1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated
Schottky barrier diodes which use a patented “guard ring”
design to achieve a high breakdown voltage. Packaged in
a low cost glass package, they are well suited for high level
detecting, mixing, switching, gating, log or A-D converting,
video detecting, frequency discriminating, sampling, and
wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost
glass package. It is optimized for low turn-on voltage. The
5082-2835 is particularly well suited for the UHF mixing
needs of the CATV marketplace.
Outline 15 Maximum Ratings
Junction Operating and Storage Temperature Range
1N5711, 1N5712, 5082-2800/10/11 ..... -65°C to +200°C
5082-2835 ..................................................... -60°C to +150°C
DC Power Dissipation
(Measured in an innite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temp.
1N5711, 1N5712, 5082-2800/10/11 .....................250 mW
5082-2835 .....................................................................150 mW
Peak Inverse Voltage ................................................................ VBR
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
0.41 (.016)�
0.36 (.014)
25.4 (1.00)�
MIN.
25.4 (1.00)�
MIN.
1.93 (.076)�
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)�
3.81 (.150)
2
Package Characteristics Outline 15
Lead Material ..............................................................................................................Dumet
Lead Finish ..................................................................................................95-5% Tin-Lead
Max. Soldering Temperature ................................................................. 260°C for 5 sec
Min. Lead Strength .....................................................................................4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ....................................................................................................2.0 nH
2800 Series: ..............................................................................................................2.0 nH
Typical Package Capacitance
1N5711, 1N5712: .....................................................................................................0.2 pF
2800 Series: ...............................................................................................................0.2 pF
Electrical Specications at TA = 25°C
General Purpose Diodes
Part
Number
Package
Outline
Min.
Breakdown
Voltage
VBR (V)
Max.
Forward
Voltage
VF (mV)
VF = 1 V Max.
at Forward
Current
IF (mA)
Max.
Reverse Leakage
Current
IR (nA) at VR (V)
Max.
Capacitance
CT (pF)
5082-2800 15 70 410 15 200 50 2.0
1N5711 15 70 410 15 200 50 2.0
5082-2810 15 20 410 35 100 15 1.2
1N5712 15 20 550 35 150 16 1.2
5082-2811 15 15 410 20 100 8 1.2
5082-2835 15 8* 340 10* 100 1 1.0
Test
Conditions
IR = 10 µA
*IR = 100 µA
IF = 1 mA *V
F = 0.45 V VR = 0 V
f =1.0 MHz
Note: Eective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835 which is
measured at 20 mA.
The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel specication is patterned after RS-296-D.
3
SPICE Parameters
Parameter Units 5082-2800 5082-2810 5082-2811 5082-2835
BVV 75 25 18 9
CJ0 pF 1.6 0.8 1.0 0.7
EGeV 0.69 0.69 0.69 0.69
IBV A 10E - 5 10E-5 10E-5 10E-5
ISA 2.2 x 10E-9 1.1 x 10E-9 0.3 x 10E-8 2.2 x 10E-8
N 1.08 1.08 1.08 1.08
RSΩ 25 10 10 5
PBV 0.6 0.6 0.6 0.56
PT2 2 2 2
M 0.5 0.5 0.5 0.5
Matched Pairs and Quads
Basic
Part Number
5082-
Matched
Pair
Unconnected
Matched
Quad
Unconnected
Batch
Matched[1]
Test Conditions
2800 5082-2804
∆VF = 20 mV
5082-2805
∆VF = 20 mV
∆V
F at IF = 0.5, 5 mA
*IF = 10 mA
∆CO at f = 1.0 MHz
2811 5082-2826
∆VF = 10 mV
∆CO = 0.1 pF
∆V
F at IF = 10 mA
∆CO at f = 1.0 MHz
2835 5082-2080
∆VF = 10 mV
∆CO = 0.1 pF
∆V
F at IF =10 mA
∆CO at f = 1.0 MHz
Note:
1. Batch matched devices have a minimum batch size of 50 devices.
4
Typical Parameters
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
VF - FORWARD VOLTAGE (V)
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2800 or
1N5711 Schottky Diodes.
