Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
EPITAXIAL SILICON POWER TRANSISTORS
NPN PNP
TO126
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL BD175 BD177 UNIT
BD176 BD178
Collector -Emitter Voltage VCEO 45 60 V
Collector -Base Voltage V
45 60 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC3.0 A
Collector Peak Current ICM 7.0 A
Power Dissipation @ Ta=25ºC PD 1.25 W
Power Dissipation @ Tc=25ºC PD30 W
Operating and Storage Junction
Temperature Range Tj, Tstg - 65 to +150 ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air Rth (j-a) ºC/W
Junction to Case Rth (j-c) ºC/W
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector Cut off Current I
V
=45V
I
=0 BD175/76 100 µA
V
=60V
I
=0 BD177/78 100 µA
V
=80V
I
=0 BD179/80 100 µA
Emitter Cut off Current I
V
=5V, I
=0 1.0 mA
Collector Emitter Sustaining Voltage *V
I
=100mA, I
=0 BD175/76 45 V
BD177/78 60 V
BD179/80 80 V
Collector Emitter Saturation Voltage *VCE (sat) IC=1A, IB=0.1A 0.8 V
Base Emitter on Voltage *VBE (on) IC=1A, VCE=2V 1.3 V
DC Current Gain *h
I
=150mA, V
=2V 40
I
=1A, V
=2V 15
*h
Group I
=150mA, V
=2V - 6 40 100
- 10 63 160
Only BD175/76/79 - 16 100 250
Transition Frequency fTIC=250mA, VCE=10V 3.0 ΜΗz
*Pulse test:- Pulse width=300µµs, Duty cycle=1.5%
100
4.16
BD179
80
80
BD180
IS/ISO 9002
C
E
Continental Device India Limited Data Sheet Page 1 of 3