Vishay Siliconix
SiZ728DT
New Product
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 25 V (D-S) MOSFETs
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
•100 % R
g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• System Power
- Notebook
- Server
• POL
• Synchronous Buck Converter
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A) Qg (Typ.)
Channel-1 25 0.0077 at VGS = 10 V 16a
8.1 nC
0.0110 at VGS = 4.5 V 16a
Channel-2 25 0.0035 at VGS = 10 V 35a
20.5 nC
0.0048 at VGS = 4.5 V 35a
Ordering Information:
SiZ728DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
1
G
2
S
2
S
2
D
1
D
1
1
6
5
4
2
3
3.73 mm
6 mm
PowerPAIR
®
6 x 3.7
D1
S1/D2
Pin 1
(Pin 7)
D
1
S
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
G
1
S
1
/D
2
G
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Channel-1 Channel-2 Unit
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
16a35a
A
TC = 70 °C 16a35a
TA = 25 °C 16a, b, c 28.8b, c
TA = 70 °C 14.2b, c 23b, c
Pulsed Drain Current (t = 300 µs) IDM 70 100
Continuous Source Drain Diode Current TC = 25 °C IS
16a35a
TA = 25 °C 3.2b, c 3.8b, c
Single Pulse Avalanche Current L = 0.1 mH IAS 18 30
Single Pulse Avalanche Energy EAS 16 45 mJ
Maximum Power Dissipation
TC = 25 °C
PD
27 48
W
TC = 70 °C 17 31
TA = 25 °C 3.9b, c 4.6b, c
TA = 70 °C 2.5b, c 3b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel-1 Channel-2
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambientb, f t 10 s RthJA 24 32 20 27 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 3.5 4.6 2 2.6
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Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS
VGS = 0 V, ID = 250 µA Ch-1 25 V
VGS = 0 V, ID = 250 µA Ch-2 25
VDS Temperature Coefficient VDS/TJ
ID = 250 µA Ch-1 34
mV/°C
ID = 250 µA Ch-2 25
VGS(th) Temperature Coefficient VGS(th)/TJ
ID = 250 µA Ch-1 - 5
ID = 250 µA Ch-2 - 5.4
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = 250 µA Ch-1 1 2.2 V
VDS = VGS, ID = 250 µA Ch-2 1 2.2
Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 ± 100
nA
Ch-2 ± 100
Zero Gate Voltage Drain Current IDSS
VDS = 25 V, VGS = 0 V Ch-1 1
µA
VDS = 25 V, VGS = 0 V Ch-2 1
VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-1 5
VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-2 5
On-State Drain CurrentbID(on) VDS 5 V, VGS = 10 V Ch-1 15 A
VDS 5 V, VGS = 10 V Ch-2 20
Drain-Source On-State ResistancebRDS(on)
VGS = 10 V, ID = 18 A Ch-1 0.0063 0.0077
VGS = 10 V, ID = 20 A Ch-2 0.0029 0.0035
VGS = 4.5 V, ID = 15 A Ch-1 0.0088 0.0110
VGS = 4.5 V, ID = 20 A Ch-2 0.0039 0.0048
Forward Transconductancebgfs
VDS = 15 V, ID =18 A Ch-1 37 S
VDS = 15 V, ID = 20 A Ch-2 80
Dynamica
Input Capacitance Ciss Channel-1
VDS = 12.5 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 12.5 V, VGS = 0 V, f = 1 MHz
Ch-1 890
pF
Ch-2 2360
Output Capacitance Coss
Ch-1 230
Ch-2 580
Reverse Transfer Capacitance Crss Ch-1 105
Ch-2 260
Total Gate Charge Qg
VDS = 12.5 V, VGS = 10 V, ID = 15 A Ch-1 17 26
nC
VDS = 12.5 V, VGS = 10 V, ID = 20 A Ch-2 42.5 64
Channel-1
VDS = 12.5 V, VGS = 4.5 V, ID = 15 A
Channel-2
VDS = 12.5 V, VGS = 4.5 V, ID = 20 A
Ch-1 8.1 13
Ch-2 20.5 17
Gate-Source Charge Qgs
Ch-1 3
Ch-2 7.7
Gate-Drain Charge Qgd Ch-1 2.5
Ch-2 6.4
Gate Resistance Rgf = 1 MHz Ch-1 0.2 1 2
Ch-2 0.2 0.8 1.6
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
3
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Dynamica
Tu r n - On D e l ay T i m e td(on) Channel-1
VDD = 12.5 V, RL = 1.25
ID 10 A, VGEN = 4.5 V, Rg = 1
Channel-2
VDD = 12.5 V, RL = 1.25
ID 10 A, VGEN = 4.5 V, Rg = 1
Ch-1 12 25
ns
Ch-2 20 40
Rise Time tr
Ch-1 15 30
Ch-2 18 35
Turn-Off Delay Time td(off) Ch-1 15 30
Ch-2 30 60
Fall Time tf
Ch-1 10 20
Ch-2 10 20
Tu r n - On D e l ay T i m e td(on) Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Ch-1 7 15
Ch-2 10 20
Rise Time tr
Ch-1 12 25
Ch-2 12 25
Turn-Off Delay Time td(off) Ch-1 25 50
Ch-2 30 60
Fall Time tf
Ch-1 10 20
Ch-2 10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C Ch-1 16
A
Ch-2 35
Pulse Diode Forward CurrentaISM
Ch-1 70
Ch-2 100
Body Diode Voltage VSD
IS = 10 A, VGS = 0 V Ch-1 0.8 1.2 V
IS = 10 A, VGS = 0 V Ch-2 0.78 1.2
Body Diode Reverse Recovery Time trr
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Ch-1 12 25 ns
Ch-2 25 50
Body Diode Reverse Recovery Charge Qrr
Ch-1 4 8 nC
Ch-2 15 30
Reverse Recovery Fall Time ta
Ch-1 6.6
ns
Ch-2 12.5
Reverse Recovery Rise Time tb
Ch-1 5.5
Ch-2 12.5
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Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 4 V
VGS = 10 V thru 5 V
VGS = 3 V
0.0040
0.0060
0.0080
0.0100
0.0120
0.0140
0.0160
0 10 20 30 40 50 60 70
RDS(on) - On-Resistance (Ω)
ID-Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
