©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD112
NPN Silicon Darl ington Transistor
Absolute Maximu m Rating s TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 2 A
ICP Collector Current (Pulse) 4 A
IB Base Current 50 mA
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Param eter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30mA , IB = 0 100 V
ICEO Collector Cut-off Current VCE = 50V, IB = 0 20 µA
ICBO Collector Cut-off Current VCB = 100V, IB = 0 20 µA
IEBO Emitte r Cut- o ff Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 0.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
500
1000
200 12K
VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA
IC = 4A, IB = 40mA 2
3 V
V
VBE(sat) * Base-Emitter Saturation Voltage IC = 4A, IB = 40mA 4 V
VBE(on) * Base-Emitter ON Voltage VCE = 3A, IC = 2A 2.8 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.75A 25 MHz
Cob Output Capacitance VCB = 10V, IE = 0
f = 0.1MHz 100 pF
MJD112
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP112 1.Base 2.Collector 3.Emitter
R
110
k
Ω≅
R
20.6
k
Ω≅
Equivalent Circuit
B
E
C
R1 R2
D-PAK I-PAK
11
©2001 Fairchild Semiconductor Corporation
MJD112
Rev. A2, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
0.01 0.1 1 10
10
100
1000
10000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 250 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat) [V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tD
tR
tR,tD[µs], TU R N O N T IM E
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tF
tSTG
tSTG,tF[µs], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
5ms
100µs
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD112
Typical Characteristics (Continued)
Figure 7. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD112
Dimensions in Millimeters
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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EcoSPARK™
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FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
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ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
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Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
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STAR*POWER™
Stealth™
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SuperSOT™-6
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SyncFET™
TruTranslation™
TinyLogic™
UHC™
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VCX™
STAR*POWE R is used under license
