74AUP1G125GF,132 - NXP Semiconductors

1. General description

The 74AUP1G125 provides a single non-inverting buffer/line driver with 3-state output.

The 3-state output is controlled by the output enable input (OE). A HIGH level at pin OE

causes the output to assume a high-impedance OFF-state. This device has the

input-disable feature, which allows floating input signals. The input s are disabled when th e

output enable input OE) is HIGH.

Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall

times across the entire VCC range fr om 0.8 V to 3.6 V. This device ensu re s a ver y low

static and dynamic power con su mp tio n acro ss th e en tir e V CC range from 0.8 V to 3.6 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF

circuitry disabl e s the outpu t, pr ev en tin g a dam ag in g ba ckf low curr en t th ro ug h th e de vice

when it is powered down.

2. Features and benefits

Wide supply voltage range from 0.8 V to 3.6 V

High noise immunity

Complies with JEDEC standards:

JESD8-12 (0.8 V to 1.3 V)

JESD8-11 (0.9 V to 1.65 V)

JESD8-7 (1.2 V to 1. 95 V)

JESD8-5 (1.8 V to 2.7 V)

JESD8-B (2.7 V to 3.6 V)

ESD protection:

HBM JESD22-A114F Class 3A exceeds 5000 V

MM JESD22-A115-A exce eds 20 0 V

CDM JESD22-C101E exceeds 1000 V

Low static power consumption; ICC = 0.9 A (maximum)

Latch-up pe rform a nc e exceeds 100 mA per JESD 78 Class II

Inputs accept voltages up to 3.6 V

Low noise overshoot and undershoot < 10 % of VCC

Input-disab le feat ur e allo ws flo at ing input co nd itio ns

IOFF circuitry provides partial Power-down mode operation

Multiple package options

Specified from 40 Cto+85C and 40 Cto+125C

74AUP1G125

Low-power buffer/line driver; 3-state

Rev. 6 — 15 August 2012 Product data sheet

Product data sheet Rev. 6 — 15 August 2012 2 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

3. Ordering information

4. Marking

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.

5. Functional diagram

Table 1. Ordering information

Type number Package

Temperature range Name Description Version

74AUP1G125GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads;

body width 1.25 mm SOT353-1

74AUP1G125GM 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;

6 terminals; body 1 1.45 0.5 mm SOT886

74AUP1G125GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;

6 terminals; body 1 10.5 mm SOT891

74AUP1G125GN 40 C to +125 C XSON6 extremely thin small outline package; no leads;

6 terminals; body 0.9 1.0 0.35 mm SOT1115

74AUP1G125GS 40 C to +125 C XSON6 extremely thin small outline package; no leads;

6 terminals; body 1.0 1.0 0.35 mm SOT1202

74AUP1G125GX 40 C to +125 C X2SON5 X2SON5: plastic thermal enhanced extremely thin

small outline package; no leads; 5 terminals;

body 0.8 0.8 0.35 mm

SOT1226

Table 2. Marking

Type number Marking code[1]

74AUP1G125GW pM

74AUP1G125GM pM

74AUP1G125GF pM

74AUP1G125GN pM

74AUP1G125GS pM

74AUP1G125GX pM

Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram

mna118

mna119

001aad068

Product data sheet Rev. 6 — 15 August 2012 3 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

6. Pinning information

6.1 Pinning

6.2 Pin description

Fig 4. Pin configu ration SOT353-1 Fig 5. Pin configuration SOT886

74AUP1G125

OE V

GND Y

001aab651

74AUP1G125

001aab652

GND

n.c.

VCC

Transparent top view

Fig 6. Pin configu ration SOT891, SOT1115 and

SOT1202 Fig 7. Pin configuration SOT1226 (X2S ON5)

74AUP1G125

001aaf014

GND

n.c.

VCC

Transparent top view

OE VCC

GND

aaa-003010

Transparent top view

74AUP1G125

Table 3. Pin description

Symbol Pin Description

TSSOP5 and X2SON5 XSON6

OE 1 1 output enable input

A 2 2 data input

GND 3 3 ground (0 V)

Y 4 4 data output

n.c. - 5 not connected

VCC 5 6 supply voltage

Product data sheet Rev. 6 — 15 August 2012 4 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

7. Functional description

[1] H = HIGH voltage level;

L = LOW voltage level;

X = Don’t care;

Z = high-impedance OFF-state.

8. Limiting values

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] For TSSOP5 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.

For XSON6 and X2SON5 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.

