1. Product profile
1.1 General description
25 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features
nTypical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA:
uAverage output power = 4.5 W
uPower gain = 15 dB
uDrain efficiency = 24 %
uACPR885k = −45 dBc in 30 kHz bandwidth
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (3400 MHz to 3800 MHz)
nInternally matched for ease of use
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
nRF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
Rev. 02 — 23 December 2008 Product data sheet
Table 1. Typical performance
Typical RF performance at T
case
=25
°
C in a class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDACPR885k ACPR1980k
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
1-carrier N-CDMA[1] 3400 to 3600 28 4.5 15 24 −45[2] −61[2]
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 2 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G38-25 (SOT608A)
1 drain
2 gate
3 source [1]
BLF6G38S-25 (SOT608B)
1 drain
2 gate
3 source [1]
1
23
sym112
1
3
2
1
2
3
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G38-25 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A
BLF6G38S-25 - ceramic earless flanged package; 2 leads SOT608B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 8.2 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Type Typ Max Unit
Rth(j-case) thermal resistance from
junction to case Tcase =80°C;
PL=25W BLF6G38-25 1.8 - K/W
BLF6G38S-25 1.8 - K/W
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 3 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
6. Characteristics
7. Application information
[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 225 mA; PL=P
L(1dB); f = 3600 MHz.
Table 6. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 0.4 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 40 mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 1.5 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 6 8.2 - A
IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 150 nA
gfs forward transconductance VDS = 10 V; ID= 1.4 A - 2.8 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID= 1.4 A - 0.37 0.58 Ω
Crs feedback capacitance VGS = 0 V; VDS =28V;
f=1MHz - 0.59 - pF
Table 7. Application information
Mode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel
bandwidth is 1.2288 MHz; f
1
= 3400 MHz; f
2
= 3500 MHz; f
3
= 3600 MHz; RF performance at
V
DS
=28V; I
Dq
= 225 mA; T
case
=25
°
C; unless otherwise specified, in a class-AB production
circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 4.5 W 12.5 15 - dB
RLin input return loss PL(AV) = 4.5 W - −10 - dB
ηDdrain efficiency PL(AV) = 4.5 W 22 24 - %
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) = 4.5 W [1] -−45 −40 dBc
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 4.5 W [1] -−61 −56 dBc
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 4 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB
7.2.2 Graphs
Table 8. Frame structure
Frame contents Modulation technique Data length
Zone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3
Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692
Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000
VDS =28V; I
Dq = 225 mA; OFDMA signal;
frame duration = 5 ms; bandwidth = 10 MHz;
frequency band = WCS; n = 28 / 25; G=1/8;
FFT = 1024; zone type = PUSC;
number of symbols = 46; number of subchannels = 30.
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
VDS = 28 V; IDq = 225 mA; f = 3500 MHz;
OFDMA signal; frame duration = 5 ms;
bandwidth = 10 MHz; frequency band = WCS;
n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC;
number of symbols = 46; number of subchannels = 30.
Fig 1. EVM as function of load power; typical values Fig 2. Power gain anddrain efficiency as functions of
average load power; typical values
PL (W)
10−1102
101
001aah594
12
18
6
24
30
EVM
(%)
0
(1)
(2)
(3)
001aah595
14
12
16
18
Gp
(dB)
10
24
12
36
48
ηD
(%)
0
PL(AV) (W)
10−1102
101
Gp
ηD
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 5 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
VDS =28V;I
Dq = 225 mA; f =3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS;
n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30.
(1) Low frequency component
(2) High frequency component
Fig 3. Adjacent channel power ratio as function of average load power; typical values
001aah596
−41
−53
−29
−17
ACPR
(dBc)
−65
PL(AV) (W)
10−1102
101
ACPR10M
ACPR20M
ACPR30M
(2)
(1)
(1)
(2)
(2)
(1)
PL(AV) = 4.5 W. VDS = 28 V; IDq = 350 mA; PL(AV) = 4.5 W; single carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 4. Power gain and drain efficiency as functions of
frequency; typical values Fig 5. Adjacent channel power ratio as function of
frequency; typical values
f (MHz)
3400 360035503450 3500
001aah597
14
15
13
16
17
Gp
(dB)
12
24
25
23
26
27ηD
(%)
22
Gp
ηD
f (MHz)
3400 360035503450 3500
001aah598
−60
−50
−40
ACPR
(dBc)
−70
ACPR885k
ACPR1500k
ACPR1980k
(2)
(1)
(1)
(2)
(1)
(2)
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 6 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
VDS =28V; I
Dq = 225 mA; f = 3500 MHz; single carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
VDS = 28 V; IDq = 225 mA; f = 3500 MHz; single carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 6. Power gain and drain efficiency as functions of
load power; typical values Fig 7. Adjacent channel power ratio as function of
average load power; typical values
VDS =28V; I
Dq = 225 mA; single carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
