2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031—Rev. D, 04-Jun-01 www.vishay.com
8-1
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) VGS1 – VGS2 Max (mV)
2N5196 –0.7 to – 4 –50 1 –15 5
2N5197 –0.7 to –4 –50 1 –15 5
2N5198 –0.7 to –4 –50 1 –15 10
2N5199 –0.7 to –4 –50 1 –15 15
FEATURES BENEFITS APPLICATIONS
DMonolithic Design
DHigh Slew Rate
DLow Offset/Drift Voltage
DLow Gate Leakage: 5 pA
DLow Noise
DHigh CMRR: 100 dB
DTight Differential Match vs. Current
DImproved Op Amp Speed, Settling Time
Accuracy
DMinimum Input Error/Trimming Requirement
DInsignificant Signal Loss/Error Voltage
DHigh System Sensitivity
DMinimum Error with Large Input Signal
DWideband Differential Amps
DHigh-Speed, Temp-Compensated,
Single-Ended Input Amps
DHigh Speed Comparators
DImpedance Converters
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
Top View
G1
S1
D1
G2
D2
S2
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300 _C. . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea250 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-2 Document Number: 70252
S-04031—Rev. D, 04-Jun-01
SPECIFICATIONS FOR 2N5196 AND 2N5197 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5196 2N5197
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –57 –50 –50
Gate-Source Cutoff Voltage VGS(off) VDS = 20 V, ID = 1 nA –2–0.7 –4–0.7 –4V
Saturation Drain CurrentbIDSS VDS = 20 V, VGS = 0 V 3 0.7 70.7 7mA
VGS = –30 V, VDS = 0 V –10 –25 –25 pA
Gate Reverse Current IGSS TA = 150_C–20 –50 –50 nA
VDG = 20 V, ID = 200 mA–5–15 –15 pA
Gate Operating Current IGTA = 125_C–0.8 –15 –15 nA
Gate-Source Voltage VGS VDG = 20 V, ID = 200 mA–1.5 –0.2 –3.8 –0.2 –3.8 V
Dynamic
Common-Source
Forward T ransconductance gfs VDS = 20 V, VGS = 0 V 2.5 1 4 1 4 mS
Common-Source
Output Conductance gos
VDS = 20 V, VGS = 0 V
f = 1 kHz 2 50 50 mS
Common-Source
Forward T ransconductance gfs V
DS
= 20 V, I
D
= 200
m
A 0.8 0.7 1.6 0.7 1.6 mS
Common-Source
Output Conductance gos
VDS = 20 V, ID = 200
m
A
f = 1 kHz 1 4 4 mS
Common-Source
Input Capacitance Ciss VDS = 20 V, VGS = 0 V 3 6 6
Common-Source
Reverse Transfer Capacitance Crss
VDS = 20 V, VGS = 0 V
f = 1 MHz 1 2 2 pF
Equivalent Input Noise Voltage enVDS = 20 V, VGS = 0 V, f = 1 kHz 9 20 20 nV⁄
√Hz
Noise Figure NF VDS = 20 V, VGS = 0 V
f = 100 Hz, RG = 10 MW0.5 0.5 dB
Matching
Differential Gate-Source Voltage |VGS1–VGS2|VDG = 20 V, ID = 200 mA5 5 mV
Gate-Source Voltage Differential
Change with Temperature D|VGS1–VGS2|
DTVDG = 20 V, ID = 200 mA
TA = –55 to 125_C5 10 mV/_C
Saturation Drain Current Ratio IDSS1
IDSS2 VDS = 20 V, VGS = 0 V 0.98 0.95 1 0.95 1
T ransconductance Ratio gfs1
gfs2 V
DS
= 20 V, I
D
= 200
m
A 0.99 0.97 1 0.97 1
Differential Output Conductance |gos1–gos2|
VDS = 20 V, ID = 200
m
A
f = 1 kHz 0.1 1 1 mS
Differential Gate Current |IG1–IG2|VDG = 20 V, ID = 200 mA , TA = 125_C0.1 5 5 nA
Common Mode Rejection RatiocCMRR VDG = 10 to 20 V, ID = 200 mA100 dB
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031—Rev. D, 04-Jun-01 www.vishay.com
8-3
SPECIFICATIONS FOR 2N5198 AND 2N5199 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5198 2N5199
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –57 –50 –50
Gate-Source Cutoff Voltage VGS(off) VDS = 20 V, ID = 1 nA –2–0.7 –4–0.7 –4V
Saturation Drain CurrentbIDSS VDS = 20 V, VGS = 0 V 3 0.7 70.7 7mA
VGS = –30 V, VDS = 0 V –10 –25 –25 pA
Gate Reverse Current IGSS TA = 150_C–20 –50 –50 nA
VDG = 20 V, ID = 200 mA–5–15 –15 pA
Gate Operating Current IGTA =125_C–0.8 –15 –15 nA
Gate-Source Voltage VGS VDG = 20 V, ID = 200 mA–1.5 –0.2 –3.8 –0.2 –3.8 V
Dynamic
Common-Source
Forward T ransconductance gfs 2.5 1 4 1 4 mS
Common-Source
Output Conductance gos
VDS = 20 V, VGS = 0 V, f = 1 kHz 2 50 50 mS
Common-Source
Forward T ransconductance gfs V
DS
= 20 V, I
D
= 200
m
A 0.8 0.7 1.6 0.7 1.6 mS
Common-Source
Output Conductance gos
VDS = 20 V, ID = 200
m
A
f = 1 kHz 1 4 4 mS
Common-Source Input Capacitance Ciss 3 6 6
Common-Source
Reverse Transfer Capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz 1 2 2 pF
