UNISONIC TECHNOLOGIES CO., LTD
2SA1020 PNP SILICON TRANSISTOR
www.unisonic.com.tw
1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R211-007,B
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power
switching applications.
FEATURES
*Low collector saturation voltage:
V
CE(SAT)
=-0.5V(max.) (I
C
=-1A)
*High speed switching time: t
STG
=1.0µs(Typ.)
*Complement to UTC 2SC2655
1
SOT-89
TO-92NL
1
*Pb-free plating product number:2SA1020L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
2SA1020-x-AB3-R 2SA1020L-x-AB3-R SOT-89 B C E Tape Reel
2SA1020-x-T9N-B 2SA1020L-x-T9N-B TO-92NL E C B Tape Box
2SA1020-x-T9N-K 2SA1020L-x-T9N-K TO-92NL E C B Bulk
2SA1020L-x-AB3-R (1)P ac k ing T y pe
(2)P ack age T y pe
(3)Rank
(4 )Lead Plating
(1) B: Tap e Bo x, K: Bul k, R : Tap e R ee l
(2) AB3: SOT -89, T9 N: TO -9 2N L
(3) x: refer to Classification of h
FE1
( 4) L: Lead Fr ee P lating, Blank: P b/S n
2SA1020 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW -R211-007,B
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current Ic -2 A
TO-92NL 900 mW
Collector Power Dissipation SOT-89 P
C
500 mW
Junction Temperature T
J
150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage BV
CEO
Ic=-10mA, I
B
=0 -50 V
Collector Cut-off Current I
CBO
V
CB
=-50V, I
E
=0 -1.0 µA
Emitter Cut-off Current I
EBO
V
EB
=-5V, I
C
=0 -1.0 µA
DC Current Gain h
FE1
h
FE2
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A 70
40 240
Collector to Emitter Saturation Voltage V
CE(SAT)
Ic=-1A, I
B
=-0.05A -0.5 V
Base to Emitter Saturation Voltage V
BE(SAT)
Ic=-1A, I
B
=-0.05A -1.2 V
Transition Frequency f
T
V
CE
=-2V, Ic=-0.5A 100 MHz
Collector Output Capacitance Cob V
CB
=-10V, I
E
=0, f=1MHz 40 pF
Turn-on Time t
ON
0.1 µs
Storage Time t
STG
1.0 µs
Switching Time Fall Time t
F
0.1 µs
CLASSIFICATION OF h
FE1
RANK O Y
RANGE 70 - 140 120 - 240
2SA1020 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW -R211-007,B
TYPICAL CHARACTERISTICS
2SA1020 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW -R211-007,B
TYPICAL CHARACTERISTICS(Cont.)
TO-92NL
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