9. Recommended operating conditions

Table 4. Function table[1]

Input Output

OE A Y

LLL

LHH

HXZ

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage 0.5 +4.6 V

IIK input clamping current VI<0V 50 - mA

VIinput voltage [1] 0.5 +4.6 V

IOK output clamping current VO<0V 50 - mA

VOoutput voltage Active mode [1] 0.5 VCC +0.5 V

Power-down mode [1] 0.5 +4.6 V

IOoutput curren t VO=0 VtoV

CC -20 mA

ICC supply current - +50 mA

IGND ground current 50 - mA

Tstg storage temperature 65 +150 C

Ptot total power dissipation Tamb =40 C to +125 C[2] - 250 mW

Table 6. Recommended operating con ditions

Symbol Parameter Conditions Min Max Unit

VCC supply voltage 0.8 3.6 V

VIinput voltage 0 3.6 V

VOoutput voltage Active mode 0 VCC V

Power-down mode; VCC =0V 0 3.6 V

Tamb ambient temperature 40 +125 C

t/V input transition rise and fall rate VCC = 0.8 V to 3.6 V 0 200 ns/V

Product data sheet Rev. 6 — 15 August 2012 5 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

10. Static characteristics

Table 7. Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

Tamb = 25 C

VIH HIGH-level input voltage VCC = 0.8 V 0.70  VCC -- V

VCC = 0.9 V to 1.95 V 0.65  VCC -- V

VCC = 2.3 V to 2.7 V 1.6 - - V

VCC = 3.0 V to 3.6 V 2.0 - - V

VIL LOW-level input voltage VCC = 0.8 V - - 0.30  VCC V

VCC = 0.9 V to 1.95 V - - 0.35  VCC V

VCC = 2.3 V to 2.7 V - - 0.7 V

VCC = 3.0 V to 3.6 V - - 0.9 V

VOH HIGH-level output voltage VI = VIH or VIL

IO = 20 A; VCC = 0.8 V to 3.6 V VCC  0.1 - - V

IO = 1.1 mA; VCC = 1.1 V 0.75  VCC -- V

IO = 1.7 mA; VCC = 1.4 V 1.11 - - V

IO = 1.9 mA; VCC = 1.65 V 1.32 - - V

IO = 2.3 mA; VCC = 2.3 V 2.05 - - V

IO = 3.1 mA; VCC = 2.3 V 1.9 - - V

IO = 2.7 mA; VCC = 3.0 V 2.72 - - V

IO = 4.0 mA; VCC = 3.0 V 2.6 - - V

VOL LOW-level output voltage VI = VIH or VIL

IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V

IO = 1.1 mA; VCC = 1.1 V - - 0.3  VCC V

IO = 1.7 mA; VCC = 1.4 V - - 0.31 V

IO = 1.9 mA; VCC = 1.65 V - - 0.31 V

IO = 2.3 mA; VCC = 2.3 V - - 0.31 V

IO = 3.1 mA; VCC = 2.3 V - - 0.44 V

IO = 2.7 mA; VCC = 3.0 V - - 0.31 V

IO = 4.0 mA; VCC = 3.0 V - - 0.44 V

IIinput leakage current VI = GND to 3.6 V ; VCC = 0 V to 3.6 V - - 0.1 A

IOZ OFF-state output current VI = VIH or VIL; VO = 0 V to 3.6 V;

VCC = 0 V to 3.6 V --0.1 A

IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.2 A

IOFF additional power-off

leakage current VI or VO = 0 V to 3.6 V;

VCC = 0 V to 0.2 V --0.2 A

ICC supply current VI = GND or VCC; IO=0A;

VCC = 0.8 V to 3.6 V --0.5A

Product data sheet Rev. 6 — 15 August 2012 6 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

ICC additional supply current data input; VI = VCC  0.6 V; IO=0A;

VCC =3.3V [1] --40A

OE input; VI = VCC  0.6 V; IO = 0 A;

VCC =3.3V [1] --110A

all inputs; VI = GND to 3.6 V;

