'97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION FEATURE Type Access Power supply current time Active Stand-by (max) (max) (max) M5M5256DFP,VP,RV-10VLL 100ns M5M5256DFP,VP,RV-12VLL 120ns M5M5256DFP,VP,RV-15VLL 150ns M5M5256DFP,VP,RV-10VXL 100ns 12A (Vcc=3.6V) 20mA (Vcc=3.6V) 2.4A (Vcc=3.6V) M5M5256DFP,VP,RV-12VXL 120ns 0.05A M5M5256DFP,VP,RV-15VXL 150ns (Vcc=3.0V, Typical) *Single +2.7~3.6V power supply *No clocks, no refresh *Data-Hold on +2.0V power supply *Directly TTL compatible : all inputs and outputs *Three-state outputs : OR-tie capability */OE prevents data contention in the I/O bus *Common Data I/O *Battery backup capability *Low stand-by current**********0.05A(typ.) A14 A12 1 2 A7 3 A6 4 A5 5 A4 6 7 A3 A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /W A13 A8 A9 A11 /OE A10 /S DQ8 DQ7 DQ6 DQ5 DQ4 Outline 28P2W-C (DFP) 22 /OE 23 A11 24 A9 25 A8 26 A13 27 /W 28Vcc 1 A14 2 A12 3 A7 4 A6 5 A5 6 A4 7 A3 M5M5256DVP A10 21 /S 20 DQ8 19 DQ7 18 DQ6 17 DQ5 16 DQ415 GND 14 DQ3 13 DQ2 12 DQ1 11 A0 10 A1 9 A2 8 Outline 28P2C-A (DVP) PACKAGE M5M5256DFP : 28 pin 450 mil SOP M5M5256DVP,RV : 28pin 8 X 13.4 mm2 PIN CONFIGURATION (TOP VIEW) M5M5256DFP The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board. TSOP APPLICATION Small capacity memory units 7 A3 6 A4 5 A5 4 A6 3 A7 2 A12 1 A14 28 Vcc 27 /W 26 A13 25 A8 24 A9 23 A11 22 /OE M5M5256DRV A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 DQ4 15 DQ5 16 DQ6 17 DQ7 18 DQ8 19 /S 20 A10 21 Outline 28P2C-B (DRV) MITSUBISHI ELECTRIC 1 '97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM FUNCTION The operation mode of the M5M5256DP,FP,VP,RV is determined by a combination of the device control inputs /S, /W and /OE. Each mode is summarized in the function table. A write cycle is executed whenever the low level /W overlaps with the low level /S. The address must be set up before the write cycle and must be stable during the entire cycle. The data is latched into a cell on the trailing edge of /W, /S, whichever occurs first, requiring the set-up and hold time relative to these edge to be maintained. The output enable /OE directly controls the output stage. Setting the /OE at a high level,the output stage is in a high-impedance state, and the data bus contention problem in the write cycle is eliminated. A read cycle is executed by setting /W at a high level and /OE at a low level while /S are in an active state. When setting /S at a high level, the chip is in a non-selectable mode in which both reading and writing are disabled. In this mode, the output stage is in a high-impedance state, allowing OR-tie with other chips and memory expansion by /S. The power supply current is reduced as low as the stand-by current which is specified as Icc3 or Icc4, and the memory data can be held at +2V power supply, enabling battery back-up operation during power failure or power-down operation in the non-selected mode. FUNCTION TABLE /S /W /OE Mode DQ Icc H X X Non selection High-impedance Stand-by L L X Write DIN Active L H L Read DOUT Active L H H High-impedance Active 1 X 8BIT A 12 22 A7 3 A6 4 A5 5 A4 6 A3 7 8 A1 9 A0 10 A 10 21 A 11 23 A9 24 WRITE CONTROL INPUT /W 27 CHIP SELECT INPUT 20 /S OUTPUT ENABLE /OE INPUT COLUMN DECODER A2 (512 ROWS X 512 COLUMNS) CLOCK GENERATOR 22 OUTPUT BUFFER A 14 11 DQ1 12 DQ2 13 DQ3 15 DQ4 16 DQ5 17 DQ6 18 DQ7 19 DQ8 28 VCC (3V) 14 GND (0V) DATA I/O DATA INPUT BUFFER 32768 WORD ROW DECODER 26 ADDRESS INPUT BUFFER 25 A 13 ADDRESS INPUT BUFFER ADDRESS INPUT A8 SENSE ANPLIFIER BLOCK DIAGRAM MITSUBISHI ELECTRIC 2 '97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage Vcc VI VO Pd Topr Tstg Conditions Input voltage Output voltage Power dissipation Operating temperature Storage temperature Ratings -0.3*~4.6 -0.3*~Vcc+0.3 With respect to GND Unit V V V mW (Max 4.6) 0~Vcc 700 0~70 -65~150 Ta=25C C C * -3.0V in case of AC ( Pulse width 30ns ) DC ELECTRICAL CHARACTERISTICS Symbol Parameter (Ta=0~70C, Vcc=2.7~3.6V, unless otherwise noted) Limits Test conditions Min Typ Max Unit VIH High-level input voltage 2.0 Vcc +0.3 V VIL Low-level input voltage -0.3* 0.6 V VOH1 High-level output voltage 1 IOH=-0.5mA 2.4 V VOH2 High-level output voltage 2 IOH=-0.05mA Vcc -0.5 V VOL II Low-level output voltage IOL=1mA 0.4 V Input current VI=0~Vcc 1 uA IO Output current in off-state /S=VIH or or /OE=VIH, VI/O=0~Vcc 1 uA Icc1 Active supply current