LESHAN RADIO COMPANY, LTD.
BAS40-04LT1–1/2
Dual Series
Schottky Barrier Diode
BAS40-04LT1
1
3
2
CASE 318–08, STYLE 1 1
SOT–23 (TO–236AB)
* 40V SCHOTTKY BARRIER DIODES
3
CATHODE/ANODE
ANODE
1CATHODE
2
These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for
hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.50 Volts (Typ)
@ IF = 10 mAdc
MAXIMUM RA TINGS (TJ = 150°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR40 Volts
Forward Power Dissipation PF
@ TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Operating Junction and Storage TJ, Tstg –55 to +150 °C
Temperature Range
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 40 — Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT— 5.0 pF
Reverse Leakage (VR = 25 V) IR— 1.0 µAdc
Forward Voltage (IF = 0.1 mAdc) VF— 380 mVdc
Forward Voltage (IF = 30 mAdc) VF— 500 mVdc
Forward Voltage (IF = 100 mAdc) VF— 1.0 Vdc
LESHAN RADIO COMPANY, LTD.
BAS40-04LT1–2/2
BAS40–04LT1
100
10
1.0
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IF, FORWARD CURRENT (mA)
100
10
1.0
0.1
0.01
0.0010 5.0 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 2. Reverse Current Versus Reverse Voltage
IR, REVERSE CURRENT (µ A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
00 5.0 10 15 20 25 30 35 40
CT, CAPACITANCE (pF)
VF, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Current
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Current