OE =V

CC; VCC = 0.8 V to 3.6 V [2] --1A

CIinput capacitance VCC = 0 V to 3.6 V; VI = GND or VCC -0.9-pF

COoutput capacitance

output enabled VO = GND; VCC = 0 V - 1.7 - pF

output disabled VCC = 0 V to 3.6 V; VO = GND or VCC -1.5-pF

Tamb = 40 C to +85 C

VIH HIGH-level input voltage VCC = 0.8 V 0.70  VCC -- V

VCC = 0.9 V to 1.95 V 0.65  VCC -- V

VCC = 2.3 V to 2.7 V 1.6 - - V

VCC = 3.0 V to 3.6 V 2.0 - - V

VIL LOW-level input voltage VCC = 0.8 V - - 0.30  VCC V

VCC = 0.9 V to 1.95 V - - 0.35  VCC V

VCC = 2.3 V to 2.7 V - - 0.7 V

VCC = 3.0 V to 3.6 V - - 0.9 V

VOH HIGH-level output voltage VI = VIH or VIL

IO = 20 A; VCC = 0.8 V to 3.6 V VCC  0.1 - - V

IO = 1.1 mA; VCC = 1.1 V 0.7  VCC -- V

IO = 1.7 mA; VCC = 1.4 V 1.03 - - V

IO = 1.9 mA; VCC = 1.65 V 1.30 - - V

IO = 2.3 mA; VCC = 2.3 V 1.97 - - V

IO = 3.1 mA; VCC = 2.3 V 1.85 - - V

IO = 2.7 mA; VCC = 3.0 V 2.67 - - V

IO = 4.0 mA; VCC = 3.0 V 2.55 - - V

VOL LOW-level output voltage VI = VIH or VIL

IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V

IO = 1.1 mA; VCC = 1.1 V - - 0.3  VCC V

IO = 1.7 mA; VCC = 1.4 V - - 0.37 V

IO = 1.9 mA; VCC = 1.65 V - - 0.35 V

IO = 2.3 mA; VCC = 2.3 V - - 0.33 V

IO = 3.1 mA; VCC = 2.3 V - - 0.45 V

IO = 2.7 mA; VCC = 3.0 V - - 0.33 V

IO = 4.0 mA; VCC = 3.0 V - - 0.45 V

IIinput leakage current VI = GND to 3.6 V ; VCC = 0 V to 3.6 V - - 0.5 A

IOZ OFF-state output current VI = VIH or VIL; VO = 0 V to 3.6 V;

VCC = 0 V to 3.6 V --0.5 A

IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.5 A

Table 7. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 6 — 15 August 2012 7 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

IOFF additional power-off

leakage current VI or VO = 0 V to 3.6 V;

VCC = 0 V to 0.2 V --0.6 A

ICC supply current VI = GND or VCC; IO=0A;

VCC = 0.8 V to 3.6 V --0.9A

ICC additional supply current data input; VI = VCC  0.6 V; IO=0A;

VCC =3.3V [1] --50A

OE input; VI = VCC  0.6 V; IO = 0 A;

VCC =3.3V [1] - - 120 A

all inputs; VI = GND to 3.6 V;

OE =V

CC; VCC = 0.8 V to 3.6 V [2] --1A

Tamb = 40 C to +125 C

VIH HIGH-level input voltage VCC = 0.8 V 0.75  VCC -- V

VCC = 0.9 V to 1.95 V 0.70  VCC -- V

VCC = 2.3 V to 2.7 V 1.6 - - V

VCC = 3.0 V to 3.6 V 2.0 - - V

VIL LOW-level input voltage VCC = 0.8 V - - 0.25  VCC V

VCC = 0.9 V to 1.95 V - - 0.30  VCC V

VCC = 2.3 V to 2.7 V - - 0.7 V

VCC = 3.0 V to 3.6 V - - 0.9 V

VOH HIGH-level output voltage VI = VIH or VIL

IO = 20 A; VCC = 0.8 V to 3.6 V VCC  0.11 - - V

IO = 1.1 mA; VCC = 1.1 V 0.6  VCC -- V

IO = 1.7 mA; VCC = 1.4 V 0.93 - - V

IO = 1.9 mA; VCC = 1.65 V 1.17 - - V

IO = 2.3 mA; VCC = 2.3 V 1.77 - - V

IO = 3.1 mA; VCC = 2.3 V 1.67 - - V

IO = 2.7 mA; VCC = 3.0 V 2.40 - - V

IO = 4.0 mA; VCC = 3.0 V 2.30 - - V

VOL LOW-level output voltage VI = VIH or VIL

IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.11 V

IO = 1.1 mA; VCC = 1.1 V - - 0.33  VCC V

IO = 1.7 mA; VCC = 1.4 V - - 0.41 V

IO = 1.9 mA; VCC = 1.65 V - - 0.39 V

IO = 2.3 mA; VCC = 2.3 V - - 0.36 V

IO = 3.1 mA; VCC = 2.3 V - - 0.50 V

IO = 2.7 mA; VCC = 3.0 V - - 0.36 V

IO = 4.0 mA; VCC = 3.0 V - - 0.50 V

IIinput leakage current VI = GND to 3.6 V ; VCC = 0 V to 3.6 V - - 0.75 A

IOZ OFF-state output current VI = VIH or VIL; VO = 0 V to 3.6 V;

VCC = 0 V to 3.6 V --0.75 A

IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.75 A

Table 7. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 6 — 15 August 2012 8 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

[1] One input at VCC  0.6 V, other input at VCC or GND.

[2] To show ICC remains very low when the input-disable feature is enabled.

