STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESHMOSFET
■TYPICAL RDS(on) =3.3 Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■100% AVALANCHE TESTED
■VERYLOW INTRINSICCAPACITANCES
■GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■HIGH CURRENT, HIGH SPEEDSWITCHING
■SWITCH MODE POWER SUPPLIES(SMPS)
■DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
March 1998
TO-220 TO-220FP
123
123
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP3NB60 STP3NB60FP
VDS Drain-source Voltage (VGS =0) 600 V
V
DGR Drain- gate Voltage (RGS =20kΩ)600 V
VGS Gate-source Voltage ±30 V
IDDrain Current (continuous) at Tc=25o
C3.32.2A
I
D
Drain Current (continuous) at Tc=100o
C2.11.4A
I
DM(•) Drain Current (pulsed) 13.2 13.2 A
Ptot Total Dissipation at Tc=25o
C8035W
Derating Factor 0.64 0.28 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC) 2000 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
TYPE VDSS RDS(on) ID
STP3NB60
STP3NB60FP 600 V
600 V <3.6 Ω
<3.6Ω3.3 A
2.2 A
1/9
THERMAL DATA
TO-220 TO220-FP
Rthj-case Thermal Resistance Junction-case Max 1.56 3.57 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 3.3 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =50V) 100 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS =0 600 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRating T
c=125o
C1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 30 V ±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage VDS =V
GS ID=250µA345V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D= 1.6 A 3.3 3.6 Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10V 3.3 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=1.6A 1.2 2 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 400
57
7
520
77
9
pF
pF
pF
STP3NB60/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD =300V I
D=1.6A
R
G=4.7 Ω VGS =10V
(see test circuit, figure 3)
11
717
11 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =480V I
D=3.3A V
GS =10V 15
6.2
5.6
22 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =480V I
D=3.3A
R
G=4.7 Ω VGS =10V
(see test circuit, figure 5)
11
13
18
16
18
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
3.3
13.2 A
A
VSD (∗) Forward On Voltage ISD =3.3A V
GS =0 1.6 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 3.3 A di/dt = 100 A/µs
VDD =100V T
j=150o
C
(see test circuit, figure 5)
500
2.1
8.5
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areafor TO-220 Safe OperatingArea for TO-220FP
STP3NB60/FP
3/9
Thermal Impedancefor TO-220
OutputCharacteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP3NB60/FP
4/9
GateCharge vs Gate-sourceVoltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drainDiode Forward Characteristics
CapacitanceVariations
Normalized On Resistance vs Temperature
STP3NB60/FP
5/9
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 3: Switching Times Test Circuits For
ResistiveLoad
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: TestCircuit For InductiveLoad Switching
And Diode RecoveryTimes
STP3NB60/FP
6/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP3NB60/FP
7/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP3NB60/FP
8/9
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which may resultsfrom itsuse. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorizedfor use as criticalcomponents in life support devices orsystems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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STP3NB60/FP
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