Type 2N4957
Geometry 0006
Polarity PNP
Qual Level: JAN - JANS
Data Sheet No. 2N4957
Generic Part Number:
2N4957
REF: MIL-PRF-19500/426
Features:
• Small signal RF silicon transistor
designed for high-gain, low-noise
applications.
• Housed in a TO-72 case.
• Also available in chip form using
the 0006 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/426 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 30 V
Collector-Base Voltage VCBO 30 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current, Continuous IC30 A
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
TO-72
Data Sheet No. 2N4957
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 100 µA, I
E
= 0
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
Emitter-Base Breakdown Voltage
I
E
= 100 µA, I
C
= 0
Collector-Base Cutoff Current
V
CB
= 20 V, I
E
0, T
C
= +25
o
C
Collector-Base Cutoff Current
VCB = 20 V, IE 0, TC = +150
o
C
---
V(BR)EBO 3.0 --- V
Electrical Characteristics
TC = 25oC unless otherwise specified
V
V
V(BR)CBO 30 ---
V(BR)CEO 30
100 µA
ICBO1 --- 100 na
ICBO2 ---
ON Characteristics
Symbol
Min
Max
Unit
DC Current Gain
I
C
= 0.5 mA, V
CE
= 10 V
h
FE1
15
---
---
I
C
= 2.0 mA, V
CE
= 10 V
h
FE2
20
---
---
I
C
= 5.0 mA, V
CE
= 10 V
h
FE3
30
165
---
I
C
= 5.0 mA, V
CE
= 10 V, T
A
= -55
o
C
h
FE4
10
---
---
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IE = 2.0 mA, f = 100 MHz
Collector to Base Feedback Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Collector to Base Time Constant
VCB = 10 V, IE = 2.0 mA, f = 63.6 MHz
Common Emitter Small Signal Power Gain
VCE = 10 V, IC = 2.0 mA, f = 450 MHz
rb'CC1.0 8.0 ps
pF
Ccb --- 0.8
---
|hfe|12 36
GPE 17 25 dB
