DATA SH EET
Product specification
Supersedes data of 1997 Dec 17 2003 Sep 02
DISCRETE SEMICONDUCTORS
BLF245
VHF power MOS transistor
M3D065
2003 Sep 02 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
FEATURES
•High power gain
•Low noise figure
•Easy power control
•Good thermal stability
•Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
PINNING - SOT123A
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
l
fpage
1
23
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a class-B test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 175 28 30 >13 >50
2003 Sep 02 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage VGS =0 −65 V
VGS gate-source voltage VDS =0 −±20 V
IDdrain current (DC) −6A
P
tot total power dissipation Tmb ≤25 °C−68 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base Tmb =25°C; Ptot = 68 W 2.6 K/W
Rth mb-h thermal resistance from mounting base to heatsink Tmb =25°C; Ptot = 68 W 0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDSon.
(2) Tmb =25°C.
handbook, halfpage
10−1102
1
10
110
I
D
(A)
VDS (V)
(1)
MRA921
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0 40 80 160
100
80
40
20
0
60
120
MGP167
Ptot
(W)
Th (°C)
(1)
(2)
2003 Sep 02 4
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID=10mA 65 −− V
I
DSS drain-source leakage current VGS = 0; VDS =28V −−2mA
I
GSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage ID= 10 mA; VDS =10V 2 −4.5 V
∆VGS gate-source voltage difference of
matched devices ID= 0 mA; VDS =10V −−100 mV
gfs forward transconductance ID= 1.5 A; VDS = 10 V 1.2 1.9 −S
RDSon drain-source on-state resistance ID= 1.5 A; VGS =10V −0.4 0.75 Ω
IDSX on-state drain current VGS = 10 V; VDS = 10 V −10 −A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −125 −pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −75 −pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −7−pF
F noise figure input and output power matched for:
ID= 1 A; VDS = 28 V; PL=30W;
R1=1kΩ; Th=25°C; f = 175 MHz;
see Fig.14
−2−dB
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
2003 Sep 02 5
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Fig.4 Temperature coefficient of gate-source
voltageasafunctionofdraincurrent;typical
values.
VDS = 10 V; valid for Tj=25to125°C.
handbook, halfpage
6
−6
2
T.C.
(mV/K)
ID (mA)
−2
4
0
−4
MGP168
10 102103104
Fig.5 Drain current as a function of gate-source
voltage; typical values.
VDS =10V.
handbook, halfpage
020
12
0
4
8
10
MGP169
ID
(A)
VGS (V)
Tj = 25 °C
125 °C
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
VGS = 10 V; ID= 1.5 A.
handbook, halfpage
0
0.8
0.6
0.4
0
0.2
40 80 160
120
MGP170
RDSon
(Ω)
Tj (°C)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
240
40
200
30
160
120
80
MGP171
C
(pF)
VDS (V)
Cis
Cos
2003 Sep 02 6
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
10
20
01020
C
rs
(pF)
VDS (V) 30
MRA920
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ.
RF performance in CW operation in a common source class-B test circuit.
Note
1. R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: Th=25°C; Rth mb-h = 0.3 K/W; at rated load power.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%) Zi
(Ω)(1) ZL
(Ω)
CW, class-B 175 28 50 30 >13
typ. 15.5 < 50
typ. 67 2.0 −j2.7 3.9 +j4.4
175 12.5 50 12 typ. 12 typ. 66 2.4 −j2.5 3.8 +j1.3
2003 Sep 02 7
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Fig.9 Power gain and efficiency as functions of
load power; typical values.
Class-B operation; VDS = 28 V; IDQ =50mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
10 20 30 50
20
0
10
100
0
50
40
MGP172
Gp
(dB)
PL (W)
ηD
(%)
Gp
ηD
Fig.10 Load power as a function of input power;
typical values.
Class-B operation; VDS = 28 V; IDQ =50mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
60
0 0.6 2.4
10
MEA736
1.2
PL
(W)
PIN (W)
20
30
40
50
1.8
Fig.11 Power gain and efficiency as functions of
load power; typical values.
Class-B operation; VDS = 12.5 V; IDQ =50mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
01020
20
0
10
100
0
50
MGP173
Gp
(dB)
PL (W)
ηD
(%)
ηD
Gp
Fig.12 Load power as a function of input power;
typical values.
