Order this document by MJ11028/D SEMICONDUCTOR TECHNICAL DATA $!!# #!% !""#!" . . . for use as output devices in complementary general purpose amplifier applications. * High DC Current Gain -- hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc * Curves to 100 A (Pulsed) * Diode Protection to Rated IC * Monolithic Construction with Built-In Base-Emitter Shunt Resistor * Junction Temperature to + 200_C IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII *Motorola Preferred Device MAXIMUM RATINGS Symbol MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 Unit VCEO 60 90 120 Vdc Collector-Base Voltage VCB 60 90 120 Vdc Emitter-Base Voltage VEB 5 Vdc Collector Current -- Continuous Peak IC ICM 50 100 Adc Base Current -- Continuous IB 2 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C @ TC = 100_C PD 300 1.71 Watts W/_C TJ, Tstg - 55 to + 200 _C Rating Collector-Emitter Voltage Operating and Storage Junction Temperature Range 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60 - 120 VOLTS 300 WATTS THERMAL CHARACTERISTICS Characteristic Symbol Max Unit TL 275 _C RJC 0.584 _C COLLECTOR NPN MJ11028 MJ11030 MJ11032 Maximum Lead Temperature for Soldering Purposes for 10 seconds Thermal Resistance Junction to Case PNP MJ11029 MJ11031 MJ11033 BASE CASE 197A-05 TO-204AE (TO-3) COLLECTOR BASE 3.0 k 25 3.0 k EMITTER 25 EMITTER Figure 1. Darlington Circuit Schematic Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 60 90 120 -- -- -- Vdc -- -- -- -- -- -- 2 2 2 10 10 10 -- 5 mAdc -- 2 mAdc 1k 400 18 k -- -- -- 2.5 3.5 -- -- 3.0 4.5 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = 1 00 mAdc, IB = 0) MJ11028, MJ11029 MJ11030, MJ11031 MJ11032, MJ11033 Collector-Emitter Leakage Current (VCE = 60 Vdc, RBE = 1 k ohm) (VCE = 90 Vdc, RBE = 1 k ohm) (VCE = 120 Vdc, RBE = 1 k ohm) (VCE = 60 Vdc, RBE = 1 k ohm, TC = 150_C) (VCE = 90 Vdc, RBE = 1 k ohm, TC = 150_C) (VCE = 120 Vdc, RBE = 1 k ohm, TC = 150_C) MJ11028, MJ11029 MJ11030, MJ11031 MJ11032, MJ11033 MJ11028, MJ11029 MJ11030, MJ11031 MJ11032, MJ11033 ICER Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO ICEO Collector-Emitter Leakage Current (VCE = 50 Vdc, IB = 0) mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 25 Adc, VCE = 5 Vdc) (IC = 50 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 25 Adc, IB = 250 mAdc) (IC = 50 Adc, IB = 500 mAdc) hFE VCE(sat) Base-Emitter Saturation Voltage (IC = 25 Adc, IB = 200 mAdc) (IC = 50 Adc, IB = 300 mAdc) Vdc VBE(sat) 300 s, Duty Cycle (1) Pulse Test: Pulse Width -- Vdc 2.0%. IC, COLLECTOR CURRENT (AMP) 100 There are two limitations on the power-handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 50 20 10 5 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 2 1 MJ11028, 29 MJ11030, 31 MJ11032, 33 0.5 0.2 0.1 0.2 0.5 1 2 5 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Safe Operating Area 100 k VCE = 5 V TJ = 25C hFE, DC CURRENT GAIN 50 k 20 k 10 k 5k 2k MJ11029, MJ11031, MJ11033 PNP MJ11028, MJ11030, MJ11032 NPN 1k 500 80 s (PULSED) 200 100 2 1 2 5 10 20 50 100 5 MJ11029, MJ11031, MJ11033 PNP MJ11028, MJ11030, MJ11032 NPN 4 3 TJ = 25C IC/IB = 100 VBE(sat) 2 1 0 1 VCE(sat) 2 3 80 s (PULSED) 5 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain Figure 4. "On" Voltage 50 Motorola Bipolar Power Transistor Device Data 100 PACKAGE DIMENSIONS A N C -T- E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M -Y- L 2 H G B M T Y 1 -Q- 0.25 (0.010) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE (TO-3) ISSUE J Motorola Bipolar Power Transistor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *MJ11028/D* MJ11028/D