11. Dynamic characteristics

IOFF additional power-off

leakage current VI or VO = 0 V to 3.6 V;

VCC = 0 V to 0.2 V --0.75 A

ICC supply current VI = GND or VCC; IO=0A;

VCC = 0.8 V to 3.6 V --1.4A

ICC additional supply current data input; VI = VCC  0.6 V; IO=0A;

VCC =3.3V [1] --75A

OE input; VI = VCC  0.6 V; IO = 0 A;

VCC =3.3V [1] - - 180 A

all inputs; VI = GND to 3.6 V;

OE =V

CC; VCC = 0.8 V to 3.6 V [2] --1A

Table 7. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10

Symbol Parameter Conditions Min Typ [1] Max Unit

Tamb = 25 C; CL = 5 pF

tpd propagation delay A to Y; see Figure 8 [2]

VCC = 0.8 V - 20.6 - ns

VCC = 1.1 V to 1.3 V 2.8 5.5 10.5 ns

VCC = 1.4 V to 1.6 V 2.2 3.9 6.1 ns

VCC = 1.65 V to 1.95 V 1.9 3.2 4.8 ns

VCC = 2.3 V to 2.7 V 1.6 2.6 3.6 ns

VCC = 3.0 V to 3.6 V 1.4 2.4 3.1 ns

ten enable time OE to Y; see Figure 9 [3]

VCC = 0.8 V - 69.9 - ns

VCC = 1.1 V to 1.3 V 3.1 6.1 11.8 ns

VCC = 1.4 V to 1.6 V 2.5 4.2 6.6 ns

VCC = 1.65 V to 1.95 V 2.1 3.4 5.1 ns

VCC = 2.3 V to 2.7 V 1.8 2.6 3.7 ns

VCC = 3.0 V to 3.6 V 1.7 2.4 3.1 ns

tdis disable time OE to Y; see Figure 9 [4]

VCC = 0.8 V - 14.3 - ns

VCC = 1.1 V to 1.3 V 2.7 4.3 6.5 ns

VCC = 1.4 V to 1.6 V 2.1 3.2 4.4 ns

VCC = 1.65 V to 1.95 V 2.0 3.0 4.3 ns

VCC = 2.3 V to 2.7 V 1.4 2.2 2.9 ns

VCC = 3.0 V to 3.6 V 1.7 2.5 3.2 ns

Product data sheet Rev. 6 — 15 August 2012 9 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

Tamb = 25 C; CL = 10 pF

tpd propagation delay A to Y; see Figure 8 [2]

VCC = 0.8 V - 24.0 - ns

VCC = 1.1 V to 1.3 V 3.2 6.4 12.3 ns

VCC = 1.4 V to 1.6 V 2.1 4.5 7.3 ns

VCC = 1.65 V to 1.95 V 1.9 3.8 5.5 ns

VCC = 2.3 V to 2.7 V 2.1 3.2 4.2 ns

VCC = 3.0 V to 3.6 V 1.8 3.0 3.8 ns

ten enable time OE to Y; see Figure 9 [3]

VCC = 0.8 V - 73.7 - ns

VCC = 1.1 V to 1.3 V 3.6 6.9 13.5 ns

VCC = 1.4 V to 1.6 V 2.3 4.8 7.7 ns

VCC = 1.65 V to 1.95 V 2.0 3.9 5.8 ns

VCC = 2.3 V to 2.7 V 1.8 3.2 4.3 ns

VCC = 3.0 V to 3.6 V 1.7 3.0 3.9 ns

tdis disable time OE to Y; see Figure 9 [4]

VCC = 0.8 V - 32.7 - ns

VCC = 1.1 V to 1.3 V 3.4 5.4 7.9 ns

VCC = 1.4 V to 1.6 V 2.2 4.1 5.5 ns

VCC = 1.65 V to 1.95 V 2.2 4.2 5.6 ns

VCC = 2.3 V to 2.7 V 1.7 3.0 3.8 ns

VCC = 3.0 V to 3.6 V 2.1 3.8 4.8 ns

Tamb = 25 C; CL = 15 pF

tpd propagation delay A to Y; see Figure 8 [2]

VCC = 0.8 V - 27.4 - ns

VCC = 1.1 V to 1.3 V 3.6 7.2 14.1 ns

VCC = 1.4 V to 1.6 V 3.0 5.1 8.1 ns

VCC = 1.65 V to 1.95 V 2.2 4.3 6.3 ns

VCC = 2.3 V to 2.7 V 2.0 3.7 4.9 ns

VCC = 3.0 V to 3.6 V 2.0 3.5 4.4 ns

ten enable time OE to Y; see Figure 9 [3]

