UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R208-010,A
1.5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor,
designed for 1.5V and 3V strobe applications.
FEATURES
*In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
*The charge time is approximately 1 second faster than
that of germanium transistors.
*Less power dissipation because of lwo
Collector-to-Emitter Voltage VCE(sat), permitting more
flashes of light to be emitted.
*Large current capacity and highly resistant to break-down.
*Excellent linearity of hFE in the region from low current to
high current.
SOT-89
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEX 20 V
Collector-Emitter Voltage VCEO 10 V
Emitter-Base Voltage VEBO 6 V
Collector Dissipation PD 1 W
Collector Current(DC) Ic 3 A
Collector Current(PULSE) Icp 5 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: PULSE CONDITION -> 100 ms single pulse
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Voltage VCBO IC=10uA, IE=0 30 V
Collector-Emitter Voltage VCEX IC=1mA, VBE=3V 20 V
Collector-Emitter Voltage VCEO IC=1mA, RBE=∞ 10 V
Emitter-Base Voltage VEBO IE=10uA, IC=0 6 V
Base-Emitter Voltage VBE VCE=-1V,IC=-2A 0.83 1.5 V
Collector Cut-Off Current ICBO VCB=20V,IE=0 1 µA
Emitter Cut-Off Current IEBO VEB=4V,Ic=0 1 µA
DC Current Gain hFE VCE=2V, Ic=3A (pulse) 140 210 400
Collector-Emitter Saturation Voltage VCE(sat) Ic=3A,IB=60mA (pulse) 0.3 0.4 V
Current Gain Bandwidth Product fT VCE=10V, Ic=50mA 200 MHz
Output Capacitance Cob VCB=10V,f=1MHz 30 pF
Pulse: 1mS