Equivalent Input Noise Voltage enVDS = 20 V, VGS = 0 V, f = 1 kHz 9 20 20 nV⁄
√Hz
Noise Figure NF VDS = 20 V, VGS = 0 V
f = 100 Hz, RG = 10 MW0.5 0.5 dB
Matching
Differential Gate-Source Voltage |VGS1–VGS2|VDG = 20 V, ID = 200 mA10 15 mV
Gate-Source Voltage Differential
Change with Temperature D|VGS1–VGS2|
DTVDG = 20 V, ID = 200 mA
TA = –55 to 125_C20 40 mV/_C
Saturation Drain Current Ratio IDSS1
IDSS2 VDS = 20 V, VGS = 0 V 0.97 0.95 1 0.95 1
T ransconductance Ratio gfs1
gfs2 V
DS
= 20 V, I
D
= 200
m
A 0.97 0.95 1 0.95 1
Differential Output Conductance |gos1–gos2|
VDS = 20 V, ID = 200
m
A
f = 1 kHz 0.2 1 1 mS
Differential Gate Current |IG1–IG2|VDG = 20 V, ID = 200 mA , TA = 125_C0.1 5 5 nA
Common Mode Rejection RatiocCMRR VDG = 10 to 20 V, ID = 200 mA97 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-4 Document Number: 70252
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
5
0–5–4–3–2–1
4
2
1
00302010 40 50
3
2.6
2.2
1
3
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDG = 15 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
200 mA
100 pA
1 nA
10 nA
100 nA
5
4
3
2
1
0
Output Characteristics Output Characteristics
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.3 V
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–0.8 V
–1.0 V
–1.2 V
–1.2 V
–1.8 V
VGS(off) = –2 V
VGS = 0 V
5
4
3
2
1
0
VGS = 0 V
VGS(off) = –3 V
2
0 0.6 0.80.40.2 1
1.6
1.2
0.8
0.4
0
Output Characteristics Output Characteristics
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
VGS(off) = –2 V
VGS = 0 V
2.5
2.0
1.5
1.0
0.5
00 0.6 0.80.40.2 1
VGS = 0 V
VGS(off) = –3 V –0.3 V
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–1.2 V
–2.4 V
–1.8 V
1.8
1.4
50 mA
IG @ ID = 200 mA
–1.6 V
012168420
–1.4 V –2.4 V
012168420
50 mA
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
IG – Gate Leakage
ID – Drain Current (mA)
ID – Drain Current (mA)ID – Drain Current (mA)
ID – Drain Current (mA)
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031—Rev. D, 04-Jun-01 www.vishay.com
8-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.01 0.1 1
10
1
0–1.5–1.0–0.5 –2.0 –2.5
4
3
2
1
0
0.01 0.1 1
130
120
80
110
100
90
0.01 0.1 1
100
10
1
100
5
0.1 10.01
100
80
60
40
20
0
Transfer Characteristics Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current Common Mode Rejection Ratio
vs. Drain Current
CMRR (dB)
VGS – Gate-Source Voltage (V) ID – Drain Current (mA)
ID – Drain Current (mA) ID – Drain Current (mA)
ID – Drain Current (mA)
2N5196
TA = –55_C
125_C
VGS(off) = –2 V
VDG = 20 V
DTA = 25 to 125_C
DTA = –55 to 25_C
VDG = 20 V
TA = 25_C
5 – 10 V
VGS(off) = –3 V
Circuit Voltage Gain vs. Drain Current
2N5199
2N5196
2N5199
On-Resistance vs. Drain Current
ID – Drain Current (mA)
0.01 0.1 1
1 k
800
600
400
200
0
VGS(off) = –2 V
AV+gfs RL
1)RLgos
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
VDS = 20 V
VGS(off) = –2 V VGS(off) = –3 V
25_C
DVDG = 10 – 20 V
(mV)
VGS1 VGS2
–
V/ _C
()
t
D
Dm
VGS1 VGS2
–
VGS1 VGS2
–
DVDG
CMRR = 20 log D
rDS(on) – Drain-Source On-Resistance ( Ω )
ID – Drain Current (mA)
AV – Voltage Gain
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-6 Document Number: 70252
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
10
0–12 –16 –20–8–4
8
6
4
2
0
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
– Input Capacitance (pF)Ciss
VDS = 0 V
5 V
20 V
f = 1 MHz 5
0–12 –20–16–8–4
4
3
2
1
0
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
– Reverse Feedback Capacitance (pF)Crss
VGS – Gate-Source Voltage (V)
VDS = 0 V
5 V
15 V
f = 1 MHz
16
12
8
4
0
20 Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 20 V
ID @ 200 mA
VGS = 0 V
2.5
2.0
1.5
1.0
0.5
00.01 0.1 1
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
0.01 0.1 1
2.5
2.0
1.5
1.0
0.5
0
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
1 k
0–3–5–4–2–1
800
600
400
200
0
10
8
6
4
2
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz
rDS
gos
25_C
25_C
VGS(off) = –2 V VDS = 20 V
f = 1 kHz
VGS(off) = –2 V VDS = 20 V
f = 1 kHz
15 V
20 V
S)gos – Output Conductance (m
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS)
