VEMD1060X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES * Package type: surface mount * Package form: 0805 top view * Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 * Radiant sensitive area (in mm2): 0.23 * AEC-Q101 qualified * High photo sensitivity * High radiant sensitivity * Excellent Ira linearity * Suitable for visible and near infrared radiation DESCRIPTION * Fast response times VEMD1060X01 is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 0.23 mm2 sensitive area detecting visible and near infrared radiation. * Angle of half sensitivity: = 70 * Floor life: 72 h, MSL 4, according to J-STD-020 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS * High speed photo detector * Small signal detection * Proximity sensors PRODUCT SUMMARY COMPONENT Ira (A) (deg) 0.1 (nm) VEMD1060X01 1.8 70 350 to 1070 Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD1060X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 top view Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / ambient Rev. 1.1, 30-Jun-16 SYMBOL VALUE VR 20 UNIT V PV 215 mW Tj 110 C Tamb -40 to +110 C C Tstg -40 to +110 According to reflow solder profile Fig. 6 Tsd 260 C According to EIA / JESD 51 RthJA 270 K/W Document Number: 84295 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Temperature coefficient of Vo Short circuit current TYP. MAX. UNIT IF = 50 mA VF - 0.9 1.1 V V(BR) 20 - - V VR = 10 V, E = 0 Iro - 0.01 5 nA VR = 0 V, f = 1 MHz, E = 0 CD - 3.8 - pF VR = 3 V, f = 1 MHz, E = 0 CD - 1.7 - pF Reverse dark current Open circuit voltage MIN. IR = 100 A, E = 0 Breakdown voltage Diode capacitance SYMBOL Ee = 1 mW/cm2, = 950 nm Vo - 350 - mV Ee = 1 mW/cm2, = 950 nm TKVo - -2.6 - mV/K Ee = 1 mW/cm2, = 950 nm Ik - 1.8 - A Ee = 1 mW/cm2, = 835 nm TKIk - 0.1 - %/K Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 1.4 1.8 3 A Ee = 1 mW/cm2, = 890 nm, VR = 5 V Ira - 2.6 - A Angle of half sensitivity - 70 - deg Wavelength of peak sensitivity p - 820 - nm Range of spectral bandwidth 0.1 - 350 to 1070 - nm Temperature coefficient of Ik Reverse light current Rise time VR = 5 V, RL = 50 , = 830 nm tr - 60 - ns Fall time VR = 5 V, RL = 50 , = 830 nm tf - 80 - ns BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. 1.4 VR = 10 V 10 1 0.1 0.01 0.001 0.0001 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.1, 30-Jun-16 Ira rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 100 VR = 10 V 940 nm 1.2 865 nm 1.0 835 nm 0.8 0.6 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 84295 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors S()rel - Relative Spectral Sensitivity VR = 5 V, = 950 nm 10 1 0.1 0.01 0.01 0.1 1 Ee - Irradiance 1.0 0.8 0.6 0.4 0.2 0 400 10 500 600 700 800 Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 5.0 mW/cm2 2.0 mW/cm2 1.0 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 0.02 mW/cm2 0.01 mW/cm2 = 950 nm 0.01 0.1 1 10 100 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (A) 0 10 mW/cm2 10 900 1000 1100 - Wavelength (nm) (mW/cm2) 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 0.4 0.2 - Angular Displacement Ira - Reverse Light Current (A) 100 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 4.0 f = 1 MHz, E = 0 CD - Capacitance (pF) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.001 0.01 0.1 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.1, 30-Jun-16 Document Number: 84295 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK 300 Temperature (C) max. 260 C 245 C 255 C 240 C 217 C 250 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 72 h 100 max. ramp down 6 C/s 50 FLOOR LIFE max. 30 s 150 max. 120 s Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Conditions: Tamb < 30 C, RH < 60 % Moisture sensitivity level 4, according to J-STD-020. max. ramp up 3 C/s DRYING 0 0 50 19841 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %. PACKAGE DIMENSIONS in millimeters 20018 Rev. 1.1, 30-Jun-16 Document Number: 84295 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters REEL DIMENSIONS in millimeters 8.4 +2.5 O 177.8 max. O 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. O 20.2 min. 1.5 min. O 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.1, 30-Jun-16 technical drawings according to DIN specifications Document Number: 84295 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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