International pp.9.819 zor] Rectifier IRGMIC50U INSULATED GATE BIPOLAR TRANSISTOR Ultra Fast-Speed IGBT WITH ON-BOARD REVERSE DIODE * Electrically Isolated Cc Hermetically Sealed Voces = 600V Simple Drive Requirements = * Latch-proof fae 20kHz UltraFast operation > 10 kHz G Io @ fez = 18A Switching-loss rating includes all tail losses E Veen) 3.0V Ceramic Eyelets n-channel @Vee = 15V, Io = 27A Description Insulated Gate Bipolar Transistors (IGBTs) from international Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of higher-voltage, higher-current aplications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fi,y2, or the half-current frequency), as well as an indication of the current handling capability of the device. TO-259AA* *For mechanical dimensions see page G-114 Absolute Maximum Ratings Parameter Max. Units V(BR)CES Collector-to-Emitter Breakdown Voltage 600 v Ic @ Tc = 25C Continuous Collector Current 45 Ico @ Tc = 100C Continuous Collector Current 27 A lom Pulsed Collector Current 220 VGE Gate-to-Emitter Voltage +20 v ILM Clamped Inductive Load Current @ 180 A Pp @ Tc = 25C Maximum Power Dissipation 200 Ww Pp @ Tc = 100C | Maximum Power Dissipation 80 Ww Ty Operating Junction and ~56 to 150 TSTG Storage Temperature Range 6 Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Weight 10.5 g Ic current limited by pin diameter Thermal Resistance Parameter Min. Typ. Max. Units ReJc Junction-to-Case-IGBT _ _- 0.625 Reuc Junction-to-Case-Diode _ - 1.0 oC Recs Case-to-Sink, flat, greased surface _ 0.21 _ ReJA Junction-to-Ambient, typical socket mount _ - 30 G-107IRGMIC50U Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. |Max.| Units Test Conditions V(BR)CES Collector-to-Emitter Breakdown 600} | | V |VGE = OVic = 1.0mA Voltage AV(BR)CES/ATy | Temperature Coefficient of (060) | VPC iVGE = OV, Ic = 1.0 mA Breakdown Voltage VCE(on) Collector-to-Emitter Saturation ; | 30 VGE = 15V, Io = 27A Voltage T 1325] v |VGe = 18V ig = 45A | - /285 VGE = 15V, Io = 27A, Ty = 125C VGE(th) Gate Threshold Voltage 30/|55] V |VcE = VaE, Io = 250pA AVGE(thy/ATy _[Temp. Coeff. of Threshold Voltage | | -13 | mVPCIVCE = VGE, Io = 250pA Ofe Forward Transconductance 16)}| | S |VcE = 100V, Ico = 27A, Vpg = 15V| IcES Zero Gate Voltage Collector Current) | | 250 yA VGE = OV, VcE = 480V, Ty = 25C | [5000 VGE = OV, VcE = 480V, Ty = 125C VeEM Diode Forward Voltage Drop }| 117] y ile = 27A, Ty = 25C | 415 Io = 27A, Ty = 125C Switching C haracteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. |Max.| Units Test Conditions QG Total Gate Charge (turn-on) | | 140 Io = 27A, Voc = 300V QGE Gate-Emitter Charge (turn-on) | | 35 | nC |See Fig. 8 Qac Gate-Collector Charge (turn-on) |- | 70 VGe = 15V ta(on) Turn-On Delay Time | | 50 Ico = 27A, Vcc = 480V tr Rise Time |{ | 75] as [Tu = 25C taoff) Turn-Off Delay Time | [300 VGeE = 15V, Ra = 2.352 tt Fall Time | }210 Energy losses include tail Eon Turn-On Switching Loss 1012) See Fig. 10 and 15a Eott Turn-Off Switching Loss |16]] mJ Ets Total Switching Loss 117/128 td(on) Turn-On Delay Time |24)] Io = 27A, Voc = 480V tr Rise Time | 27 | 1] ng [N= 125C tavoffy Turn-Off Delay Time | 180) VGE = 15V, Rg = 2.350 tt Fall Time | 130} See Fig. 10 and 15a Ets Total Switching Loss |27| | mi Le internal Emitter Inductance | 13 | | nH [Measured 5mm from package Cies {nput Capacitance |2900; VGE = 0V Coes Output Capacitance 1330! | pF |Voc = 30V Cres Reverse Transfer Capacitance --1H4] f = 1.0MHz ter Diode Peak Reverse Recovery | | 100] ns |di/dt < 200A/ys, IF = 27A Time Ty = 25C, VR = 200V Qr Diode Peak Reverse Recovery | | 375! nC Idi/dt < 200A/us, IF = 27A Charge Ty = 25C, VR s 200V Notes: @ Repetitive rating; Vae = 20V, pulse width Voc = 80% (VcEs), VGE = 20V, L = 10uH, limited by max. junction temperature. (See Fig. 13b). Re = 100. (See Fig. 13a). Pulse width <5zs, single shot. G-108IRGMIC50U Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. |Max.