OPA552UA/2K5G4 - Texas Instruments

SBOS100A – JULY 1999 – REVISED OCTOBER 2003

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PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

OPA551

OPA552

High-Voltage, High-Current

OPERATIONAL AMPLIFIERS

DESCRIPTION

The OPA551 and OPA552 are low cost op amps with high-

voltage (60V) and high-current (200mA) capability.

The OPA551 is unity-gain stable and features high slew rate

(15Vµs) and wide bandwidth (3MHz). The OPA552 is

optimized for gains of 5 or greater, and offers higher speed

with a slew rate of 24V/µs and a bandwidth of 12MHz. Both

are suitable for telephony, audio, servo, and test applications.

These laser-trimmed, monolithic integrated circuits provide

excellent low-level accuracy along with high output swing.

High performance is maintained as the amplifier swings to

its specified limits.

The OPA551 and OPA552 are internally protected against

over-temperature conditions and current overloads. The

thermal shutdown indicator “flag” provides a current output

to alert the user when thermal shutdown has occurred.

The OPA551 and OPA552 are available in DIP-8 and

SO-8 packages, as well as a DDPAK-7 surface-mount

plastic power package. They are specified for operation

over the extended industrial temperature range, –40°C to

+125°C.

FEATURES

●WIDE SUPPLY RANGE: ±4V to ±30V

●HIGH OUTPUT CURRENT: 200mA Continuous

●LOW NOISE: 14nV/√Hz

●FULLY PROTECTED:

Thermal Shutdown

Output Current-Limited

●THERMAL SHUTDOWN INDICATOR

●WIDE OUTPUT SWING: 2V From Rail

●FAST SLEW RATE:

OPA551: 15V/µs

OPA552: 24V/µs

●WIDE BANDWIDTH:

OPA551: 3MHz

OPA552: 12MHz

●PACKAGES: DIP-8, SO-8, or DDPAK-7

OPA551

APPLICATIONS

●TELEPHONY

●TEST EQUIPMENT

●AUDIO AMPLIFIERS

●TRANSDUCER EXCITATION

●SERVO DRIVERS

Flag

V+

Out

V–

–In

+In

V–

OPA551, OPA552

SO-8 (U)

Flag

V+

Out

–In

+In

V–

OPA551, OPA552

DIP-8 (P)

NOTE: Tab is

connected to

V– supply. NCV–V+

Out

+In–In

123456

Flag

DDPAK-7 Surface-Mount (F)

OPA551, OPA552

2SBOS100A

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SPECIFICATIONS: VS = ±30V

OPA551

At TJ = +25°C(1), RL = 3kΩ connected to ground and VOUT = 0V, unless otherwise noted.

Boldface limits apply over the specified junction temperature range, TJ = –40°C to +125°C.

OPA551UA, PA, FA

PARAMETER CONDITION MIN TYP MAX UNITS

OFFSET VOLTAGE

Input Offset Voltage VOS VCM = 0V, IO = 0 ±1±3mV

TJ = –40°C to +125°C±5mV

vs Temperature dVOS/dT ±7µV/°C

vs Power Supply PSRR VS = ±4V to ±30V, VCM = 0V 10 30 µV/V

INPUT BIAS CURRENT

Input Bias Current IB±20 ±100 pA

Input Offset Current IOS ±3±100 pA

NOISE

Input Voltage Noise Density, f = 1kHz en14 nV/√Hz

Current Noise Density, f = 1kHz in3.5 fA/√Hz

INPUT VOLTAGE RANGE

Common-Mode Voltage Range VCM (V–) + 2.5 (V+) – 2.5 V

Common-Mode Rejection Ratio CMRR –27.5V < VCM < +27.5V 92 102 dB

INPUT IMPEDANCE

Differential 1013 || 2 Ω || pF

Common-Mode 1013 || 6 Ω || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain AOL RL = 3kΩ, –28V < VO < +28V 110 126 dB

TJ = –40°C to +125°CR

L = 3kΩ, –28V < VO < +28V 100 dB

RL = 300Ω, –27V < VO < +27V 120 dB

FREQUENCY RESPONSE

Gain-Bandwidth Product GBW 3 MHz

Slew Rate SR G = 1 ±15 V/µs

Settling Time: 0.1% G = 1, CL = 100pF, 10V Step 1.3 µs

0.01% G = 1, CL = 100pF, 10V Step 2 µs

Total Harmonic Distortion + Noise, f = 1kHz THD+N

VO = 15Vr ms, RL = 3kΩ, G = 3 0.0005 %

VO = 15Vr ms, RL = 300Ω, G = 3 0.0005 %

Overload Recovery Time VIN • Gain = VS1µs

OUTPUT

Voltage Output VOUT IO = 200mA (V–) + 3.0 (V+) – 3.0 V

TJ = –40°C to +125°CI

O = 200mA (V–) + 3.5 (V+) – 3.5 V

IO = 10mA (V–) + 2.0 (V+) – 2.0 V

TJ = –40°C to +125°CI

O = 10mA (V–) + 2.5 (V+) – 2.7 V

Maximum Continuous Current Output: dc IOPackage Dependent—See Text ±200 mA

Short-Circuit Current ISC ±380 mA

Capacitive Load Drive CLOAD Stable Operation See Typical Curve

SHUTDOWN FLAG

Thermal Shutdown Status Output

Normal Operation Sourcing 0.05 1 µA

Thermally Shutdown Sourcing 80 120 160 µA

Voltage Compliance Range V–(V+) – 1.5 V

Junction Temperature

Shutdown 160 °C

Reset from Shutdown 140 °C

POWER SUPPLY

Specified Voltage VS±30 V

Operating Voltage Range ±4±30 V

Quiescent Current IQIO = 0 ±7±8.5 mA

TJ = –40°C to +125°C±10 mA

TEMPERATURE RANGE

Specified Range TJ–40 +125 °C

Operating Range TJ–55 +125 °C

Storage Range TA–65 +150 °C

Thermal Resistance

SO-8 Surface Mount

JA 90 °C/W

DIP-8

JA 100 °C/W

DDPak-7

JA 65 °C/W

DDPak-7

JC 3°C/W

NOTES: (1) All tests are high-speed tested at +25°C ambient temperature. Effective junction temperature is +25°C unless otherwise noted.

