D
F
N
1
0
06
D
-
2
PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
4 August 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection, encapsulated in a leadless ultra small
DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
2. Features and benefits
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 20 V
Low forward voltage VF ≤ 490 mV
AEC-Q101 qualified
Ultra small and leadless SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C;
square wave
- - 1 AIF(AV) average forward
current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;
square wave
[1] - - 1 A
VRreverse voltage Tj = 25 °C - - 20 V
VFforward voltage IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
- 428 490 mV
IRreverse current VR = 10 V; Tj = 25 °C - 28 50 µA
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 2 / 14
Symbol Parameter Conditions Min Typ Max Unit
trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
- 1.6 - ns
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode[1]
2 A anode
Transparent
top view
21
DFN1006D-2 (SOD882D)
sym001
1 2
[1] The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMEG2010BELD DFN1006D-2 DFN1006D-2: leadless ultra small plastic package; 2
terminals
SOD882D
7. Marking
Table 4. Marking codes
Type number Marking code
PMEG2010BELD 0000 1001
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 3 / 14
VENDOR CODE
MARKING CODE
(EXAMPLE)
CATHODE BAR READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac477
Fig. 1. SOD882D binary marking code description
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage Tj = 25 °C - 20 V
IFforward current Tsp ≤ 130 °C - 1 A
δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C;
square wave
- 1 AIF(AV) average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 80 °C;
square wave
[1] - 1 A
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 3 A
IFSM non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave - 6 A
[2][3] - 370 mW
[4][3] - 735 mW
Ptot total power dissipation Tamb ≤ 25 °C
[1][3] - 1135 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 4 / 14
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2][3] - - 340 K/W
[1][4][3] - - 170 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air
[1][5][3] - - 110 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
[6] - - 25 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
006aac928
tp (s)
10-3 102103
10110-2 10-1
102
103
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33 0.25
0.2 0.1
0.02
0.01
0
0.05
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 5 / 14
006aac929
tp (s)
10-3 102103
10110-2 10-1
102
103
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75 0.5
0.33
0.25
0.2 0.1
0.02
0.01
00.05
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac930
tp (s)
10-3 102103
10110-2 10-1
102
103
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75 0.5
0.33
0.25
0.2
0.1
0.02
0.01
00.05
Ceramic PCB, Al2O3, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 6 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
IF = 100 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tj = 25 °C
- 266 310 mV
IF = 500 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tj = 25 °C
- 353 390 mV
VFforward voltage
IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
- 428 490 mV
VR = 10 V; Tj = 25 °C - 28 50 µAIRreverse current
VR = 20 V; Tj = 25 °C - 87 200 µA
Cddiode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 31 40 pF
trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
- 1.6 - ns
VFRM peak forward recovery
voltage
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 565 - mV
006aad057
10-2
10-3
1
10-1
10
IF
(A)
10-4
VF (V)
0 0.70.5 0.60.40.30.1 0.2
(1) (2)
(3) (4) (5)
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
Fig. 5. Forward current as a function of forward
voltage; typical values
006aac932
10-1
10-2
10-3
10-4
10-5
10-6
10-7
IR
(A)
10-8
VR (V)
0 20155 10
(1)
(2)
(3)
(4)
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 6. Reverse current as a function of reverse
voltage; typical values
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 7 / 14
VR (V)
0 20155 10
006aac933
40
50
30
20
10
60
70
Cd
(pF)
0
f = 1 MHz; Tamb = 25 °C
Fig. 7. Diode capacitance as a function of reverse
voltage; typical values
006aad058
IF(AV) (A)
0 1.51.00.5
0.4
0.2
0.6
0.8
PF(AV)
(W)
0
(1)
(2)
(3)
(4)
Tj = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 8. Average forward power dissipation as a
function of average forward current; typical
values
VR (V)
0 20155 10
006aac935
0.4
0.8
1.2
PR(AV)
(W)
0.0
(1)
(2)
(3)
(4)
Tj = 125 °C
(1) δ = 1 (DC)
(2) δ = 0.9; f = 20 kHz
(3) δ = 0.8; f = 20 kHz
(4) δ = 0.5; f = 20 kHz
Fig. 9. Average reverse power dissipation as a
function of reverse voltage; typical values
Tamb (°C)
0 50 100 150 1751257525
006aad059
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
Tj = 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 10. Average forward current as a function of
ambient temperature; typical values
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 8 / 14
Tamb (°C)
0 50 100 150 1751257525
006aad060
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 11. Average forward current as a function of
ambient temperature; typical values
Tamb (°C)
0 50 100 150 1751257525
0006aad061
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 12. Average forward current as a function of
ambient temperature; typical values
Tsp (°C)
0 50 100 150 1751257525
006aad062
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Tj = 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 13. Average forward current as a function of solder point temperature; typical values
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 9 / 14
11. Test information
Fig. 14. Reverse recovery definition
001aab912
time
time
VFRM
VF
IF
VF
Fig. 15. Forward recovery definition
tp
tcy
P
t
006aac658
duty cycle δ =
tp
tcy
Fig. 16. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 10 / 14
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
12-05-01Dimensions in mm
0.65
0.30
0.22
0.30
0.22
0.55
0.45
0.65
0.55
0.4
max
1.05
0.95
2
cathode marking on top side (if applicable)
1
Fig. 17. Package outline DFN1006D-2 (SOD882D)
13. Soldering
solder lands
solder resist
solder paste
sod882d_fr
Dimensions in mm
1.4
0.2
0.3
0.4
1
1.3
0.8
(2×)
0.6
(2×)
0.7
(2×)
Fig. 18. Reflow soldering footprint for DFN1006D-2 (SOD882D)
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 11 / 14
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMEG2010BELD v.2 20150804 Product data sheet - PMEG2010BELD v.1
Modifications: Section Marking: updated figure 1.
PMEG2010BELD v.1 20120418 Product data sheet - -
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 12 / 14
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 13 / 14
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG2010BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 14 / 14
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 6
11 Test information ..................................................... 9
11.1 Quality information ............................................. 10
12 Package outline ................................................... 10
13 Soldering .............................................................. 10
14 Revision history ...................................................11
15 Legal information .................................................12
15.1 Data sheet status ............................................... 12
15.2 Definitions ...........................................................12
15.3 Disclaimers .........................................................12
15.4 Trademarks ........................................................ 13
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 August 2015
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