| Units Test Conditions V(BR)CES Collector-to-Emitter Breakdown 600} | | V |VGE = OVic = 1.0mA Voltage AV(BR)CES/ATy | Temperature Coefficient of (060) | VPC iVGE = OV, Ic = 1.0 mA Breakdown Voltage VCE(on) Collector-to-Emitter Saturation ; | 30 VGE = 15V, Io = 27A Voltage T 1325] v |VGe = 18V ig = 45A | - /285 VGE = 15V, Io = 27A, Ty = 125C VGE(th) Gate Threshold Voltage 30/|55] V |VcE = VaE, Io = 250pA AVGE(thy/ATy _[Temp. Coeff. of Threshold Voltage | | -13 | mVPCIVCE = VGE, Io = 250pA Ofe Forward Transconductance 16)}| | S |VcE = 100V, Ico = 27A, Vpg = 15V| IcES Zero Gate Voltage Collector Current) | | 250 yA VGE = OV, VcE = 480V, Ty = 25C | [5000 VGE = OV, VcE = 480V, Ty = 125C VeEM Diode Forward Voltage Drop }| 117] y ile = 27A, Ty = 25C | 415 Io = 27A, Ty = 125C Switching C haracteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. |Max.| Units Test Conditions QG Total Gate Charge (turn-on) | | 140 Io = 27A, Voc = 300V QGE Gate-Emitter Charge (turn-on) | | 35 | nC |See Fig. 8 Qac Gate-Collector Charge (turn-on) |- | 70 VGe = 15V ta(on) Turn-On Delay Time | | 50 Ico = 27A, Vcc = 480V tr Rise Time |{ | 75] as [Tu = 25C taoff) Turn-Off Delay Time | [300 VGeE = 15V, Ra = 2.352 tt Fall Time | }210 Energy losses include tail Eon Turn-On Switching Loss 1012) See Fig. 10 and 15a Eott Turn-Off Switching Loss |16]] mJ Ets Total Switching Loss 117/128 td(on) Turn-On Delay Time |24)] Io = 27A, Voc = 480V tr Rise Time | 27 | 1] ng [N= 125C tavoffy Turn-Off Delay Time | 180) VGE = 15V, Rg = 2.350 tt Fall Time | 130} See Fig. 10 and 15a Ets Total Switching Loss |27| | mi Le internal Emitter Inductance | 13 | | nH [Measured 5mm from package Cies {nput Capacitance |2900; VGE = 0V Coes Output Capacitance 1330! | pF |Voc = 30V Cres Reverse Transfer Capacitance --1H4] f = 1.0MHz ter Diode Peak Reverse Recovery | | 100] ns |di/dt < 200A/ys, IF = 27A Time Ty = 25C, VR = 200V Qr Diode Peak Reverse Recovery | | 375! nC Idi/dt < 200A/us, IF = 27A Charge Ty = 25C, VR s 200V Notes: @ Repetitive rating; Vae = 20V, pulse width Voc = 80% (VcEs), VGE = 20V, L = 10uH, limited by max. junction temperature. (See Fig. 13b). Re = 100. (See Fig. 13a). Pulse width <5zs, single shot. G-108IRGMIC50U Power dissipation = 47W 38 Load Current (A) of 1 10 100 f, Frequency (kHz) Fig. 1. Typical Load Current vs. Frequency (For square wave, l=layg of fundamental; for triangular wave, l=ipx) Te = 150C 104 100 hs 3 Oo Vee & 15V 20us PULSE WIDTH to! Voc = 100V Sus PULSE WIDTH Te, COLLECTOR-to-EMITTER CURRENT (A) 1974 Ic, CGLLECTOR-TO-EMITTER CURRENT (AMPERES) 407 109 10 20 Vee. COLLECTOR-to-EMITTER VOLTAGE [V) Voge. GATE-TO-EMITTER VOLTAGE (VOLTS) Fig. 2. Typical Output Characteristics Fig. 3. Typical Transfer Characteristics Ty = 25C Ty = 25C Ty = 150C Ty = 150C G-109IRGMIC50U Ip: DRAIN CURRENT (AMPERES) 3.0 Vee = 15V 80us PULSE WIDTH LIMITED BY PACKAGE n At) o ao Veg, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 25 50 75 400 125 150 *s