QS043-402-203912/5 3-M6 12.0 11.0 12.0 11.0 12.0 7(G2) 6(E2) 5 4 5 4 3-M5 25 9 16 23.0 23.0 17.0 24 9 16 14 9 9 14 14 4-fasten tab #110 t=0.5 LABEL 7 7 23 LABEL 30 +1.0 - 0 .5 30 +1.0 - 0.5 8 16 25 21.2 7.5 5(E1) 4(G1) 7 6 3 4 18.0 6 2 1 48.0 16.0 14.0 7 3 2 4 2-O6.5 1 15 6 48 0 .2 5 (C1) 3 94.0 80 0.25 4-O 6.5 6 (E2) 2 108 93 0 .2 5 14 11 14 11 14 62 11 13 20 (C2E1) 1 PDMB300E6 PDMB300E6C Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation , unction emperature ange torage emperature ange , ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal . PDMB3006 . PDMB300E6 . . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 600V, = 0V . = 20V,= 0V . ollector-mitter aturation oltage = 300A,= 15V . . ate-mitter hreshold oltage = 5V,= 300mA . . 15,000 . . . . . . . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime 300V 1.0 3.6 15V orward urrent = 10V,= 0V,= 1MH = = = = eak orward oltage everse ecovery ime . . . = 300A,= 0V . . = 300A,= -10V i/t= 600A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc 00 http://store.iiic.cc/ QS043-402-203913/5 Fig.2- Output Characteristics (Typical) Fig.1- Output Characteristics (Typical) T C=25C 600 VGE=20V VGE=20V 12V 15V 500 T C=125C 600 12V 15V 500 400 300 10V 200 11V Collector Current I C (A) Collector Current I C (A) 11V 9V 400 100 300 10V 200 9V 100 8V 8V 0 0 1 2 3 4 0 5 0 1 T C=25C Collector to Emitter Voltage V CE (V) 300A 10 8 6 4 2 4 8 12 16 IC=150A 14 300A 12 10 8 6 4 2 0 20 600A 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 400 16 RL =1.0( TC=25C 350 12 250 10 VCE =300V 200 8 200V 150 6 100V 100 4 2 50 0 200 VGE=0V f=1MHZ T C=25C 14 300 0 100000 400 600 800 1000 0 1200 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) 600A 12 0 5 T C=125C 16 30000 Cies Capacitance C (pF) Collector to Emitter Voltage V CE (V) 16 0 4 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=150A 3 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) 14 2 10000 Coes 3000 Cres 1000 300 100 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 http://store.iiic.cc/ QS043-402-203914/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 10 VCC=300V RG=4.7 ( VGE=15V T C=25C Resistive Load tOFF 0.6 tf 0.4 2 tON 0.2 0 100 200 300 400 0.2 tr(V CE) ton 0.1 0.02 500 tf 1 3 10 30 Fig.9- Collector Current vs. Switching Time Fig.10- Series Gate Impedance vs. Switching Time 10 VCC=300V RG=4.7 ( VGE=15V T C=125C Inductive Load tON tf tr(Ic) 0.01 100 VCC=300V IC=300A VGE=15V T C=125C Inductive Load 5 2 Switching Time t (s) Switching Time t (s) toff Series Gate Impedance RG (( ) tOFF 0.1 0.5 Collector Current IC (A) 10 1 1 0.05 tr(VCE) 0 VCC=300V IC=300A VGE=15V T C=25C Resistive Load 5 Switching Time t (s) Switching Time t (s) 0.8 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 1 0.5 toff 0.2 ton 0.1 tf 0.05 tr(IC ) 0.001 0 100 200 300 400 0.02 500 1 3 Collector Current IC (A) Fig.11- Collector Current vs. Switching Loss 100 1000 VCC=300V RG=4.7( VGE=15V T C=125C Inductive Load 30 EOFF EON 20 ERR 10 0 100 200 300 400 500 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 30 Fig.12- Series Gate Impedance vs. Switching Loss 40 0 10 Series Gate Impedance RG (( ) VCC=300V IC=300A VGE=15V T C=125C Inductive Load 300 EON 100 EOFF 30 10 ERR 3 1 1 Collector Current IC (A) 3 10 30 100 Series Gate Impedance RG (( ) 00 http://store.iiic.cc/ QS043-402-203915/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25C Fig.14- Reverse Recovery Characteristics (Typical) 1000 400 300 200 100 1 2 3 500 trr 200 100 50 IRrM 20 10 4 0 300 600 Forward Voltage VF (V) 900 1200 1500 1800 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 2000 RG=4.7( , VGE=15V, T C<125C 1000 500 200 Collector Current I C (A) 0 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 500 0 IF=300A T C=25C T C=125C T C=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 600 3x10 -1 FRD IGBT 1x10 -1 3x10 -2 1x10 -2 T C=25C 3x10 -3 1 Shot Pulse 1x10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00 http://store.iiic.cc/