50
10
5
1
0.5
0.1
0.05
0.01
IF - FORWARD CURRENT (mA)
0 0.2 0.4 0.6 0.8 1.0 1.2
–50 C
0 C
+25 C
+100 C
+150 C
+50 C
Figure 2. (5082-2800 OR 1N5711) Typical
Variation of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
VR - REVERSE VOLTAGE (V)
Figure 3. (5082-2800 or 1N5711) Typical
Capacitance (CT) vs. Reverse Voltage (VR).
12.0
1.5
1.0
0.5
0
CT - CAPACITANCE (pF)
0 10 20 30 40 50
VF - FORWARD VOLTAGE (V)
Figure 4. I-V Curve Showing Typical Temperature
Variation for the 5082-2810 or 1N5712 Schottky
Diode.
100
10
1.0
0.1
0.01
IF - FORWARD CURRENT (mA)
0 0.40.2 0.6 0.8 1.0 1.2
–50 C
0 C
+25 C
+50 C
+100 C
+150 C
VR - REVERSE VOLTAGE (V)
Figure 5. (5082-2810 or 1N5712) Typical
Variation of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
10,000
1000
100
10
1.0
IR - REVERSE CURRENT (nA)
0 105 15 20 25 30
150
125
100
75
50
25
TA = C
VR - REVERSE VOLTAGE (V)
100,000
10,000
1000
100
10
1
IR - REVERSE CURRENT (nA)
0 20 40 60 80 100 120
150
125
100
50
25
75
0
TA = °C
5
Typical Parameters, continued
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
VF - FORWARD VOLTAGE (V)
Figure 6. I-V Curve Showing Typical Temperature
Variation for the 5082-2811 Schottky Diode.
100
10
1.0
0.1
0.01
IF - FORWARD CURRENT (mA)
0 0.40.2 0.6 0.8 1.0 1.2
–50 C
0 C
+25 C
+50 C
+100 C
+150 C
VR - REVERSE VOLTAGE (V)
Figure 7. (5082-2811) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
100,000
10,000
1000
100
10
1
IR - REVERSE CURRENT (nA)
0 5 10 15 20 25 30
150
100
50
25
TA = C
VF - FORWARD VOLTAGE (V)
Figure 8. I-V Curve Showing Typical Temperature
Variations for 5082-2835 Schottky Diode.
100
10
1.0
0.1
0.01
IF - FORWARD CURRENT (mA)
0 0.2 0.4 0.6 0.8 1.0 1.2
+150 C
+100 C
+50 C
+25 C
0 C
–50 C
VR - REVERSE VOLTAGE (V)
Figure 9. (5082-2835) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
100,000
10,000
1000
100
10
1
IR - REVERSE CURRENT (nA)
0 1 2 3 4 5 6
+150 C
+125 C
+100 C
+75 C
+50 C
+25 C
VR - REVERSE VOLTAGE (V)
Figure 10. Typical Capacitance (CT) vs. Reverse
Voltage (VR).
11.4
1.2
1.0
0.8
0.6
0.4
0.2
0
CT - CAPACITANCE (pF)
0 2 4 6 8 10
5082-2810/2811
1N5712
5082-2835
IF - FORWARD CURRENT (mA)
Figure 11. Typical Dynamic Resistance (RD) vs.
Forward Current (IF).
1000
100
10
1
RD - DYNAMIC RESISTANCE ( )
0 2 4 6 8 10
5082-2800, 1N5711
5082-2811
5082-2811
1N5712
5082-2835
6
RFD Reel Dimensions for T25/T50
Figure 13.
Tape Dimensions and Product Orientation
200 mil
24mm
24mm
6 mm
6 mm
4.3mm
64.3 mm
200 mil
24mm
24mm
6 mm
6 mm
4.3mm
64.3 mm
70mm
300mm
75mm
17mm
Side view
Front view
Figure 14.
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Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-3680EN
AV02-0429EN - June 6, 2007
Diode Package Marking
1N5xxx 5082-xxxx
would be marked:
1Nx xx
xxx xx
YWW YWW
where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part number.
Y is the last digit of the calendar year. WW is the work week of manufacture.
Examples of diodes manufactured during workweek 45 of 1999:
1N5712 5082-3080
would be marked:
1N5 30
712 80
945 945
Part Number Ordering Information
Part Number No. of devices Container
5082-28xx#T25/1N57xx#T25 2500 Tape & Reel
5082-28xx#T50/ 1N57xx#T50 5000 Tape & Reel
5082-28xx/ 1N57xx 100 Antistatic bag