NTE2345 (NPN) & NTE2346 (PNP)
Silicon Complementary Transistors
General Purpose Darlington, Power Amplifier
Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an
SOT–82 type package designed for use in audio output stages and general amplifier and switching
applications..
Features:
DHigh DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V
DJunction Temperature to +150°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (tp ≤ 10ms, δ ≤ 0.1) 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 2.08K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA 100K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO IE = 0, VCBO = 120V – – 0.2 mA
IE = 0, VCBO = 120V, TJ = +150°C – – 2mA mA
ICEO IB = 0, VCEO = 60V – – 0.5 mA
Emitter Cutoff Current IEBO IC = 0, VEBO = 5V – – 5 mA
DC Current Gain hFE IC = 500mA, VCEO = 3V, Note 1 – 2700 –
IC = 3A, VCEO = 3V, Note 1 750 – –
IC = 6A, VCEO = 3V, Note 1 – 400 –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter Voltage VBE IC = 3A, VCEO = 3V, Note 2 2.5 – – V
Collector–Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 12mA 2.0 – – V
Small–Signal Current Gain hfe IC = 3A, VCEO = 3V, f = 1MHz 10 – –
Cut–Off Frequency fhfe IC = 3A, VCEO = 3V –100 –kHz
Diode, Forward Voltage VFIF = 3A –1.8 –V
Second Breakdown Collector Current
Non–Repetitive, without Heatsink I(SB) VCEO = 60V, tp = 25ms 1– – A
Turn–On Time ton IC(on) = 3A, IB(on) = IB(off) = 12mA –1 2 µs
Turn–Off Time toff IC(on) = 3A, IB(on) = IB(off) = 12mA –5 10 µs
Note 2. VBE decreases by about 3.8mV/K with increasing temperature.
Schematic Diagram
NPN PNP
B
C
E
B
C
E
BCE
.118 (3.0)
Min
.147
(3.75)
.100 (2.54)
.090 (2.29) .047 (1.2)
.307 (7.8)
Max .100 (2.54)
See Note
.437
(11.1)
Max
.602
(15.3)
Min
Note: Collector connected to metal part of mounting surface.