VCC = 0.8 V - 77.5 - ns

VCC = 1.1 V to 1.3 V 4.0 7.7 15.2 ns

VCC = 1.4 V to 1.6 V 3.0 5.3 8.4 ns

VCC = 1.65 V to 1.95 V 2.3 4.4 6.5 ns

VCC = 2.3 V to 2.7 V 2.1 3.6 5.0 ns

VCC = 3.0 V to 3.6 V 2.0 3.5 4.5 ns

Table 8. Dynamic characteristics …continu ed

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10

Symbol Parameter Conditions Min Typ [1] Max Unit

Product data sheet Rev. 6 — 15 August 2012 10 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

tdis disable time OE to Y; see Figure 9 [4]

VCC = 0.8 V - 60.8 - ns

VCC = 1.1 V to 1.3 V 4.3 6.5 9.2 ns

VCC = 1.4 V to 1.6 V 3.0 5.0 6.5 ns

VCC = 1.65 V to 1.95 V 3.0 5.3 6.6 ns

VCC = 2.3 V to 2.7 V 2.1 3.8 4.9 ns

VCC = 3.0 V to 3.6 V 2.9 5.0 6.2 ns

Tamb = 25 C; CL = 30 pF

tpd propagation delay A to Y; see Figure 8 [2]

VCC = 0.8 V - 37.4 - ns

VCC = 1.1 V to 1.3 V 4.8 9.5 19.0 ns

VCC = 1.4 V to 1.6 V 4.0 6.7 10.8 ns

VCC = 1.65 V to 1.95 V 2.9 5.6 8.4 ns

VCC = 2.3 V to 2.7 V 2.7 4.8 6.3 ns

VCC = 3.0 V to 3.6 V 2.7 4.6 5.8 ns

ten enable time OE to Y; see Figure 9 [3]

VCC = 0.8 V - 88.9 - ns

VCC = 1.1 V to 1.3 V 5.2 9.9 19.8 ns

VCC = 1.4 V to 1.6 V 4.0 6.8 10.8 ns

VCC = 1.65 V to 1.95 V 3.0 5.6 8.5 ns

VCC = 2.3 V to 2.7 V 2.7 4.8 6.5 ns

VCC = 3.0 V to 3.6 V 2.7 4.6 6.0 ns

tdis disable time OE to Y; see Figure 9 [4]

VCC = 0.8 V - 49.9 - ns

VCC = 1.1 V to 1.3 V 6.0 9.9 13.3 ns

VCC = 1.4 V to 1.6 V 4.4 7.7 9.6 ns

VCC = 1.65 V to 1.95 V 5.1 8.7 11.1 ns

VCC = 2.3 V to 2.7 V 3.6 6.2 7.4 ns

VCC = 3.0 V to 3.6 V 5.2 8.7 10.5 ns

Table 8. Dynamic characteristics …continu ed

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10

Symbol Parameter Conditions Min Typ [1] Max Unit

Product data sheet Rev. 6 — 15 August 2012 11 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

[1] All typical values are measured at nominal VCC.

[2] tpd is the same as tPLH and tPHL.

[3] ten is the same as tPZH and tPZL.

[4] tdis is the same as tPHZ and tPLZ.

[5] CPD is used to determine the dynamic power dissipation (PD in W).

PD=C

PD VCC2fiN+(CLVCC2fo) where:

fi= input frequency in MHz;

fo= output frequency in MHz;

CL= output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(CLVCC2fo) = sum of the outputs.

Tamb = 25 C

CPD power dissipation capacitance f = 1 MHz; VI= GND to VCC [5]

output enabled

VCC = 0.8 V - 2.7 - pF

VCC = 1.1 V to 1.3 V - 2.8 - pF

VCC = 1.4 V to 1.6 V - 2.9 - pF

VCC = 1.65 V to 1.95 V - 3.0 - pF

VCC = 2.3 V to 2.7 V - 3.6 - pF

VCC = 3.0 V to 3.6 V - 4.2 - pF

Table 8. Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10

Symbol Parameter Conditions Min Typ [1] Max Unit

Table 9. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10

Symbol Parameter Conditions 40 C to +85 C40 C to +125 CUnit

Min Max Min Max

CL = 5 pF

tpd propagation delay A to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 2.5 11.7 2.5 12.9 ns

VCC = 1.4 V to 1.6 V 2.0 7.3 2.0 8.1 ns

VCC = 1.65 V to 1.95 V 1.7 6.1 1.7 6.7 ns

VCC = 2.3 V to 2.7 V 1.4 4.3 1.4 4.9 ns

VCC = 3.0 V to 3.6 V 1.2 3.9 1.2 4.4 ns

ten enable time OE to Y; see Figure 9 [2]

