IXFX55N50 - LITTELFUSE

miniBLOC, SOT-227 B (IXFN)

E153432

TO-264 AA (IXFK)

Features

•International standard packages

•Encapsulating epoxy meets

UL 94 V-0, flammability classification

•miniBLOC with Aluminium nitride

isolation

•Low RDS (on) HDMOSTM process

•Rugged polysilicon gate cell structure

•Unclamped Inductive Switching (UIS)

rated

•Low package inductance

•Fast intrinsic Rectifier

Advantages

•PLUS247 package for clip or spring

bar mounting

•Easy to mount

•Space savings

•High power density

G = Gate D = Drain

S = Source TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

DD (TAB)

DS97502G(11/04)

HiPerFETTM

Power MOSFET

Single Die MOSFET

IXFK 55N50

IXFX 55N50

IXFN 55N50

VDSS = 500 V

ID25 =55A

RDS(on) = 90m

ΩΩ

Ω

trr ≤≤

≤≤

≤250 ns

PLUS247(IXFX)

GCE

(TAB)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

VDSS VGS = 0 V, ID = 1 mA 500 V

VGS(th) VDS = VGS, ID = 8 mA 2.5 4.5 V

IGSS VGS = ±20 VDC, VDS = 0 ±200 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 125°C2mA

RDS(on) VGS = 10 V, ID = 0.5 ID25 90 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C 500 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C55A

IDM TC= 25°C, pulse width limited by TJM 220 A

IAR TC= 25°C55A

EAR TC= 25°C60mJ

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 10 V/ns

TJ≤ 150°C, RG = 4 Ω

PDTC= 25°C 625 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX) 300 °C

MdMounting torque (IXFK, IXFX) 1.13/10 Nm/lb.in.

Terminal leads (IXFN) 1.13/10 Nm/lb.in.

VISOL 50/60 Hz, RMS (IXFN) t = 1minute 2500 V~

IISOL ≤≤

≤≤

≤ 1 mA t = 1 s 3000 V~

Weight PLUS247 5 g

TO-264 10 g

SOT-227B 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 45 S

Ciss 9400 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 pF

Crss 460 pF

td(on) 45 ns

trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns

td(off) RG= 1 Ω (External), 120 ns

tf45 ns

Qg(on) 330 nC

Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC

Qgd 155 nC

RthJC 0.20 K/W

RthCK IXFK, IXFX 0.15 K/W

RthCK 0.05 K/W

Source-Drain Diode

(TJ = 25°C, unless otherwise specified) Characteristic Values

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0 55 A

ISM Repetitive; 220 A

pulse width limited by TJM

VSD IF = 100 A, VGS = 0 V Note 1 1.5 V

trr 250 ns

QRM IF = 25 A, -di/dt = 100 A/µs, VR = 100 V 1.0 µC

IRM 10 A

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255

B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169

D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169

F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193

H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481

K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033

M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001

O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235

Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174

S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987

U -0.05 0.1 -0.002 0.004

miniBLOC (SOT-227B) Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXFK55N50 IXFX55N50

IXFN55N50

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463

Terminals:

1 - Gate 2 - Collector

PLUS247 Outline

TC - Degrees C

-50 -25 0 25 50 75 100 125 150

ID - Amperes

TJ - Degrees C

25 50 75 100 125 15

RDS(ON) - Normalized

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- Volts

3.0 3.5 4.0 4.5 5.0 5.5 6.0

ID - Amperes

100

TC - Degrees C

-50 -25 0 25 50 75 100 125 150

ID - Amperes

0 20 40 60 80 100 120

RDS(ON) - Normalized

0.8

1.2

1.6

2.0

2.4

2.8

VDS - Volts

0 4 8 12 16 20 24

ID - Amperes

100

VDS - Volts

0 4 8 12162024

ID - Amperes

100

120

140

VGS = 10V

TJ = 125OC

VGS = 10V

TJ = 25OC

TJ = 25oC

ID = 55A

TJ = 125OC

TJ = 125oC

VGS = 10V

ID = 27.5A

ID - Amperes

0 20 40 60 80 100 120

RDS(ON) - Normalized

0.8

1.2

1.6

2.0

2.4

2.8

VGS = 10V VGS = 10V

TJ = 25OC

TJ = 25oC

TJ = 125OC

IXF_55N50

IXF_50N50

TJ = 25OC

Figure 1. Output Characteristics at 25OCFigure 2. Output Characteristics at 125OC

Figure 3. RDS(on) normalized to 0.5

ID25 value vs. ID

Figure 4. RDS(on) normalized to 0.5

ID25 value vs. TJ

Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

IXFK55N50 IXFX55N50

IXFN55N50

Figure 7. Gate Charge Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the

Intrinsic Diode

Figure 10. Transient Thermal Resistance

Gate Charge - nC

0 50 100 150 200 250 300 350

VGS - Volts

VDS = 250V

ID = 27.5A

VDS - Volts

0 5 10 15 20 25 30 35 40

Capacitance - pF

100

1000

10000

Crss

Coss

Ciss f = 1MHz

VSD - Volts

0.2 0.4 0.6 0.8 1.0

ID - Amperes

100

TJ = 125OC

TJ = 25OC

IXFK55N50 IXFX55N50

IXFN55N50

Pulse Width - Seconds

10-4 10-3 10-2 10-1 100101

R(th)JC - K/W

0.00

0.01

0.10

1.00

IXFK55N50/IXFX55N50

IXFN55N50

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.