To, CASE TEMPERATURE ( C) Tc, CASE TEMPERATURE (C) Fig. 4 Maximum Collector Current vs. Fig. 5. Collector-to-Emitter Saturation Case Temperature Voltage vs. Case Temperature Tu So.1 X w 7) Zz Oo oO g SINGLE PULSE ed (THERMAL RESPONSE) z 10 T z Pow Ww Lt & ert el NOTES: 1. DUTY FACTOR, O=t1/t2 2. PEAK 153=Ppm X Ztnjc + Te 10 405 104 103 102 0.4 1 10 t4, RECTANGULAR PULSE DURATION (SECONDS) Fig. 6. Maximum Effective Transient Thermal Impedance, Junction-to-Case G-110C, CAPACITANCE (pf) Cres 194 Voge, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Fig. 7. Typical Capacitance vs. Collector-to-Emitter Voltage we no nm SWITCHING ENERGY LOSSES (mu) 60 10 20 30 40 50 Rg, GATE RESISTANCE (OHMS) Fig. 9. Typical Switching Losses vs. Gate Resistance IRGMIC50U Pice=aov Ig = 27A fey i a oo n GATE~TO-EMITTER VOLTAGE (VOLTS) aR Voer 0 20 40 60 100 4120 Gg, TOTAL GATE CHARGE {nC) Fig. 8. Typical Gate Charge vs. Gate-to-Emitter Voltage oS ra SWITCHING ENERGY LOSSES (mu) 60 -40 -20 0 20 40 60 & 100 120 140 160 Tc, CASE TEMPERATURE (C) Fig. 10. Typical Switching Losses vs. Case Temperature G-111IRGMIC50U 7.0 Vec = 480V a a a SWITCHING ENERGY LOSSES (mJ) w ~ 1 20 30 40 50 60 Ip, COLLECTOR-TO-EMITTER CURRENT (AMPERES) Fig. 11. Typical Switching Losses vs. Collector-to-Emitter Current 50V = L a - 480 pF Lo 4x/,@ 25C L 0-960V 960V = + mm = 6000uF T TT oO 10 D.U.T. * Driver same as D.U.T.; Ve = 80% of Vee(max) * Note: Dus to the 50V power supply, pulse width and inductor will increase to obtain rated id. Fig. 12a. Clamped inductive Fig. 12b. Pulsed Collector Current Load Test Circuit Test Circuit G-112~ IRGMICS5OU Fig 13a. Switching Loss Test Circuit 50V = ltt * Driver same type as D.U.T., Ve = 480V 1 90% Fig 13b. Switching Loss 5 10% Waveforms i) E1s=(Eont+Eoit) G-113IRGMIC50U 30.35 (1.195) 30,09 (1.185) | (aro) 3.30 (0.130) ZT] 0:43 (0.005) ] (I eos) _, | 2x 5540-120) Pe 17:9 (0685) [6.050 (0.020 @ fala @) OO. 6.85 (0.270) [| 6.09 (0.240) yr 5a? (0255 5 , 4} os 4 ez) 1 -o 7.23 (0.285) 13.97 (0.550) 1 ce I2 R / 73.46 (0550) Gare COLLECTOR | \ J {te 33.02 (1,300) o e 26.16 (1.030) | 1 [12 f]3 19.05 (0.750) ' bane) 12.70 (0.500) 2 EMITTER _.| \ ax g 1: 85.(0-065) 1 Canaan) Ee ee (2550-140) 1-| [- x [fe 0.50 (0.020) MD [c]A @) fe faazs moro) ai tion NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M - 1982. 2. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Fig. 14 Conforms to JEDEC Outline TO-259AA 47.65 (0.695) F735 0-683} i BF 0,5 C0 OBAG) +14 (048 "0.88 (0.035) BT f 30.95 (1.195) OO (T. = [23.87(0. 940) |} 3.30 (0.130 = XO SST TIO | 6.85 (0,270 L hy EO (0.240) 17 0. 125 be | IOR L ero. AOSD +) 1 2 3 5220-26) BERYLLIA WARNING PER MIL-S-19500 Packages containing berylita shalt not be will produce besyliia or beryllium dust. beryllium oxide packages shall 3.68 (0,145) ground, sandblasted, machined, or have ; ) other eperations performed an tham which j =C- 3.17 (0. 125) J 1.65 (0.065) 3.68 (0.145 __ theo 9 88 {hogs oe 735) 2-06 (0.209 (Be 0-50 0.050) WIClA Gla] [els 0.25 (0.070) @pIc] 14.22 (0.560 NOTES: Tae . 1 DIMENSIONING & TOLERANCING PER ANSI Y14,5M - 1982, 2 CONTROLLING DIMENSION: INCH. 3 ALL DIMENSIONS ARE SHOWN iN MILLIMETERS (INCHES). LEGEND 4 LEADFORM (S AVAILABLE IN EITHER ORIENTATION: 1 COLLECTOR [4.1] EXAMPLE: iRGMICSOUD 2 EMITTER [2:2] EXAMPLE: IRGMICSOUU 3 GATE not be placed in acids that willl produce fumes containing berytlium. Fig. 15 Optional Leadforms for Outline TO-259 G-114