1
Item Symbol Rating Unit
Drain-source voltage V DS 500
Continuous drain current ID±27
Pulsed drain current ID(puls] ±108
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 27
Maximum Avalanche Energy EAV *1 914
Max. power dissipation PD400
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3339-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=500V
VGS=±30V
ID=13.5A VGS=10V
ID=13.5A VDS=25V
VCC=300V ID=27A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
nC
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.3125
50.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
Vcc=250V
ID=27A
VGS=10V
L=2.30mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
W
°C
*1 L=2.30mH, Vcc=50V *2 Tch=150°C
500
2.5 3.0 3.5
10 500
0.2 1.0
10 100
0.16 0.2
11 22
4300 6450
630 945
285 430
40 60
145 220
315 475
150 225
198 300
38 60
81 125
27 1.2 1.8
660
15.0
-55 to +150 <
Gate(G)
Source(S)
Drain(D)
11.6±0.2
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
2
Characteristics
2SK3339-01 FUJI POWER MOSFET
0 25 50 75 100 125 150
0
100
200
300
400
500
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C] 100101102103
10-1
100
101
102
100ms
10ms
1ms
100µs
10µs
Safe operating area
ID=f(VDS):Single Pulse,Tc=25°C
t=
1µs
D.C.
ID [A]
VDS [V]
0 2 4 6 8 10 12 14 16
0
10
20
30
40
50
60
20V 10V
15V 6.5V 6.0V
5.5V
5.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
4.5V
VGS=4.0V
012345678
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
0 102030405060
0.0
0.1
0.2
0.3
0.4
0.5
0.6
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
15V
10V
20V
6.5V
6.0V
5.5V
5.0VVGS=4.5V
t
T
D=
t
T
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
3
2SK3339-01 FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RDS(on) [ Ω ]
Tch [°C]
typ.max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=13.5A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
max.
typ.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
0 50 100 150 200 250 300 350
0
5
10
15
20
25
Qg [C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=27A,Tch=25°C
VGS [V]
400V
250V
Vcc= 100V
10-2 10-1 100101102
10-11
10-10
10-9
10-8
10-7
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
10-1 100101102
101
102
103
104
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
4
10-5 10
-4 10-3 10
-2 10-1 10
0101
10
-3
10
-2
10
-1
100
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
Zth(ch-c) [K/W]
t [s]
0.5
0.2
0.02
0.05
0.1
0.01
0
2SK3339-01 FUJI POWER MOSFET
0 25 50 75 100 125 150
0
200
400
600
800
1000
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=27A
t
T
D=
t
T
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
