NTE2379
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
DDynamic dv/dt Rating
DRepetitive Avalanche Rated
DFast Switching
DEase of Paralleling
DSimple Drive Requirements
Absolute Maximum Ratings:
Gate–Source Voltage, VGS ±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, ID
Continuous (VGS = 10V)
TC = +25°C 6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 3.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), IGM ±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 2), EAS 570mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), IAR 6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), EAR 13mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt 3V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL+300°C. . . . . . . . . . . .
Thermal Resistance:
Maximum Junction–to–Case, RthJC 1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS 0.5°C/W. . . . . .
Maximum Junction–to–Ambient (Free Air Operation), RthJA 62°C/W. . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25°C, l = 27mH, RG = 25Ω, IAS = 6.2A.
Note 3. ISD ≤ 6.2A, di/dt ≤ 80A/µA, VDD ≤ V(BR)DSS, TJ ≤ +150°C.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 – – V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 –4.0 V
Gate–Source Leakage Forward IGSS VGS = 20V – – 100 nA
Gate–Source Leakage Reverse IGSS VGS = –20V – – –100 nA
Drain–Source Leakage Current IDSS VDS = 600V, VGS = 0 – – 100 µA
VDS = 480V, VGS = 0, TC = +150°C– – 500 µA
Static Drain–Source ON Resist-
ance RDS(on) VGS = 10V, ID = 3.7A, Note 4 – – 1.2 Ω
Forward Transconductance gfs VDS ≥ 100V, ID = 3.7A, Note 4 4.7 – – mhos
Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz –1300 –pF
Output Capacitance Coss –160 –pF
Reverse Transfer Capacitance Crss –30 –pF
Turn–On Delay Time td(on) VDD = 300V, ID = 6.2A, RG = 9.1Ω,
Ω
–32 –ns
Rise Time trRD = 47Ω, Note 4 –18 –ns
Turn–Off Delay Time td(off) –55 –ns
Fall Time tf–20 –ns
Total Gate Charge QgVGS = 10V, ID = 6.2A, VDS = 360V – – 60 nC
Gate–Source Charge Qgs – – 8.3 nC
Gate–Drain (“Miller”) Charge Qgd – – 30 nC
Internal Drain Inductance LDBetween lead, 6mm (.250 in) from package –4.5 –nH
Internal Source Inductance LSand center of die contact –7.5 –nH
Source–Drain Diode Ratings and Characteristics
Continuous Source Current IS(Body Diode) – – 6.2 A
Pulse Source Current ISM (Body Diode) Note 1 – – 25 A
Diode Forward Voltage VSD TJ = +25°C, IS = 6.2A, VGS = 0V, Note 4 – – 1.5 V
Reverse Recovery Time trr TJ = +25°C, IF = 6.2A, di/dt = 100A/µs, –450 940 ns
Reverse Recovery Charge Qrr Note 4 –3.8 7.9 µC
Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
