© 2002 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 24 A
IDM TC= 25°C, Pulse Width Limited by TJM 96 A
IATC= 25°C24A
EAS TC= 25°C3J
dV/dt IS≤ IDM, di/dt < 100A/μs, VDD ≤ VDSS 10 V/ns
TJ ≤ 150°C, RG = 2Ω
PDTC= 25°C 600 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, RMS t = 1 minute 2500 V~
IISOL ≤ 1mA t = 1 second 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 100 μA
TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 12A, Note 1 390 mΩ
IXFN24N100F
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
DS98875A(12/02)
miniBLOC, SOT-227
E153432
G
D
S
S
G = Gate D = Drain
S = Source
VDSS = 1000V
ID25 = 24A
RDS(on) ≤≤
≤≤
≤ 390mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
Features
zRF capable MOSFETs
zDouble metal process for low gate
resistance
zAvalanche rated
zLow package inductance
zFast intrinsic rectifier
Applications
zDC-DC converters
zSwitched-mode and resonant-mode
power supplies, >500kHz switching
zDC choppers
zPulse generation
zLaser drivers
Advantages
zEasy to mount
zSpace savings
zHigh power density
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN24N100F
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 12A, Note 1 16 24 S
Ciss 6600 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 760 pF
Crss 230 pF
td(on) 22 ns
tr 18 ns
td(off) 52 ns
tf 11 ns
Qg(on) 195 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 12A 40 nC
Qgd 100 nC
RthJC 0.21 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 24 A
ISM Repetitive, Pulse Width Limited by TJM 96 A
VSD IF = 24A, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.4 μC
IRM 10 A
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
RG = 1Ω (External)
IF = 24A, VGS = 0V
-di/dt = 100A/μs
VR = 100V
