)

Note 4: VDD = -24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -1.6 A

Note 5: Repetitive rating; pulse width limited by max channel ｓtemperature

Note 6: ● to the lower left of the Part No. indicates Pin 1.

Note 7: A dot marking identifies the indication of product Labels.

Without a dot: [[Pb]]/INCLUDES > MCV

With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

25.4

Part No.

(or abbreviation code) F5D

Note 7

Lot code (month) Lot No.

Pin #1 Lot code

(year)

Product-specific code

TPCF8304

2009-09-29

Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±16 V, VDS = 0 V ― ― ±10 μA

Drain cut-off current IDSS V

DS = -30 V, VGS = 0 V ― ― -10 μA

V (BR) DSS ID = -10 mA, VGS = 0 V -30 ― ―

Drain-source breakdown voltage

V (BR) DSX ID = -10 mA, VGS = 20 V -15 ― ―

Gate threshold voltage Vth V

DS = -10 V, ID = -1 mA -0.5 ― -1.2 V

RDS (ON) V

GS = -4.5 V, ID = -1.6 A ― 80 105

Drain-source ON resistance

RDS (ON) V

GS = -10 V, ID = -1.6 A ― 60 72

mΩ

Forward transfer admittance |Yfs| VDS = -10 V, ID = -1.6 A 2.9 5.9 ― S

Input capacitance Ciss ― 600 ―

Reverse transfer capacitance Crss ― 60 ―

Output capacitance Coss

VDS = -10 V, VGS = 0 V, f = 1 MHz

― 70 ―

Rise time tr ― 5.3 ―

Turn-on time ton ― 12 ―

Fall time tf ― 8.4 ―

Switching time

Turn-off time toff

Duty ≤ 1%, tw = 10 μs ― 34 ―

Total gate charge

(gate-source plus gate-drain) Qg ― 14 ―

Gate-source charge 1 Qgs1 ― 1.4 ―

Gate-drain (“Miller”) charge Qgd

VDD

∼

−

-24 V, VGS = -10 V,

ID = -3.2 A

― 2.7 ―

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP ― ― ― -12.8 A

Forward voltage (diode) VDSF IDR = -3.2 A, VGS = 0 V ― ― 1.2 V

RL = 9.38 Ω

VDD

∼

−

-15 V

-10 V

VGS 0 V

4.7 Ω

ID = -1.6 A

VOUT

TPCF8304

2009-09-29

Drain current ID (A)

RDS (ON) – ID

Drain-source ON resistance

RDS (ON) (mΩ)

Gate-source voltage VGS (V)

ID – VGS

Drain current ID (A)

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

VDS – VGS

Drain-source voltage VDS (V)

ID – VDS

Drain current ID (A)

Drain-source voltage VDS (V)

ID – VDS

Drain current ID (A)

⎪Yfs⎪ – ID

Forward transfer admittance

⎪Yfs⎪ (S)

0.1 -1 -10

100

1000

-5

-4

-2

-1

-3

Common source

Ta = 25°C

Pulse test

VGS = -2.3

-2.5

-2.6

-3.0

-2.8

-3.5

-2.7

-10

-6

-4.5

0 -0.2 -0.4 -0.6 -0.8

-1.0

VGS = -2.3 V

Common source

Ta = 25°C

Pulse test

-2.6

-3.5

-3.0

-10

-2.5

-6

-2.7

-2.8

-4.5

-10

-8

-4

-2

-6

0 -1 -2 -3 -4

-5

Ta = −55°C

100

Common source

VDS = -10 V

Pulse test

0 -1 -2 -3

-5

-4

-8

-6

-4

-2

ID = -3.2A

Common source

Ta= 25℃

Pulse test

-1.6

-0.8

0 -2 -4 -6 -8 -10

-1.6

-1.2

-0.8

-0.4

-2.0

100

Ta = −55°C

Common source

VDS = -10 V

Pulse test

-0.1 -0.3 -1 -3 -10

100

= -4.5 V

-1

Common source

Ta = 25°C

Pulse test

TPCF8304

2009-09-29

Drain-source voltage VDS (V)

Capacitance – VDS

Capacitance C (pF)

-0.1

100

1000

-1 -3 -5 -10

-30 -50 -100

Common source

VGS = 0 V

f = 1 MHz

Ta = 25°C

Ciss

Coss

Crss

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source ON resistance

RDS (ON) (mΩ)

Drain-source voltage VDS (V)

IDR – VDS

Drain reverse current IDR (A)

Gate threshold voltage Vth (V)

Ambient temperature Ta (°C)

Vth – Ta

-0.5

-1.0

-1.5

-2.0

−80 −40 0 40 80 120 160

Common source

VDS = -10 V

ID = -1mA

Pulse test

Drain power dissipation PD (W)

Ambient temperature Ta (°C)

PD – Ta

0.1

Common source

Ta = 25°C

Pulse test

0.3

0.5

0.9 1.2

VGS = 0 V

-5.0

-3.0 -1.0

-10

0.6 1.5

2.0

0.8

0 40 80 120 160

0.4

1.2

1.6

200

Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual operation (Note 3b)

ｔ＝5s

(1)

(2)

(3)

(4)

Gate-source voltage VGS (V)

Total gate charge Qg (nC)

Dynamic input/output

characteristics

Drain-source voltage VDS (V)

0 4 8

Common

source

ID = -3.2 A

Ta = 25°C

Pulse test

VDD = -24V

VDS

VGS

12 16

-25

-10

-15

-20

-15

-10

-12

-6

-24 -12

VDD = -6V

-5

-30

160 −40 0 40 80 120 −80

150

120

VGS = -10V

VGS = -4.5V

ID = -0.8A, -1.6A, -3.2A

Common source

Pulse test

TPCF8304

2009-09-29

rth – tw

Pulse width tw (s)

Transient thermal impedance

th (℃/W)

Drain-source voltage VDS (V)

Safe operating area

Drain current ID (A)

0.001

100

1000

0.01 0.1 1 10 100 1000

Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual operation (Note 3b)

(4) (3)

(2)

(1)

Single pulse

-10

-0.1

-100

-10 -1 -100

* Single pulse

Ta = 25°C

Curves must be derated linearly with

increase in temperature.

ID max (pulsed) *

10 ms *

1 ms *

VDSS

-1

-0.1

TPCF8304

2009-09-29

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must

also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the

appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any

information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO

LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling

equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric

power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this

document.

• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to

any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY

WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND

LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO

SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS

FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without

limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile

technology products (mass destruction weapons). Product and related software and technology may be controlled under the

Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product

or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.