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
20
0 0.6 2.4
0
MEA737
1.2 PIN (W)
PL
(W)
10
1.8
2003 Sep 02 8
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Fig.13 Test circuit for class-B operation.
f = 175 MHz.
handbook, full pagewidth
MGP174
50 Ω
input
C1
C3
C4
C5
L1 L2 D.U.T. L3 L6
L4
R1
R2
Zi
C2
C10
C9
+VGG +VDD
C8
C7
L5
R3
C6
50 Ω
output
2003 Sep 02 9
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
List of components class-B test circuit (see Fig.14)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr= 4.5),
thickness 1⁄16 inch.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 film dielectric trimmer 4 to 40 pF 2222 809 07008
C2, C8 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3 multilayer ceramic chip capacitor 100 pF 2222 854 13101
C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5 ceramic capacitor 100 pF 2222 680 10101
C7 multilayer ceramic chip capacitor; note 1 18 pF
C9 multilayer ceramic chip capacitor; note 1 27 pF
C10 multilayer ceramic chip capacitor; note 1 24 pF
L1 3 turns enamelled 0.5 mm copper wire 13.5 nH length 3.5 mm
int. dia. 2 mm
leads 2 ×2mm
L2, L3 stripline; note 2 30 Ω10 ×6mm
L4 6 turns enamelled 1.5 mm copper wire 98 nH length 12.5 mm
int. dia. 5 mm
leads 2 ×2mm
L5 grade 3B Ferroxcube RF choke 4312 020 36640
L6 2 turns enamelled 1.5 mm copper wire 24.5 nH length 4 mm
int. dia. 5 mm
leads 2 ×2mm
R1 metal film resistor 1 kΩ
R2 metal film resistor 1 MΩ
R3 metal film resistor 10 Ω
2003 Sep 02 10
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Fig.14 Component layout for 175 MHz class-B test circuit.
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board; the other side is unetched copper and serves as an earth. Earth
connections are made by means of fixing screws, hollow rivets and copper straps under the sources and around the edges, to provide a direct contact
between the copper on the component side and the ground plane.
handbook, full pagewidth
MGP175
copper straps
copper straps
copper strap
rivets
C1 C2
C3
+VGG +VDD
C4
L1 L2 L3
L4
L6
C5
C6
C7 C9
C10
C8
L5
R3
R2
R1
135
72
2003 Sep 02 11
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Fig.15 Input impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS = 28 V; IDQ =50mA;
P
L= 30 W; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
20 40 120
40
30
10
0
20
60 80 100
MGP177
Zi
(Ω)
−xi
f (MHz)
ri
Fig.16 Load impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS = 28 V; IDQ =50mA;
P
L= 30 W; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
20 40 120
16
12
4
0
8
60 80 100
MGP178
ZL
(Ω)
RL
f (MHz)
XL
Fig.17 Definition of MOS impedance.
handbook, halfpage
MBA379
ZiZL
Fig.18 Power gain as a function of frequency;
typical values.
Class-B operation; VDS = 28 V; IDQ =50mA;
P
L= 30 W; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
20 40 120
40
30
10
0
20
60 80 100
MGP179
Gp
(dB)
f (MHz)
2003 Sep 02 12
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
BLF245 scattering parameters
VDS = 12.5 V; ID= 50 mA; note 1
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.91 −48.3 25.72 147.1 0.03 57.9 0.92 −47.8
10 0.80 −81.4 19.43 125.8 0.05 36.8 0.81 −81.3
20 0.71 −116.7 11.79 102.4 0.06 15.0 0.71 −115.5
30 0.68 −132.3 8.04 89.7 0.06 3.3 0.69 −131.1
40 0.69 −140.3 5.97 80.8 0.06 −4.4 0.69 −139.0