VCC = 1.1 V to 1.3 V 2.9 13.9 2.9 15.4 ns

VCC = 1.4 V to 1.6 V 2.3 7.7 2.3 8.3 ns

VCC = 1.65 V to 1.95 V 2.0 6.2 2.0 6.8 ns

VCC = 2.3 V to 2.7 V 1.7 4.5 1.7 5.0 ns

VCC = 3.0 V to 3.6 V 1.7 3.5 1.7 3.9 ns

Product data sheet Rev. 6 — 15 August 2012 12 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

tdis disable time OE to Y; see Figure 9 [3]

VCC = 1.1 V to 1.3 V 2.7 7.3 2.7 8.2 ns

VCC = 1.4 V to 1.6 V 2.1 5.1 2.1 5.7 ns

VCC = 1.65 V to 1.95 V 2.0 5.0 2.0 5.7 ns

VCC = 2.3 V to 2.7 V 1.4 3.3 1.4 4.1 ns

VCC = 3.0 V to 3.6 V 1.7 3.4 1.7 3.9 ns

CL = 10 pF

tpd propagation delay A to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 3.0 13.8 3.0 15.2 ns

VCC = 1.4 V to 1.6 V 1.9 8.5 1.9 9.4 ns

VCC = 1.65 V to 1.95 V 1.7 6.8 1.7 7.6 ns

VCC = 2.3 V to 2.7 V 1.6 5.3 1.6 5.9 ns

VCC = 3.0 V to 3.6 V 1.6 4.6 1.6 5.2 ns

ten enable time OE to Y; see Figure 9 [2]

VCC = 1.1 V to 1.3 V 3.4 15.8 3.4 17.5 ns

VCC = 1.4 V to 1.6 V 2.2 8.6 2.2 9.4 ns

VCC = 1.65 V to 1.95 V 1.9 6.8 1.9 7.4 ns

VCC = 2.3 V to 2.7 V 1.7 5.3 1.7 5.9 ns

VCC = 3.0 V to 3.6 V 1.7 4.3 1.7 4.8 ns

tdis disable time OE to Y; see Figure 9 [3]

VCC = 1.1 V to 1.3 V 3.4 8.8 3.4 9.9 ns

VCC = 1.4 V to 1.6 V 2.2 6.2 2.2 7.1 ns

VCC = 1.65 V to 1.95 V 1.9 6.3 1.9 7.1 ns

VCC = 2.3 V to 2.7 V 1.7 4.5 1.7 5.1 ns

VCC = 3.0 V to 3.6 V 1.7 5.0 1.7 5.6 ns

CL = 15 pF

tpd propagation delay A to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 3.3 15.8 3.3 17.5 ns

VCC = 1.4 V to 1.6 V 2.5 9.8 2.5 10.9 ns

VCC = 1.65 V to 1.95 V 2.0 7.9 2.0 8.8 ns

VCC = 2.3 V to 2.7 V 1.8 6.0 1.8 6.7 ns

VCC = 3.0 V to 3.6 V 1.8 5.4 1.8 6.1 ns

ten enable time OE to Y; see Figure 9 [2]

VCC = 1.1 V to 1.3 V 3.7 17.6 3.7 19.6 ns

VCC = 1.4 V to 1.6 V 2.5 9.8 2.5 10.7 ns

VCC = 1.65 V to 1.95 V 2.1 7.7 2.1 8.5 ns

VCC = 2.3 V to 2.7 V 2.0 6.1 2.0 6.8 ns

VCC = 3.0 V to 3.6 V 1.9 4.9 1.9 5.5 ns

Table 9. Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10

Symbol Parameter Conditions 40 C to +85 C40 C to +125 CUnit

Min Max Min Max

Product data sheet Rev. 6 — 15 August 2012 13 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

[1] tpd is the same as tPLH and tPHL.

[2] ten is the same as tPZH and tPZL.

[3] tdis is the same as tPHZ and tPLZ.

tdis disable time OE to Y; see Figure 9 [3]

VCC = 1.1 V to 1.3 V 3.7 10.3 3.7 11.6 ns

VCC = 1.4 V to 1.6 V 2.5 7.4 2.5 8.4 ns

VCC = 1.65 V to 1.95 V 2.1 7.4 2.1 8.9 ns

VCC = 2.3 V to 2.7 V 2.0 5.1 2.0 6.4 ns

VCC = 3.0 V to 3.6 V 1.9 6.6 1.9 7.4 ns

CL = 30 pF

tpd propagation delay A to Y; see Figure 8 [1]

VCC = 1.1 V to 1.3 V 4.4 21.6 4.4 24.0 ns

VCC = 1.4 V to 1.6 V 3.0 13.0 3.0 14.5 ns

VCC = 1.65 V to 1.95 V 2.6 10.3 2.6 11.5 ns

VCC = 2.3 V to 2.7 V 2.5 7.8 2.5 8.7 ns

VCC = 3.0 V to 3.6 V 2.5 7.5 2.5 8.3 ns

ten enable time OE to Y; see Figure 9 [2]

