August 2009
FCP16N60N / FCPF16N60NT N-Channel MOSFET
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com1
SupreMOS
TM
FCP16N60N / FCPF16N60NT
N-Channel MOSFET
600V, 16A, 0.170Ω
Features
• R
DS(on)
= 0.17Ω ( Typ.)@ V
GS
= 10V, I
D
= 8A
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
TO-220F
FCPF Series
G S
D
G D S
TO-220
FCP Series
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol Parameter FCP16N60N FCPF16N60NT Units
V
DSS
Drain to Source Voltage 600 V
V
GSS
Gate to Source Voltage ±30 V
I
D
Drain Current -Continuous (T
C
= 25
o
C) 16.0 16.0* A
-Continuous (T
C
= 100
o
C) 10.1 10.1*
I
DM
Drain Current - Pulsed (Note 1) 48.0 48.0* A
E
AS
Single Pulsed Avalanche Energy (Note 2) 355 mJ
I
AR
Avalanche Current 5.3 A
E
AR
Repetitive Avalanche Energy 1.34 mJ
dv/dt MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
Power Dissipation (T
C
= 25
o
C) 134.4 35.7 W
- Derate above 25
o
C 1.08 0.29 W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300
o
C
Symbol Parameter FCP16N60N FCPF16N60NT Units
R
θJC
Thermal Resistance, Junction to Case 0.93 3.5
o
C/WR
θCS
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
R
θJA
Thermal Resistance, Junction to Ambient 62.5 62.5
*Drain current limited by maximum junction temperature
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25
o
C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FCP16N60N FCP16N60N TO-220 - - 50
FCPF16N60NT FCPF16N60NT TO-220F - - 50
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 1mA, V
GS
= 0V, T
C
= 25
o
C 600 - - V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= 1mA, Referenced to 25
o
C - 0.73 - V/
o
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 480V, V
GS
= 0V - - 10 µA
V
DS
= 480V, V
GS
= 0V, T
C
= 125
o
C - - 100
I
GSS
Gate to Body Leakage Current V
GS
= ±30V, V
DS
= 0V - - ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250µA 2.0 - 4.0 V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10V, I
D
= 8A - 0.170 0.199 Ω
g
FS
Forward Transconductance V
DS
= 40V, I
D
= 8A - 13 - S
C
iss
Input Capacitance V
DS
= 100V, V
GS
= 0V
f = 1MHz
- 1630 2170 pF
C
oss
Output Capacitance - 70 95 pF
C
rss
Reverse Transfer Capacitance - 5 10 pF
C
oss
Output Capacitance V
DS
= 380V, V
GS
= 0V, f = 1MHz - 40 60 pF
C
oss
eff. Effective Output Capacitance V
DS
= 0V to 480V, V
GS
= 0V - 176 - pF
Q
g(tot)
Total Gate Charge at 10V V
DS
= 380V, I
D
= 8A,
V
GS
= 10V
(Note 4)
- 40.2 52.3 nC
Q
gs
Gate to Source Gate Charge - 6.7 - nC
Q
gd
Gate to Drain “Miller” Charge - 12.9 - nC
ESR Equivalent Series Resistance (G-S) Drain Open 2.9 Ω
t
d(on)
Turn-On Delay Time V
DD
= 380V, I
D
= 8A
R
G
= 4.7Ω
(Note 4)
- 15.8 41.6 ns
t
r
Turn-On Rise Time - 15.5 41.0 ns
t
d(off)
Turn-Off Delay Time - 60.3 130.6 ns
t
f
Turn-Off Fall Time - 20.2 50.4 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 16 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 48 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0V, I
SD
= 8A - - 1.2 V
t
rr
Reverse Recovery Time V
GS
= 0V, I
SD
= 8A
dI
F
/dt = 100A/µs - 319 - ns
Q
rr
Reverse Recovery Charge - 4.4 - µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 5.3A, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤ 16A, di/dt ≤ 200A/µs, V
DD
= 380V, Starting T
J
= 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10 20
0.1
1
10
100
*Notes:
1. 250
µ
µµ
µ
s Pulse Test
2. T
C
= 25
o
C
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
I
D
, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
2468
0.1
1
10
100
-55
o
C
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
µ
µµ
µ
s Pulse Test
25
o
C
I
D
, Drain Current[A]
V
GS
, Gate-Source Voltage[V]
0 10 20 30 40 50
0.1
0.2
0.3
0.4
0.5
0.6
*Notes: TC
= 25
o
C
VGS = 20V
VGS = 10V
R
DS(ON)
[
Ω
Ω
Ω
Ω
]
,
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
µ
µµ
µ
s Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
0.1 1 10 100 600
0
2500
5000
7500
10000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Notes:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
0 10 20 30 40 50
0
2
4
6
8
10
*Notes:
I
D
= 8A
V
DS
= 120V
V
DS
= 380V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
_ FCPF16N60NT
Figure 11. Maximum Drain Current
vs. Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature
[
oC
]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 8A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature
[
o
C
]
1 10 100 1000
0.01
0.1
1
10
100
20
µ
µµ
µ
s
100
µ
µµ
µ
s
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
25 50 75 100 125 150
0
5
10
15
20
I
D
, Drain Current [A]
T
C
, Case Temperature
[
o
C
]
_
FCP16N60N
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
Figure 12.
Transient Thermal Response Curve _ FCP16N60N
Figure 13. Transient Thermal Response Curve _ FCPF16N60NT
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.005
0.01
0.1
1
2
0.01
0.1
0.2
0.05
0.02 *Notes:
1. Zθ
θθ
θJC(t) = 0.93oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * Zθ
θθ
θJC(t)
0.5
Single pulse
Thermal Response
[
Z
θ
θ
θ
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
10-5 10-4 10-3 10-2 10-1 1 10 102
0.01
0.1
1
5
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θ
θθ
θ
JC
(t) = 3.5
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
θθ
θ
JC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
θ
θ
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
D U T
V
D S
+
_
D r i v e r
R
G
S a m e T y p e
a s D U T
V
G S
• d v / d t c o n t r o ll e d b y R G
• I S D c o n t r o lle d b y p u l s e p e r io d
V
D D
L
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D i o d e
F o r w a r d V o l t a g e D r o p
V
S D
IF M , B o d y D io d e F o r w a r d C u r r e n t
B o d y D io d e R e v e r s e C u r r e n t
I
R M
B o d y D i o d e R e c o v e r y d v / d t
d i / d t
D = G a t e P u ls e W id t h
G a t e P u ls e P e r io d
--------------------------
D U T
V
D S
+
_
D r i v e r
R
G
S a m e T y p e
a s D U T
V
G S
• d v / d t c o n t r o ll e d b y R G
• I S D c o n t r o lle d b y p u l s e p e r io d
V
D D
LL
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D i o d e
F o r w a r d V o l t a g e D r o p
V
S D
IF M , B o d y D io d e F o r w a r d C u r r e n t
B o d y D io d e R e v e r s e C u r r e n t
I
R M
B o d y D i o d e R e c o v e r y d v / d t
d i / d t
D = G a t e P u ls e W id t h
G a t e P u ls e P e r io d
--------------------------
D = G a t e P u ls e W id t h
G a t e P u ls e P e r io d
--------------------------
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
8
Dimensions in Millimeters
Mechanical Dimensions
TO-220
FCP16N60N / FCPF16N60NT N-Channel MOSFET
FCP16N60N / FCPF16N60NT Rev. A1 www.fairchildsemi.com
9
Mechanical Dimensions
TO-220F
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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