50 0.71 −145.2 4.67 73.6 0.06 −10.2 0.71 −143.8
60 0.73 −148.6 3.76 67.5 0.05 −14.8 0.73 −147.2
70 0.75 −151.1 3.10 62.4 0.05 −18.4 0.75 −149.9
80 0.77 −153.1 2.61 57.9 0.05 −21.3 0.77 −152.1
90 0.79 −155.1 2.24 53.7 0.04 −23.8 0.79 −154.2
100 0.81 −157.3 1.94 49.8 0.04 −25.9 0.81 −156.1
125 0.84 −161.9 1.39 41.2 0.03 −28.0 0.85 −160.1
150 0.87 −165.0 1.04 35.4 0.02 −23.3 0.88 −163.4
175 0.91 −167.9 0.81 30.8 0.01 −8.4 0.91 −166.3
200 0.92 −171.0 0.65 26.6 0.01 22.4 0.92 −168.9
250 0.94 −175.5 0.44 21.6 0.02 72.1 0.95 −173.3
300 0.95 −179.8 0.32 19.2 0.03 83.0 0.96 −176.8
350 0.96 176.9 0.24 19.7 0.04 86.1 0.97 −179.8
400 0.96 173.5 0.19 22.1 0.05 86.1 0.97 177.5
450 0.97 170.6 0.16 26.1 0.06 86.2 0.97 174.9
500 0.97 167.8 0.14 31.6 0.08 84.7 0.98 172.6
600 0.96 162.4 0.13 43.5 0.10 82.6 0.98 168.4
700 0.96 157.2 0.13 52.9 0.12 80.0 0.97 164.4
800 0.94 152.4 0.14 58.9 0.13 77.9 0.97 160.6
900 0.95 147.8 0.16 63.1 0.15 74.4 0.95 157.1
1000 0.95 142.7 0.18 68.2 1.70 40.5 3.52 46.0
2003 Sep 02 13
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
BLF245 scattering parameters
VDS = 28 V; ID= 50 mA; note 1
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.co/.markets/communications/wirelesscommunication/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.95 −40.5 27.84 152.9 0.02 63.8 0.93 −35.8
10 0.86 −71.3 22.60 133.3 0.04 44.4 0.83 −64.1
20 0.77 −108.6 14.77 109.1 0.05 21.7 0.69 −97.8
30 0.73 −126.8 10.37 95.5 0.05 9.1 0.65 −115.5
40 0.73 −136.8 7.81 86.2 0.05 1.0 0.64 −125.2
50 0.74 −142.9 6.17 78.8 0.05 −5.0 0.65 −131.3
60 0.75 −147.1 5.01 72.7 0.05 −9.6 0.67 −135.7
70 0.76 −150.0 4.17 67.5 0.05 −13.3 0.69 −139.1
80 0.78 −152.3 3.54 63.0 0.04 −16.3 0.72 −142.0
90 0.80 −154.5 3.06 58.8 0.04 −18.8 0.74 −144.6
100 0.81 −156.8 2.66 54.7 0.04 −20.9 0.76 −146.9
125 0.84 −161.5 1.93 46.0 0.03 −23.2 0.81 −152.0
150 0.87 −164.5 1.46 39.8 0.02 −18.9 0.84 −156.1
175 0.90 −167.4 1.15 34.7 0.01 −5.0 0.87 −159.7
200 0.91 −170.5 0.93 30.1 0.01 23.3 0.89 −162.9
250 0.93 −175.0 0.63 23.9 0.02 72.9 0.93 −168.1
300 0.95 −179.3 0.46 20.1 0.03 84.5 0.94 −172.4
350 0.96 177.3 0.35 18.8 0.04 87.7 0.96 −175.9
400 0.96 173.9 0.27 19.1 0.05 87.6 0.96 −179.1
450 0.97 171.0 0.22 20.9 0.06 87.6 0.97 178.1
500 0.96 168.1 0.19 24.2 0.07 86.0 0.97 175.5
600 0.96 162.7 0.16 34.0 0.10 83.7 0.97 170.8
700 0.96 157.5 0.15 43.8 0.11 81.1 0.97 166.5
800 0.94 152.4 0.15 51.6 0.13 78.8 0.97 162.5
900 0.95 148.1 0.16 57.8 0.15 75.2 0.95 158.8
1000 0.95 142.9 0.18 64.3 1.92 53.7 4.01 59.9
2003 Sep 02 14
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
99-03-29
IEC JEDEC EIAJ
SOT123A
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
1
2
43
U
3
U
2
H
Hb
Q
D
D
1
U
1
q
A
F
c
p
B
C
A
w
1
MM
A
M
B
α
UNIT A
mm
Db
5.82
5.56 0.18
0.10 9.73
9.47 9.78
9.42 20.71
19.93 3.33
3.04 6.48
6.22
7.47
6.37
cD1U2U3
9.78
9.39 0.510.25
w2
w1
45°
αU1
24.87
24.64
Q
4.63
4.11
q
18.42
F
2.72
2.31
inches 0.229
0.219 0.007
0.004 0.383
0.373 0.385
0.371 0.815
0.785 0.131
0.120 0.255
0.245
0.294
0.251 0.385
0.370 0.0200.010
0.980
0.970
0.182
0.162 0.725
0.107
0.091
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w2C
M M
2003 Sep 02 15
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/04/pp16 Date of release: 2003 Sep 02 Document order number: 9397 750 11585