VCC = 1.1 V to 1.3 V 4.8 22.8 4.8 25.3 ns

VCC = 1.4 V to 1.6 V 3.1 12.6 3.1 14.1 ns

VCC = 1.65 V to 1.95 V 2.8 10.2 2.8 11.3 ns

VCC = 2.3 V to 2.7 V 2.6 7.8 2.6 8.8 ns

VCC = 3.0 V to 3.6 V 2.6 6.9 2.6 7.7 ns

tdis disable time OE to Y; see Figure 9 [3]

VCC = 1.1 V to 1.3 V 4.8 14.8 4.8 16.5 ns

VCC = 1.4 V to 1.6 V 3.1 10.7 3.1 12.1 ns

VCC = 1.65 V to 1.95 V 2.8 12.4 2.8 13.8 ns

VCC = 2.3 V to 2.7 V 2.6 8.6 2.6 9.6 ns

VCC = 3.0 V to 3.6 V 2.6 10.8 2.6 13.1 ns

Table 9. Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10

Symbol Parameter Conditions 40 C to +85 C40 C to +125 CUnit

Min Max Min Max

Product data sheet Rev. 6 — 15 August 2012 14 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

12. Waveforms

Measurement points are given in Table 10.

Logic levels: VOL and VOH are typical output voltage drops that occur with the output load.

Fig 8. The data input (A) to output (Y) propagation delays

001aad070

A input

Y output

tPLH

tPHL

GND

Table 10. Measurement points

Supply voltage Output Input

VCC VMVMVItr = tf

0.8 V to 3.6 V 0.5  VCC 0.5  VCC VCC  3.0 ns

Measurement points are given in Table 11.

Logic levels: VOL and VOH are typical output voltage drops that occur with the output load.

Fig 9. Enable an d disable times

mna644

PLZ

PHZ

outputs

disabled outputs

enabled

outputs

enabled

output

LOW-to-OFF

OFF-to-LOW

output

HIGH-to-OFF

OFF-to-HIGH

OE input

GND

PZL

PZH

Product data sheet Rev. 6 — 15 August 2012 15 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

[1] For measuring enable and disable times RL = 5 k, for measuring propagation delays, setup and hold times and pulse width RL = 1 M.

Table 11. Measurement points

Supply voltage Input Output

VCC VMVMVXVY

0.8 V to 1.6 V 0.5  VCC 0.5  VCC VOL 0.1 V VOH 0.1 V

1.65 V to 2.7 V 0.5  VCC 0.5  VCC VOL 0.15 V VOH 0.15 V

3.0 V to 3.6 V 0.5  VCC 0.5  VCC VOL 0.3 V VOH 0.3 V

Test data is given in Table 12.

Definitions for test circuit:

RL = Load resistance.

CL = Load capacitance including jig and probe capacitance.

RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.

VEXT = External voltage for measuring switching times.

Fig 10. Test circuit for measuring switching times

001aac521

DUT

VIVO

EXT

5 kΩ

Table 12. Test data

Supply voltage Load VEXT

VCC CLRL [1] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ

0.8 V to 3.6 V 5 pF, 10 pF, 15 pF and 30 pF 5 k or 1 Mopen GND 2  VCC

Product data sheet Rev. 6 — 15 August 2012 16 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

13. Package outline

Fig 11. Package outline SOT353-1 (TSSOP5)

UNIT A1

max. A2A3bpLHELpwyv

ceD(1) E(1) Z(1) θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.1

01.0

0.8 0.30

0.15 0.25

0.08 2.25

1.85 1.35

1.15 0.65

1.3 2.25

2.0 0.60

0.15 7°

0°

0.1 0.10.30.425

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

0.46

0.21

SOT353-1 MO-203 SC-88A 00-09-01

03-02-19

0.15

(A3)

detail X

vMA

1.5 3 mm0

scale

TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1

1.1

Product data sheet Rev. 6 — 15 August 2012 17 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

Fig 12. Package outline SOT886 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT886 MO-252

sot886_po

04-07-22

12-01-05

Unit

mm max

nom

min

0.5 0.04 1.50

1.45

1.40

1.05

1.00

0.95

0.35

0.30

0.27

0.40

0.35

0.32

0.6

A(1)

Dimensions (mm are the original dimensions)

Notes

1. Including plating thickness.

2. Can be visible in some manufacturing processes.

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886

A1b

0.25

0.20

0.17

DEee

0.5

terminal 1

index area

0 1 2 mm

scale

(2)

