A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 50 mA 110 V
IDSS VDS = 50 V VGS = 0 V 2.5 mA
IGSS VDS = 0 V VGS = ±20 V 1.0 µA
VGS(th) ID = 50 mA VDS = 10 V 2.0 4.5 V
∆VGS ID = 50 mA VDS = 10 V 100 mV
gfs ID = 5.0 A VDS = 10 V 4.5 6.2 S
RDS(on) ID = 5.0 A VDS = 10 V 0.2 0.3 Ω
IDSX VGS = 10 V VDS = 10 V 25 A
Cis
Cos
Crs VDS = 50 V VGS = 0 V f = 1.0 MHz 480
190
14
pF
HF/VHF POWER MOS TRANSISTOR
BLF177
DESCRIPTION:
The ASI BLF177 is a N-Channel
Enhancement-Mode MOSFET
RF Power Transistor Designed for
industrial and military applications in
the HF/ VHF frequency range.
MAXIMUM RATINGS
ID 16 A
VDS 110 V
VGS ±20 V
PDISS 220 W @ Tmb = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 0.8 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18 .2 8
.125 / 3.1 8
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24 .8 9
.110 / 2.79
.175 / 4.4 5
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.1 8
.495 / 12.57 .505 / 12.83
.280 / 7.11
D
G
S
S
