DATA SH EET
Product data sheet
Supersedes data of 2002 Aug 09 2002 Nov 22
DISCRETE SEMICONDUCTORS
BC817DS
NPN general purpose double
transistor
db
ook, halfpage
M3D302
2002 Nov 22 2
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
FEATURES
•High current (500 mA)
•600 mW total powe r dissipation
•Replaces two SOT23 packaged transistors on same
PCB area.
APPLICATIONS
•General purpose switc hing and amplification
•Push-pull amplifiers
•Multi-phase step per motor drivers.
DESCRIPTION
NPN transistor pair in a SOT457 (SC-74) plastic package.
MARKING
TYPE NUMBER MARKING CODE
BC817DS N3
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
132
4
56
Top view
MAM340
132
TR1 TR2
64
5
Fig.1 Simplified outline (SOT457) and sym bol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 45 V
ICcollector current (DC) 500 mA
ICM peak collector current 1 A
LIMITING VALUES
In accordance with the A bsolute Maxi m u m Rating System (IEC 60134).
Note
1. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor unless otherwise specified
VCBO collector-base volta ge open emitter −50 V
VCEO collector-emitter voltage open base −45 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −500 mA
ICM peak collector current −1 A
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −370 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −600 mW
2002 Nov 22 3
NXP Semiconductors Pr oduct data shee t
NPN general purpose double transistor BC817DS
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Notes
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2. VBE decreases by approximately −2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal res istance from junction to
ambient note 1 208 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
ICBO collector-base cut-off current VCB = 20 V; IE = 0 −−100 nA
VCB = 20 V; IE = 0; Tj = 150 °C−−5μA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−100 nA
hFE DC current gain VCE = 1 V; IC = 100 mA; note 1 160 −400
VCE = 1 V; IC = 500 mA; note 1 40 − −
VCEsat collector-emitte r sa turation v oltage IC = 500 mA; IB = 50 mA; note 1 −−700 mV
VBE base-emitter vo ltage VCE = 1 V; IC = 500 mA;
notes 1 and 2 −−1.2 V
Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz −5−pF
fTtransition frequen c y VCE = 5 V; IC = 10 mA;
f = 100 MHz 100 −−MHz
2002 Nov 22 4
NXP Semiconductors Pr oduct data shee t
NPN general purpose double transistor BC817DS
handbook, halfpage
0
500
100
200
300
400
MBL747
10−111010
2IC (mA)
hFE
103
(3)
(1)
(2)
Fig.2 DC current gain as a fu nction of collector
current; ty pical values.
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
010
1000
0
200
400
600
800
2468
VCE (V)
IC
(mA)
MBL748
(1) (2) (3) (4) (5)
(6)
(7)
(8)
(9)
(10)
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 15 mA.
(2) IB = 13.5 mA.
(3) IB = 12 mA.
(4) IB = 10.5 mA.
(5) IB = 9 mA.
(6) IB = 7.5 mA.
(7) IB = 6 mA.
(8) IB = 4.5 mA.
(9) IB = 3 mA.
(10) IB = 1.5 mA.
handbook, halfpage
103
102
10
MBL749
10−1110 IC (mA)
VCEsat
(mV)
102103
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MBL750
10
−1
110 IC (mA)
VBE
(mV)
10
2
10
3
(1)
(2)
(3)
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
VCE = 1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2002 Nov 22 5
NXP Semiconductors Pr oduct data shee t
NPN general purpose double transistor BC817DS
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT457 SC-74
wBM
bp
D
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT45
7
UNIT A1bpcDEHELpQywv
mm 0.1
0.013 0.40
0.25 3.1
2.7
0.26
0.10 1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2 0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
2002 Nov 22 6
NXP Semiconductors Pr oduct data shee t
NPN general purpose double transistor BC817DS
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reason ably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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infringement and limitation of liability, unless explicitly
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No change s were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/02/pp7 Date of release: 2002 Nov 22 Document orde r number: 9397 750 10582