VDS = 28 V; IDq = 225 mA; single carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
Fig 8. Power gain as function of load power; typical
values Fig 9. Input power as function of load power; typical
values
001aah599
14
12
16
18
Gp
(dB)
10
24
12
36
48
ηD
(%)
0
PL (W)
10−1102
101
Gp
ηD
PL (W)
10−1102
101
001aah600
−60
−50
−70
−40
−30
ACPR
(dBc)
−80
ACPR885k
ACPR1500k
ACPR1980k
(2)
(1)
(1)
(2)
(2)
(1)
001aah601
14
12
16
18
Gp
(dB)
10
PL (W)
10−1102
101
(2)
(1)
(3)
001aah602
0.4
0.2
0.6
0.8
Pi
(W)
0
PL (W)
10−1102
101
(3)
(2)
(1)
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 7 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
8. Test information
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
001aah603
BLF6G38-25
OUTPUT REV1
3.4 - 3.6 GHz
NXP
VDD
VGG
C20
C21
C18
C9
C8
C14
R1
C12
C10
C1
C11
R2
C15
C13
C7
C6
C4
C2
C3
C5
C19
C17C16
L1
R3
Table 9. List of components (see Figure 10)
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 22 pF ATC 100A or equivalent
C2, C3 multilayer ceramic chip capacitor 3 pF ATC 100A or equivalent
C4, C5, C6, C7, C8, C9, C18 multilayer ceramic chip capacitor 10 pF ATC 100A or equivalent
C10, C11 multilayer ceramic chip capacitor 24 pF ATC 100A or equivalent
C12, C13 multilayer ceramic chip capacitor 4.7 µF; 50 V TDK C4532X7R1H475M or equivalent
C14, C15 multilayer ceramic chip capacitor 1 nF ATC 700A or equivalent
C16, C17 multilayer ceramic chip capacitor 100 nF Vishay VJ1206Y104KXB or equivalent
C19 multilayer ceramic chip capacitor 10 µF; 50 V TDK C5750X7R1H106M or equivalent
C20 electrolytic capacitor 470 µF; 63 V
C21 multilayer ceramic chip capacitor 10 pF ATC 100B or equivalent
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 8 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
L1 ferrite SMD bead - Ferroxcube BDS3/3/4.6-4S2 or equivalent
R1, R2 SMD resistor 20 ΩSMD 1206
R3 SMD resistor 9.1 ΩSMD 1206
Table 9. List of components (see Figure 10)
…continued
Component Description Value Remarks
Table 10. Measured test circuit impedances
f ZSZL
MHz Ω Ω
3400 14.65 + j29.87 13.46 + j3.58
3450 14.16 + j28.69 13.56 + j4.12
3500 14.56 + j30.52 13.76 + j4.74
3550 17.49 + j30.11 13.97 + j5.41
3600 15.50 + j29.36 14.16 + j5.95
Fig 11. Definition of transistor impedance
001aag189
drain
ZL
ZS
gate
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 9 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
9. Package outline
Fig 12. Package outline SOT608A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT608A 01-02-22
02-02-11
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 2 leads SOT608A
p
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
w1AB
M M M
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
7.24
6.99 0.15
0.10 10.21
10.01 10.29
10.03 15.75
14.73 9.91
9.65
4.62
3.76
cU2
0.25 0.5115.24
qw
2
w1
F
1.14
0.89
U1
20.45
20.19
p
3.30
2.92
Q
1.70
1.35
EE
1
10.21
10.01
inches 0.285
0.275 0.006
0.004 0.402
0.394
D1
10.29
10.03
0.405
0.395 0.405
0.395 0.620
0.580 0.390
0.380
0.182
0.148 0.010 0.0200.600
0.045
0.035 0.805
0.795
0.130
0.115 0.067
0.053
0.402
0.394
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 10 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
Fig 13. Package outline SOT608B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT608B
SOT608B
06-11-27
06-12-06
UNIT A
mm 4.62
3.76 7.24
6.99 0.15
0.10 10.29
10.03 10.21
10.01 10.29
10.03 1.14
0.89 1.70
1.35 10.24
9.98 0.51
b
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
Ceramic earless flanged package; 2 leads
0 5 mm
scale
c D
10.21
10.01
D1E E1F H
15.75
14.73
Q U1U2
10.24
9.98
inch 0.182
0.148 0.285
0.275 0.006
0.004 0.405
0.395 0.402
0.394 0.405
0.395 0.045
0.035 0.067
0.053 0.403
0.393 0.020
0.402
0.394 0.620
0.580 0.403
0.393
w1
M
w1A
M
1
2
b
H
A
3
D
A
F
D1
U1
E
E1
U2
c
Q
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 11 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
10. Abbreviations
11. Revision history
Table 11. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
ESD ElectroStatic Discharge
EVM Error Vector Magnitude
FCH Frame Control Header
FFT Fast Fourier Transform
IBW Instantaneous BandWidth
IS-95 Interim Standard 95
LDMOS Laterally Diffused Metal-Oxide Semiconductor
N-CDMA Narrowband Code Division Multiple Access
OFDMA Orthogonal Frequency Division Multiple Access
PAR Peak-to-Average power Ratio
PUSC Partial Usage of SubChannels
RF Radio Frequency
QAM Quadrature Amplitude Modulation
QPSK Quadrature Phase Shift Keying
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
WCS Wireless Communications Service
WiMAX Worldwide Interoperability for Microwave Access
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G38-25_BLF6G38S-25_2 20081223 Product data sheet - BLF6G38-25_BLF6G38S-25_1
Modifications: •Changed the maximum drain current and the maximum junction temperature in
Table 4 on page 2
•Moved impedance information to Section 8
BLF6G38-25_BLF6G38S-25_1 20080218 Preliminary data sheet - -
BLF6G38-25_BLF6G38S-25_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 December 2008 12 of 13
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 December 2008
Document identifier: BLF6G38-25_BLF6G38S-25_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4
7.2.1 WiMAX signal description. . . . . . . . . . . . . . . . . 4
7.2.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Single carrier N-CDMA broadband
performance at 9 W average . . . . . . . . . . . . . . 5
7.3.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