2
4
6
8
10
0 3 6 9 12 15 18
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VDS = 24 V
VDS = 7.5 V
ID= 20 A
VDS = 15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
T
C
= 125 °C
TC= - 55 °C
T= 25 C°
C
0
200
400
600
800
1000
1200
0 5 10 15 20 25
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
RDS(on) -On-Resistance
(Normalized)
TJ- Junction Temperature (°C)
ID= 18 A
VGS = 4.5 V
VGS = 10 V
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
5
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
VGS(th) (V)
TJ-Temperature (°C)
ID= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0
0.005
0.010
0.015
0.020
0.025
0.030
0246810
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ= 125 °C
TJ= 25 °C
ID= 18 A
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.1 1 10 100
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
10 s
100 μs
100 ms
Limited by RDS(on)*
1 ms
T
Single Pulse
A= 25 °C
BVDSS Limited
10 ms
1 s
DC
www.vishay.com
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Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
50
60
0 25 50 75 100 125 150
ID- Drain Current (A)
TC- Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
5
10
15
20
25
30
25 50 75 100 125 150
Power (W)
TC- Case Temperature (°C)
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
7
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=67 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
1
0.0001 0.001 0.01 0.1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
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Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0.0 0.5 1.0 1.5 2.0
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 4 V
VGS = 3 V
0.0020
0.0025
0.0030
0.0035
0.0040
0.0045
0.0050
0 20 40 60 80 100
RDS(on) - On-Resistance (Ω)
ID-Drain Current (A)
VGS = 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
ID= 20 A
VDS = 24 V
VDS = 7.5 V
VDS = 15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC= - 55 °C
TC= 125 °C
TC= 25 °C
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20 25
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
RDS(on) -On-Resistance
(Normalized)
TJ- Junction Temperature (°C)
ID= 20 A
VGS = 4.5 V, 10 V
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
9
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
VGS(th) (V)
TJ-Temperature (°C)
ID= 250 μA
On-Resistance vs. Gate-to-Source
Single Pulse Power
0.000
0.002
0.004
0.006
0.008
0.010
0246810
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ= 125 °C
TJ= 25 °C
ID= 20 A
0
10
20
30
40
50
0.01 0.1 1 10 100 1000
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
10 s
100 μs
100 ms
Limited by RDS(on)*
1 ms
T
Single Pulse
A= 25 °C
BVDSS Limited
10 ms
1 s
DC
www.vishay.com
10
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
20
40
60
80
100
0 25 50 75 100 125 150
ID- Drain Current (A)
TC- Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
10
20
30
40
50
25 50 75 100 125 150
Power (W)
TC- Case Temperature (°C)
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
11
Vishay Siliconix
SiZ728DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67694.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=65 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
1
0.0001 0.001 0.01 0.1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Document Number: 69028 www.vishay.com
17-Nov-08 1
Package Information
Vishay Siliconix
PowerPAIRTM 6 x 3.7 CASE OUTLINE
A1
E
Pin 1
b1
ZZ
Pin 3
Pin 2
Pin 6 Pin 5 Pin 4
A
K1
b
e
D1
E2
K2
L
K
K2
D1
E1
BACK SIDE VIEW
D
0.10 C
2X
0.10 C
0.08C
Pin #1 Ident
(Optional)
A
0.10 C
2X
c
C
Pin 4 Pin 5 Pin 6
Pin 3 Pin 2 Pin 1
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.70 0.75 0.80 0.028 0.030 0.032
A1 0.00 - 0.05 0.000 - 0.002
b 0.46 0.51 0.56 0.018 0.020 0.022
b1 0.20 0.25 0.38 0.008 0.010 0.015
C 0.18 0.20 0.23 0.007 0.008 0.009
D 3.65 3.73 3.81 0.144 0.147 0.150
D1 2.41 2.53 2.65 0.095 0.100 0.104
E 5.92 6.00 6.08 0.233 0.236 0.239
E1 2.62 2.67 2.72 0.103 0.105 0.107
E2 0.87 0.92 0.97 0.034 0.036 0.038
e 1.27 BSC 0.05 BSC
K 0.45 TYP. 0.018 TYP.
K1 0.66 TYP. 0.026 TYP.
K2 0.60 TYP. 0.024 TYP.
L 0.38 0.43 0.48 0.015 0.017 0.019
ECN: S-82772-Rev. B, 17-Nov-08
DWG: 5979
Document Number: 65278 www.vishay.com
Revision: 04-Aug-09 1
PAD Pattern
Vishay Siliconix
RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7
0.0170
(0.432)
Recommended PAD for PowerPAIR 6 x 3.7
Dimensions in inches (mm)
Keep-out 0.3520 (8.94) x 0.4390 (11.151)
0.3520
(8.941)
0.0220
(0.559)
0, 0.11
0.0190
(0.483)
0.1040
(2.642)
0, 0.03
0, 0 0.4390
(11.151)
0.1070
(2.718)
0.0220
(0.559)
0.0170
(0.432)
0.0380
(0.965)
0, - 0.0645
- 0.05, - 0.11
0, - 0.11
0.0500
(1.27)
1
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
