BSC011N03LST MOSFET OptiMOSTMPower-MOSFET,30V TDSON-8FL(enlargedsourceinterconnection) 8 Features *OptimizedforhighperformanceBuckconverter *175Crated *Verylowon-resistanceRDS(on)@VGS=4.5V *100%avalanchetested *Superiorthermalresistance *N-channel *QualifiedaccordingtoJEDEC1)fortargetapplications *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21 1 Value Unit VDS 30 V RDS(on),max 1.1 m ID 100 A QOSS 40 nC QG(0V..10V) 72 nC Type/OrderingCode Package BSC011N03LST TDSON-8 FL 1) Marking 011N03LT 6 5 5 3 4 4 Table1KeyPerformanceParameters Parameter 2 7 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 100 100 100 39 A VGS=10V,TC=25C VGS=10V,TC=100C VGS=4.5V,TC=25C VGS=4.5V,TC=100C VGS=10V,TA=25C,RthJA=50K/W1) - 400 A TC=25C - - 50 A TC=25C EAS - - 190 mJ ID=50A,RGS=25 Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 115 3.0 W TC=25C TA=25C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 175 C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 4) The negative rating is for low duty cycle pulse occurrence. No continuous rating is implied Final Data Sheet 3 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250A - 0.1 10 1 100 A VDS=30V,VGS=0V,Tj=25C VDS=30V,VGS=0V,Tj=125C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.1 0.9 1.4 1.1 m VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance1) RG 0.3 0.6 1.2 - Transconductance gfs 85 170 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 4700 6300 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 1500 2000 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 220 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 6.7 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6 Rise time tr - 8.8 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6 Turn-off delay time td(off) - 37 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6 Fall time tf - 6.2 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6 Unit Note/TestCondition Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold Values Min. Typ. Max. Qgs - 11 15 nC VDD=15V,ID=30A,VGS=0to4.5V Qg(th) - 7.5 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 10.3 13 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 14 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 36 48 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 72 96 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 29 - nC VDS=0.1V,VGS=0to4.5V Qoss - 40 53 nC VDD=15V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See Gate charge waveforms for parameter definition Final Data Sheet 4 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 100 A TC=25C - 400 A TC=25C - 0.8 1 V VGS=0V,IF=30A,Tj=25C - 20 - nC VR=15V,IF=IS,diF/dt=400A/s Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 140 120 120 100 100 80 ID[A] Ptot[W] 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[C] 100 125 150 175 200 TC[C] Ptot=f(TC) ID=f(TC);VGS10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 s 10 s 102 100 100 s 0.5 1 ms 0.2 101 ZthJC[K/W] ID[A] 10 ms DC 0.1 10-1 0.05 0.02 0.01 100 10-1 10-1 single pulse 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 800 2.0 10 V 4.5 V 5V 700 4V 3.2 V 600 1.5 3.5 V 4V RDS(on)[m] ID[A] 500 400 3.2 V 300 3V 200 4.5 V 5V 1.0 7V 8V 10 V 0.5 2.8 V 100 0 3.5 V 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 80 100 ID[A] ID=f(VDS);Tj=25C;parameter:VGS RDS(on)=f(ID);Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 350 300 320 250 240 ID[A] gfs[S] 200 150 160 100 80 175 C 50 25 C 0 0 1 2 3 4 5 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25C 7 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 1.5 VGS(th)[V] RDS(on)[m] 2.0 1.5 1.0 1.0 typ 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[C] 60 100 140 180 Tj[C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250A Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 C 175 C Ciss 102 IF[A] C[pF] Coss 103 101 Crss 102 0 10 20 30 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 25 C 8 150 C VGS[V] IAV[A] 100 C 101 6 4 2 100 100 101 102 103 tAV[s] 0 0 10 20 30 40 50 60 70 80 Qgate[nC] IAS=f(tAV);RGS=25;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST 5PackageOutlines DOCUMENT NO. Z8B000193699 REVISION 03 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.26 0.54 4.80 5.35 3.70 4.40 0.02 0.23 5.70 6.10 5.90 6.42 3.88 4.42 1.27 0.69 0.90 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 19.06.2019 Figure1OutlineTDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST Figure2OutlineTape(TDSON-8FL) Final Data Sheet 11 Rev.2.2,2019-10-01 OptiMOSTMPower-MOSFET,30V BSC011N03LST PG-TDSON-8FL: RecommenGHd BoDrdpads & Apertures Figure 3 Final Data Sheet Outline Boardpads (TDSON-8 FL) 12 Rev.2.2,2019-10-01 OptiMOS TM Power-MOSFET , 30 V BSC011N03LST Revision History BSC011N03LST Revision: 2019-10-01, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-03-01 Release of final version 2.1 2017-10-30 Insert footnote under Vgs 2.2 2019-10-01 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.2, 2019-10-01