SFH 205 FA
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
Silicon-PIN-Photodiode with Daylight Filter
Lead (Pb) Free Product - RoHS Compliant
2007-04-03 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen bei 880 nm
• Kurze Schaltzeit (typ. 20 ns)
•5 mm-Plastikbauform im LED-Gehäuse
• Auch gegurtet lieferbar
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type Bestellnummer
Ordering Code
SFH 205 FA Q62702P1677
Features
• Especially suitable for applications of 880 nm
• Short switching time (typ. 20 ns)
•5 mm LED plastic package
• Also available on tape and reel
Applications
• IR-remote control of hi-fi and TV sets, video
tape recorders, dimmers, remote control of
various equipment
• Photointerrupters
2007-04-03 2
SFH 205 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR32 V
Verlustleistung, TA = 25 °C
Power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom
Photocurrent
VR = 5 V, Ee = 1 mW/cm2
IP60 (≥ 45) μA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ740 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A7.00 mm2
Abmessungen der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L × B
L × W
2.65 × 2.65 mm × mm
Halbwinkel
Half angle ϕ ± 60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
Spektrale Fotoempfindlichkeit
Spectr al sensitivity Sλ0.63 A/W
Quantenausbeute
Quantum yield η0.9 Electrons
Photon
Leerlaufspannung, Ee = 1 mW/cm2
Open-circuit voltage VO350 (≥ 280) mV
SFH 205 FA
2007-04-03 3
Kurzschlußstrom, Ee = 1 mW/cm2
Short-circuit current ISC 56 μA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 μA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.03 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 4.0 × 10– 14
Nachweisgrenze, VR = 10 V
Detection limit D* 6.6 × 1012
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
SFH 205 FA
2007-04-03 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Characteristics
Srel = f (ϕ)
λ
OHF01430
400
rel
S
0600 800 1000 nm 1200
10
20
30
40
50
60
70
80
%
100
0
OHF00080
Ι
R
R
V
05 10 15 V 20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit Voltage VO = f (Ee)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01097
e
0
10
P
Ι
10
1
10
2
10
4
10
-1
10
0
10
1
10
2
4
10
3
10
2
10
1
10
10
0
V
O
μAmV
Ι
P
V
O
3
10
μW/cm
2
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00394
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10 0
10 1
10 2
10 3
nA
20 40 60 80 ˚C 100
SFH 205 FA
2007-04-03 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
6.9 (0.272)
6.3 (0.248)
4.0 (0.157)
34 (1.339)
32 (1.260)
1.8 (0.071)
1.2 (0.047)
0.8 (0.031)
0.4 (0.016)
2.54 (0.100)
spacing
4.1 (0.161)
3.7 (0.146)
5.1 (0.201)
4.7 (0.185)
Cathode
Area not flat
Radiant sensitive area
GEOY6651
0.4 (0.016)
0.6 (0.024) 0.5 (0.020)
0.3 (0.012)
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
2007-04-03 6
SFH 205 FA
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support dev ices or systems 2 with the expres s written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be en dangered.
