Nov 2008, Revision C
Page 1
TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-523 SURFACE MOUNT
Very Small Outline Fl at Lead Plastic Package
Schottky Barrier Diode
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature +125 °C
VRRM Repetitive Peak Reverse Voltage 30 V
VR Maximum DC Blocking Voltage 30 V
IF(AV) Average Forward Rectified Current 200 mA
IFSM Peak Forward Surge Current 4 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Low Forward Voltage Drop
Flat Lead SOD-523 Small Outline Plastic Package
Extremely Small SOD-523 Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE MARKING CODES:
Device Type Device Marking
BAT42XV2 6B
BAT43XV2 7B
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=100µA 30 Volts
IR Reverse Leakage Current VR=25V 500 nA
VF Forward Voltage TCBAT42, TCBAT42XV2
TCBAT42, TCBAT43XV2
TCBAT42XV2, TCBAT43XV2
IF=10mA
IF=50mA
IF=2mA
IF=15mA
IF=200mA
0.26
0.40
0.65
0.33
0.45
1.0
Volts
TRR Reverse Recovery Time IF=IR=10mA
RL=100Ω
IRR=1mA
5 (Typical) nS
C Capacitance VR=1V, f=1MHZ 7 (Typical) pF
BAT42XV2 / BAT43XV2