Min. /S0.2V, cycle Other inputs<0.2V or >Vcc-0.2V 1MHz Output-open Min. cycle Icc2 (AC, MOS level ) Active supply current (AC, TTL level ) /S=VIL, other inputs=VIH or VIL Output-open Min. cycle Icc3 Stand-by current /SVcc-0.2V, other inputs=0~Vcc Icc4 Stand-by current /S=VIH,other inputs=0~Vcc 11 20 mA 1.5 3 Min. cycle 11 20 1MHz 1.5 mA -VLL 3 12 -VXL 0.05 2.4 0.33 uA mA * -3.0V in case of AC ( Pulse width 30ns ) CAPACITANCE Symbol CI CO (Ta=0~70C, Vcc=2.7~3.6V, unless otherwise noted) Parameter Input capacitance Output capacitance Test conditions VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Min Limits Typ Max 6 8 Unit pF pF Note 0: Direction for current flowing into an IC is positive (no mark). 1: Typical value is one at Ta = 25C. 2: CI, CO are periodically sampled and are not 100% tested. MITSUBISHI ELECTRIC 3 '97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM AC ELECTRICAL CHARACTERISTICS (1) MEASUREMENT CONDITIONS (Ta = 0~70C, Vcc=2.7~3.6V, unless otherwise noted ) Input pulse level*******************VIH=2.2V,VIL=0.4V Input rise and fall time**********5ns Reference level********************VOH=VOL=1.5V Output loads*************************Fig.1,CL=30pF (-10VLL,-10VXL ) CL=50pF (-12VLL,-12VXL ) CL=100pF (-15VLL,-15VXL ) CL=5pF (for ten,tdis) Transition is measured 500mV from steady state voltage. (for ten,tdis) DQ (Including scope and JIG) CL Fig.1 Output load (2) READ CYCLE Symbol Parameter tCR ta(A) ta(S) ta(OE) tdis(S) tdis(OE) ten(S) ten(OE) tV(A) Read cycle time Address access time Chip select access time Output enable access time Output disable time after /S high Output disable time after /OE high Output enable time after /S low Output enable time after /OE low Data valid time after address Limits -10VLL, VXL -12VLL, VXL -15VLL, VXL Min Max Min Max Min Max 100 120 150 100 120 150 100 120 150 50 60 75 30 35 40 30 35 40 10 10 10 10 10 10 10 10 10 Unit ns ns ns ns ns ns ns ns ns (3) WRITE CYCLE Limits -10VLL, VXL -12VLL, VXL Min Max Min Max tCW Write cycle time 100 120 tw(W) Write pulse width 70 80 tsu(A) Address setup time 0 0 tsu(A-WH) Address setup time with respect to /W high 80 90 tsu(S) Chip select setup time 80 90 tsu(D) Data setup time 40 45 th(D) Data hold time 0 0 trec(W) Write recovery time 0 0 tdis(W) Output disable time from /W low 30 35 tdis(OE) Output disable time from /OE high 30 35 ten(W) Output enable time from /W high 10 10 ten(OE) Output enable time from /OE low 10 10 Symbol Parameter MITSUBISHI ELECTRIC -15VLL, VXL Unit Min Max ns 150 ns 90 ns 0 ns 100 ns 100 ns 50 ns 0 ns 0 ns 40 ns 40 ns 10 ns 10 4 '97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM (4) TIMING DIAGRAMS Read cycle tCR A0~14 ta(A) tv (A) ta (S) /S (Note 3) ta (OE) tdis (S) (Note 3) tdis (OE) (Note 3) ten (OE) /OE (Note 3) ten (S) DATA VALID DQ1~8 /W = "H" level Write cycle (/W control mode) tCW A0~14 tsu (S) /S (Note 3) (Note 3) tsu (A-WH) /OE tsu (A) tw (W) trec (W) /W tdis (W) tdis (OE) ten (W) ten(OE) DATA IN STABLE DQ1~8 (Note 3) (Note 3) tsu (D) MITSUBISHI ELECTRIC th (D) 5 '97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Write cycle ( /S control mode) tCW A0~14 tsu (A) tsu (S) trec (W) /S (Note 5) /W (Note 4) (Note 3) DQ1~8 tsu (D) th (D) (Note 3) DATA IN STABLE Note 3 : Hatching indicates the state is "don't care". 4 : Writing is executed in overlap of /S and /W low. 5 : If /W goes low simultaneously with or prior to /S, the outputs remain in the high impedance state. 6 : Don't apply inverted phase signal externally when DQ pin is output mode. 7 : ten, tdis are periodically sampled and are not 100% tested. MITSUBISHI ELECTRIC 6 '97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol (Ta = 0~70C, Vcc=2.7~3.6V, unless otherwise noted) Parameter Test conditions Vcc (PD) Power down supply voltage VI (/S) Chip select input /S Icc (PD) Power down supply current Vcc = 3V,/SVcc-0.2V, Other inputs=0~Vcc Min 2 2 Limits Typ Max Unit V V 10 -VLL (Note 7) -VXL 0.05 2 uA (Note 8) Note7: ICC (PD) = 1uA in case of Ta = 25C Note8: ICC (PD) = 0.2uA in case of Ta = 25C (2) TIMING REQUIREMENTS (Ta = 0~70C, Vcc=2.7~3.6V, unless otherwise noted ) Symbol tsu (PD) trec (PD) Parameter Test conditions Power down set up time Power down recovery time Min Limits Typ Max Unit ns ns 0 tCR (3) POWER DOWN CHARACTERISTICS /S control mode Vcc tsu (PD) 2.7V 2.7V 2.0V 2.0V /S trec (PD) /SVcc-0.2V MITSUBISHI ELECTRIC 7