Product data sheet Rev. 6 — 15 August 2012 18 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

Fig 13. Package outline SOT891 (XSON6)

terminal 1

index area

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT891

05-04-06

07-05-15

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

mm 0.20

0.12 1.05

0.95 0.35

0.27

max b E

1.05

0.95

Dee

0.40

0.32

0.350.55

max

0.5 0.04

6×

(1)

4×

(1)

Note

1. Can be visible in some manufacturing processes.

Product data sheet Rev. 6 — 15 August 2012 19 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

Fig 14. Package outline SOT1115 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1115

sot1115_po

10-04-02

10-04-07

Unit

mm max

nom

min

0.35 0.04 0.95

0.90

0.85

1.05

1.00

0.95 0.55 0.3 0.40

0.35

0.32

A(1)

Dimensions

Note

1. Including plating thickness.

2. Visible depending upon used manufacturing technology.

XSON6: extremely thin small outline package; no leads;

6 terminals; body 0.9 x 1.0 x 0.35 mm SOT1115

A1b

0.20

0.15

0.12

DEee

0.35

0.30

0.27

0 0.5 1 mm

scale

terminal 1

index area

(4×)(2)

e1e1

321

6 5 4

(6×)(2) A1A

Product data sheet Rev. 6 — 15 August 2012 20 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

Fig 15. Package outline SOT1202 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1202

sot1202_po

10-04-02

10-04-06

Unit

mm max

nom

min

0.35 0.04 1.05

1.00

0.95

1.05

1.00

0.95 0.55 0.35 0.40

0.35

0.32

A(1)

Dimensions

Note

1. Including plating thickness.

2. Visible depending upon used manufacturing technology.

XSON6: extremely thin small outline package; no leads;

6 terminals; body 1.0 x 1.0 x 0.35 mm SOT1202

A1b

0.20

0.15

0.12

DEee

0.35

0.30

0.27

0 0.5 1 mm

scale

terminal 1

index area

(4×)(2)

e1e1

123

6 5 4

(6×)(2)

Product data sheet Rev. 6 — 15 August 2012 21 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

Fig 16. Package outline SOT1226 (X2SON5)

References

Outline

version European

projection Issue date

IEC JEDEC EIAJ

SOT1226

sot1226_po

12-04-10

12-04-25

Unit

mm max

nom

min

0.35 0.85

0.80

0.75

0.04 0.30

0.25

0.20

0.85

0.80

0.75

0.27

0.22

0.17 0.05

A(1)

Dimensions

Note

1. Dimension A is including plating thickness.

2. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

SOT1226

A1A3

0.128

0.040

hEbe

0.48

kLv

0.1

0.05 0.05

scale

01 mm

terminal 1

index area

detail X

A1A3

terminal 1

index area

eAC B

vCw

0.20

0.27

0.22

0.17

X2SON5: plastic thermal enhanced extremely thin small outline package; no leads;

5 terminals; body 0.8 x 0.8 x 0.35 mm

Product data sheet Rev. 6 — 15 August 2012 22 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

14. Abbreviations

15. Revision history

Table 13. Abbreviations

Acronym Description

CDM Charged Device Model

DUT Device Under Test

ESD ElectroStatic Discharge

HBM Human Body Model

MM Machine Model

Table 14. Revision history

Document ID Release date Data sheet status Change notice Supersedes

74AUP1G125 v.6 20120815 Product data sheet - 74AUP1G125 v.5

Modifications: •Errata in general description corrected

74AUP1G125 v.5 20120731 Product data sheet - 74AUP1G125 v.4

Modifications: •Added type number 74AUP1G125GX (SOT1226)

•Package outline drawing of SOT886 (Figure 12) modified.

74AUP1G125 v.4 20111129 Product data sheet - 74AUP1G125 v.3

74AUP1G125 v.3 20100901 Product data sheet - 74AUP1G125 v.2

74AUP1G125 v.2 20060630 Product data sheet - 74AUP1G125 v.1

74AUP1G125 v.1 20050718 Product data sheet - -

Product data sheet Rev. 6 — 15 August 2012 23 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

16. Legal information

16.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

16.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liabili ty towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Te rms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by cust omer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the prod uct specification.

Product data sheet Rev. 6 — 15 August 2012 24 of 25

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims result ing from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

16.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

17. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors 74AUP1G125

Low-power buffer/line driver; 3-state

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 August 2012

Document identifier: 74AUP1G125

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

18. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Functional description . . . . . . . . . . . . . . . . . . . 4

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

9 Recommended operating conditions. . . . . . . . 4

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8

12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16

14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 22

15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 22

16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 23

16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23

16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 23

16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 24

17 Contact information. . . . . . . . . . . . . . . . . . . . . 24

18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25