IGBT MODULE Spec.No.IGBT-SP-10007 R0 P1 MBM400E25E Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70K, N>30,000cycles) Isolated heat sink (terminal to base). E1 CIRCUIT DIAGRAM C2 E1 C2 G1 G2 E2(C1) C1 E2 Weight: 900(g) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Unit Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m MBM400E25E V V 2,500 20 o 400 (Tc=100 C) A 800 400 A 800 o C -40 ~ +150 o C -40 ~ +125 VRMS 4,000(AC 1 minute) 2/15 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Symbol Unit I CES mA IGES VCE(sat) VGE(TO) Cies Rge tr ton tf toff VFM nA V V nF s V Min. Typ. Max. Test Conditions -500 1.6 4.5 0.9 2.0 0.8 2.8 1.8 7 2.3 6.0 67 4.8 1.5 2.6 1.4 3.8 2.2 4 20 +500 3.0 7.5 2.1 3.2 2.0 4.8 2.8 VCE=2,500V, VGE=0V, Tj=25 C o VCE=2,500V, VGE=0V, Tj=138 C o VGE=20V, VCE=0V, Tj=25 C o IC=400A, VGE=14.7V, Tj=138 C (chip level) o VCE=15V, IC=40mA, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C VCC=1,300V, Ic=150A L=120nH RG(ON/OFF)=15/4.7 (3) o VGE=14.7V, Tj=138 C o o IF=400A, VGE=0V, Tj=138 C (chip level) Vcc=1,300V, IF=150A, L=120nH Reverse Recovery Time trr s 0.3 0.6 0.9 o Tj=138 C Turn On Loss Eon(10%) J/P 0.25 0.28 VCC=1,300V, Ic= IF=150A, L=120nH (3) Turn Off Loss Eoff(10%) J/P 0.23 0.30 RG(ON/OFF)= 15/4.7 o Reverse Recovery Loss Err(10%) J/P 0.15 0.19 VGE=14.7V, Tj=138 C IGBT Rth(j-c) 0.0255 Thermal Impedance K/W Junction to case (par arm) FWD Rth(j-c) 0.051 Contact Thermal Impedance Rth(c-f) K/W 0.018 Case to fin (par arm) Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-10007 R0 P2 MBM400E25E HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. 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