2N4920
PNP General
Purpose Power
Transistors
Features
• Designed for driver circuits, switching, and amplifier applications.
These high-performance plastic devices feature.
• Medium-Power Plastic PNP Silicon Transistors.
• Low Saturation Voltage: VCE(sat)=0.6V(Max) @ IC=1.0A
• Excellent Power Dissipation Due to Thermopad Construction:
PD=30W @ TC=25OC
• Marking:2N4920
• Gain Specified to IC=1.0A
Maximum Ratings*
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current, Continuous(1) 1.0
3.0 A
IB Base Current 1.0 A
PD Total Device Dissipation
Derate above 25OC 30
0.24 W
W/OC
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics(2)
Symbol Rating Max Unit
RJC Thermal Resistance, Junction to Case 4.16 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Breakdown Voltage(3)
(IC=0.1Adc, IB=0) 80 --- Vdc
ICEO Collector Cutoff Current
(VCE=40Vdc, IB=0) --- 0.5 mAdc
ICEX Collector Cutoff Current
(VCE=Rated VCEO, VEB(off)=1.5Vdc) --- 0.1 mAdc
ICBO Collector Cutoff Current
(VCB=Rated VCEO, IE=0) --- 0.1 mAdc
IEBO Emitter Cutoff Current
(VBE=5.0Vdc, IC=0) --- 1.0 mAdc
* Indicates JEDEC Registered Data for 2N4918 Series
(1) The 1.0A maximum IC value is based upon JEDEC current gain requirements.
The 3.0A maximum value is based upon actual current-handling capability of
the device.
(2) Recommend use of thermal compound for lowest thermal resistance.
(3) Pulse Test: PW=300us, Duty Cycle=2.0%
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PIN 1. EMITTER
PIN 2. COLLECTOR
1 2 3
PIN 3. BASE
Revision: 3 2006/05/17
omponents
20736 Marilla Street Chatsworth
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• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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Symbol Parameter Min Max Units
ON CHARACTERISTICS
hFE DC Current Gain (1)
(VCE=1.0Vdc, IC=50mAdc)
(VCE=1.0Vdc, IC=500mAdc)
(VCE=1.0Vdc, IC=1.0Adc)
40
30
10 150 ---
VCE(sat) Collector-Emitter Saturation Voltage (1)
(IC=1.0Adc, IB=0.1Adc) --- 0.6 Vdc
VBE(sat) Base-Emitter Saturation Voltage (1)
(IC=1.0Adc, IB=0.1Adc) --- 1.3 Vdc
VBE(on) Base-Emitter On Voltage (1)
(IC=1.0Adc, VCE=1.0Vdc) --- 1.3 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current-Gain Bandwidth Product
(IC=250mAdc, VCE=10Vdc, f=1.0MHz) 3.0 --- MHz
COB Output Capacitance
(VCB=10Vdc, IE=0, f=100KHz) --- 100 pF
hfe Small-Signal Current Gain
(IC=250mAdc, VCE=10Vdc, f=1.0KHz) 25 --- ---
* Pulse Test: Pulse Width=300us, Duty Cycle=2.0%
40
30
20
10
025 50 75 100 125 150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
MCC
2N4920
Revision: 3 2006/05/17
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Figure 2. Switching Time Equivalent Test Circuit
5.0
10
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 20
t, TIME (s)µ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.05 20 30 50 70 100 200 700 1000
Vin
t1
VBE(off)
APPROX 9.0 V
TURN-OFF PULSE
t3
t2
APPROX
-11 V
VCC
SCOPE
RB
Cjd<<Ceb
+4.0 V
t1 < 15 ns
100 < t2 < 500 µs
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
Vin
RC
0.07
3.0 TJ = 25°C
TJ = 150°C
IC/IB = 10, UNLESS NOTED
VCC = 60 V
VCC = 30 V
VCC = 30 V
VBE(off) = 0
300 500
0
0Vin
APPROX
-11 V
RB and RC
varied to
obtain desired
current levels
tr
VBE(off) = 2.0 V
VCC = 60 V
td
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
10
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1 2.0 3.0 5.0 10 20 30 50 10070
0.2
IC, COLLECTOR CURRENT (AMP)
TJ = 150°C
dc
5.0 ms 100 µs
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
1.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25°C
MCC
2N4920
Revision: 3 2006/05/17
TM
Micro Commercial Components
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tµ
s, STORAGE TIME (s)
′
tµ
f, FALL TIME (s)
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05 20 30 50 70 500 700 1000
ts′ = ts - 1/8 tf
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05 20 30 50 70 500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 10
IC/IB = 20
IC/IB = 10
IB1 = IB2
VCC = 30 V
IB1 = IB2
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10 3.05.01020302003005002000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
00.30.51.02.05.0102050200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25°C
0.25 A 0.5 A 1.0 A
700
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 1.0 V
50
30
20
5010010003.030100
MCC
2N4920
Revision: 3 2006/05/17
TM
Micro Commercial Components
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-0.2
102
Figure 12. Collector Cut–Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
101
100
10-1
, COLLECTOR CURRENT (A)µIC
10-2
103
-0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5
VCE = 30 V
TJ = 150°C
100°C
25°C
FORWARD
IC = ICES
104
+2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0 10 20 30 50 100 200 2000
TJ = -55°C to +100°C
TEMPERATURE COEFFICIENTS (mV/ C)°
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
θVB FOR VBE
*θVC FOR VCE(sat)
TJ = 100°C to 150°C
*APPLIES FOR IC/IB < hFE@VCE 1.0V
2
+1.0
300 500 1000
REVERSE
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
108
0
Figure 10. Effects of Base–Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
30 60 90 120 150
107
105
104
103
VCE = 30 V
IC = 10 ICES
IC = 2x ICES
IC ≈ICES
ICES VALUES
OBTAINED FROM
FIGURE 13
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0 10 20 30 50 100 200 300 2000
1.2
0.9
0.6
0.3
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
Figure 11. “On” Voltage
3.0 500 1000
VBE @ VCE = 2.0 V
MCC
2N4920
Revision: 3 2006/05/17
TM
Micro Commercial Components
www.mccsemi.com
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MCC
Revision: 3 2006/05/17
TM
Micro Commercial Components
www.mccsemi.com
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