BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) SYMBOL BD645 80 BD647 100 BD649 V CBO 140 BD645 60 BD649 VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 80 100 V V 120 BD651 Emitter-base voltage UNIT 120 BD651 BD647 Collector-emitter voltage (IB = 0) VALUE VEBO 5 IC 8 V A ICM 12 A IB 0.3 A Ptot 62.5 W Ptot 2 W 1/2LIC2 50 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Collector-emitter MAX BD647 80 BD649 100 BD651 120 IC = 30 mA IB = 0 VCE = 30 V IB = 0 BD645 0.5 Collector-emitter VCE = 40 V IB = 0 BD647 0.5 cut-off current VCE = 50 V IB = 0 BD649 0.5 breakdown voltage (see Note 5) TYP V VCE = 60 V IB = 0 BD651 0.5 VCB = 60 V IE = 0 BD645 0.2 VCB = 80 V IE = 0 BD647 0.2 VCB = 100 V IE = 0 BD649 0.2 Collector cut-off VCB = 120 V IE = 0 BD651 0.2 current VCB = 40 V IE = 0 TC = 150C BD645 2.0 VCB = 50 V IE = 0 TC = 150C BD647 2.0 VCB = 60 V IE = 0 TC = 150C BD649 2.0 VCB = 70 V IE = 0 TC = 150C BD651 2.0 VEB = 5V IC = 0 (see Notes 5 and 6) VCE = 3V IC = 3A Emitter cut-off current Forward current transfer ratio UNIT 60 5 (see Notes 5 and 6) mA mA mA 750 2 Collector-emitter IB = 12 mA IC = 3A saturation voltage IB = 50 mA IC = 5A IB = 50 mA IC = 5A (see Notes 5 and 6) 3 V IC = 3A (see Notes 5 and 6) 2.5 V Base-emitter saturation voltage Base-emitter voltage VCE = 3V (see Notes 5 and 6) 2.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN 2.0 C/W RJA Junction to free air thermal resistance 62.5 C/W 2 TYP MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 10 TCS130AB 2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 1*0 TC = -40C TC = 25C TC = 100C 0*5 0*5 IC - Collector Current - A 1*0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3*0 2*5 TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 10 IC - Collector Current - A Figure 3. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS130AC 1*0 0*1 BD645 BD647 BD649 BD651 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AC Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.