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© 2006 IXYS All rights reserved
0647
FMM 150-0075P
IXYS reserves the right to change limits, test conditions and dimensions.
ID25 = 150 A
VDSS =75V
RDS(on) typ = 3.2 mΩΩ
ΩΩ
Ω
Trench Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PACTM
Features
• trench MOSFET
- very low on state resistance RDSon
- fast switching
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• automotive
- AC drives - starter generator for 42V
etc.
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters - between 12V
and 42V system etc.
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
• battery supplied systems
- choppers or inverters for drives in
hand held tools
- battery chargers
MOSFET T1/T2
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to TVJmax 75 V
VGS ±20 V
ID25 TC = 25°C 150 A
ID90 TC = 90°C 120 A
IF25 (body diode) TC = 25°C 150 A
IF90 (body diode) TC = 90°C 100 A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = ID90; on chip level 3.2 4.2 mΩ
VGSth VDS = 20 V; ID = 1 mA 2 4 V
IDSS VDS = 75 V; VGS = 0 V; TVJ = 25°C 10 µA
TVJ = 125°C 0.1 mA
IGSS VGS = ±20 V; VDS = 0 V 200 nA
Qg225 nC
Qgs 30 nC
Qgd 85 nC
td(on) 75 ns
tr100 ns
td(off) 400 ns
tf90 ns
Eon 0.31 mJ
Eoff 0.5 mJ
Erec(off) 0.05 mJ
VF(body diode) IF = 75 A; VGS = 0 V 1.1 1.5 V
trr (body diode) IF = 20A; -di/dt = 100A/µs; VDS = 30V 90 ns
RthJC 0.6 K/W
RthJH with heat transfer paste 1.0 K/W
VGS= 10 V; VDS = 60 V; ID = 50 A
Inductive load, TVJ = 125°C
VGS= 10 V; VDS = 30 V
ID = 120 A; RG = 10 Ω
T1
T2
1
5
3
4
2
1
5
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© 2006 IXYS All rights reserved
0647
FMM 150-0075P
Dimensions in mm (1 mm = 0.0394")
Component
Symbol Conditions Maximum Ratings
IRMS per pin 75 A
TVJ -55...+175 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin-chip Rpin-P2 > RDS(on) + Rpin-chip 1.6 mΩ
Cpcoupling capacity between shorted 40 pF
pins and mounting tab in the case
dS,dApin - pin 1.7 mm
dS,dApin - backside metal 5.5 mm
Weight 9g
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© 2006 IXYS All rights reserved
0647
FMM 150-0075P
VDS [V]
01 234 56
ID[A]
0
50
100
150
200
250
300
350
VDS [V]
0123456
ID [A]
0
50
100
150
200
250
300
350
TJ[°C]
-25 0 25 50 75 100 125 150
RDS(ON) - Normalized
0.0
0.5
1.0
1.5
2.0
2.5
VGS [V]
01234567
ID-[A]
0
50
100
150
200
250
300
6V
6.5 V
7V
-25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
VDDS [V] Normalized @25°C
TJ [°C]
TJ= 25°C
TJ= 25°C
TJ= 125°C
5.5 V
5V
TJ= 25°C 7V
6.5 V
6V
5.5 V
5V
RDS(on) normalized
TJ[°C]
0 50 100 150 200 250 300 35
0
RDS(ON) -Normalized
0.5
1.0
1.5
2.0
2.5
3.0
VGS =20V
7V
10 V
15 V
5V 5.5 V 6V 6.5 V
VGS =
20 V
15 V
10 V
VGS =
20 V
15 V
10 V
VGS = 10 V
ID= 150 A
VGS =10V
ID=150A
TJ= 125°C
Fig. 1 Drain source breakdown voltage VDSS
vs. junction temperature TVJ
Fig. 2 Typical transfer characteristic
Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic
Fig. 5 Drain source on-state resistance RDS(on)
vs. junction temperature TVJ
Fig. 6 Drain source on-state
resistance RDS(on) versus ID
4 - 5
© 2006 IXYS All rights reserved
0647
FMM 150-0075P
QG[nC]
0 50 100 150 200 250 300
ID-[A]
0
3
6
9
12
15
td(on)
tr
VGS [V]
Erec(off)
0 20406080100120140160
0.0
0.1
0.2
0.3
0.4
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
200
400
600
800
0 20 40 60 80 100 120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
0 20 40 60 80 100 120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
500
1000
1500
2000
2500
3000
3500
4000
VGS [V]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
200
VDS =15 V
VDS =55 V
ID= 150 A
TJ = 25°C
VDS =30V
VGS =+10/0V
RG= 10
TJ=125°C
Eon
Eon,E
rec (off) [mJ]
ID[A] ID [A]
t[ns]
VDS = 30 V
VGS =+10/0V
RG=10
TJ=125°C
Eoff tf
td(off)
t[ns]
Eon,E
rec(off) [mJ]
t[ns]
VDS =30V
VGS =+10/0V
ID= 150 A
TJ=125°C
VDS = 30 V
VGS =+10/0V
ID=150A
TJ= 125°C
Eon
Erec(off)
td(on)
tr
RG[ ]
Eoff [mJ]
t[ns]
RG[ ]
Eoff
td(off)
tf
Eoff [mJ]
Fig.7 Gate charge characteristic Fig. 8 Drain current ID vs. case temperature TC
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
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© 2006 IXYS All rights reserved
0647
FMM 150-0075P
-diF/dt [A/µs]
400 800 1200 1600
IRM [A]
0
10
20
30
40
50
60
70
-diF/dt [A/µs]
400 800 1200 1600
trr [ns]
0
20
40
60
80
100
120
VSD [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IS [A]
0
50
100
150
200
250
300
-diF/dt [A/µs]
400 800 1200 1600
Qrr [µC]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VR = 30 V
TVJ = 125°C
TJ = -25°C
25°C
125°C
150°C
IF = 50 A
150 A
IF = 50 A
150 A
IF = 50 A
150 A
VSD - Volts
0.2 0.4 0.6 0.8 1.0
ID - Amperes
0
10
20
30
40
50
TJ = 125°C
TJ = 25°C
Time - Seconds
0.001 0.01 0.1 1 10
Thermal Response - K/W
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FMM 150-0075P
Fig. 13 Reverse recovery time trr
of the body diode vs. di/dt
Fig. 14 Reverse recovery current IRM
of the body diode vs. di/dt
Fig. 15 Reverse recovery charge Qrr
of the body diode vs. di/dt
Fig. 16 Source current IS vs.
source drain voltage VSD (body diode)
Fig. 18 Therm. impedance junction to case ZthJC
V
GS
0,1 V
GS
0,9 V
GS
t
t
V
DS
I
D
0,1 I
D
0,9 I
D
0,1 I
D
t
d(on)
t
r
t
f
t
d(off)
0,9 I
D
Fig. 17 Definition of switching times