OPA551, OPA552 3

SBOS100A www.ti.com

SPECIFICATIONS: VS = ±30V

OPA552

At TJ = +25°C(1), RL = 3kΩ connected to Ground and VOUT = 0V, unless otherwise noted.

Boldface limits apply over the specified junciton temperature range, TJ = –40°C to +125°C.

OPA552UA, PA, FA

PARAMETER CONDITION MIN TYP MAX UNITS

OFFSET VOLTAGE

Input Offset Voltage VOS VCM = 0V, IO = 0 ±1±3mV

TJ = –40°C to +125°C±5mV

vs Temperature dVOS/dT ±7µV/°C

vs Power Supply PSRR VS = ±4V to ±30V, VCM = 0V 10 30 µV/V

INPUT BIAS CURRENT

Input Bias Current IB±20 ±100 pA

Input Offset Current IOS ±3±100 pA

NOISE

Input Voltage Noise Density, f = 1kHz en14 nV/√Hz

Current Noise Density, f = 1kHz in3.5 fA/√Hz

INPUT VOLTAGE RANGE

Common-Mode Voltage Range VCM (V–) + 2.5 (V+) – 2.5 V

Common-Mode Rejection Ratio CMRR –27.5V < VCM < +27.5V 92 102 dB

INPUT IMPEDANCE

Differential 1013 || 2 Ω || pF

Common-Mode 1013 || 6 Ω || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain AOL RL = 3kΩ, –28V < VO < +28V 110 126 dB

TJ = –40°C to +125°CR

L = 3kΩ, –28V < VO < +28V 100 dB

RL = 300Ω, –27V < VO < +27V 120 dB

FREQUENCY RESPONSE

Gain-Bandwidth Product GBW 12 MHz

Slew Rate SR G = 5 ±24 V/µs

Settling Time: 0.1% G = 5, CL = 100pF, 10V Step 2.2 µs

0.01% G = 5, CL = 100pF, 10V Step 3 µs

Total Harmonic Distortion + Noise, f = 1kHz THD+N

VO = 15Vr ms, RL = 3kΩ, G = 5 0.0005 %

VO = 15Vr ms, RL = 300Ω, G = 5 0.0005 %

Overload Recovery Time VIN • Gain = VS1µs

OUTPUT

Voltage Output VOUT IO = 200mA (V–) + 3.0 (V+) – 3.0 V

TJ = –40°C to +125°CI

O = 200mA (V–) + 3.5 (V+) – 3.5 V

IO = 10mA (V–) + 2.0 (V+) – 2.0 V

TJ = –40°C to +125°CI

O = 10mA (V–) + 2.5 (V+) – 2.7 V

Maximum Continuous Current Output: dc IOPackage Dependent—See Text ±200 mA

Short-Circuit Current ISC ±380 mA

Capacitive Load Drive CLOAD Stable Operation See Typical Curve

SHUTDOWN FLAG

Thermal Shutdown Status Output

Normal Operation Sourcing 0.05 1 µA

Thermally Shutdown Sourcing 80 120 160 µA

Voltage Compliance Range V–(V+) – 1.5 V

Junction Temperature

Shutdown 160 °C

Reset from Shutdown 140 °C

POWER SUPPLY

Specified Voltage VS±30 V

Operating Voltage Range ±4±30 V

Quiescent Current IQIO = 0 ±7±8.5 mA

TJ = –40°C to +125°C±10 mA

TEMPERATURE RANGE

Specified Range TJ–40 +125 °C

Operating Range TJ–55 +125 °C

Storage Range TA–65 +150 °C

Thermal Resistance

SO-8 Surface Mount

JA 90 °C/W

DIP-8

JA 100 °C/W

DDPak-7

JA 65 °C/W

DDPak-7

JC 3°C/W

NOTES: (1) All tests are high-speed tested at +25°C ambient temperature. Effective junction temperature is +25°C unless otherwise noted.

OPA551, OPA552

4SBOS100A

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ABSOLUTE MAXIMUM RATINGS(1)

Output Current ................................................................. See SOA Curve

Supply Voltage, V+ to V–................................................................... 60V

Input Voltage Range....................................... (V–) – 0.5V to (V+) + 0.5V

Operating Temperature ..................................................–55°C to +125°C

Storage Temperature .....................................................–65°C to +150°C

Junction Temperature.................................................................... +150°C

Lead Temperature (soldering 10s, DIP-8) ...................................... 300°C

(soldering 3s, SO-8 and DDPAK) .................... 240°C

ESD Capability (Human Body Model)............................................. 3000V

NOTE: (1) Stresses above these ratings may cause permanent damage.

Exposure to absolute maximum conditions for extended periods may degrade

device reliability.

ELECTROSTATIC

DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Burr-Brown

recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling

and installation procedures can cause damage.

ESD damage can range from subtle performance degrada-

tion to complete device failure. Precision integrated circuits

may be more susceptible to damage because very small

parametric changes could cause the device not to meet its

published specifications.

PACKAGE/ORDERING INFORMATION

For the most current package and ordering information, see the Package Ordering Addendum at the end of this data sheet.

OPA551, OPA552 5

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TYPICAL PERFORMANCE CURVES

At TJ = +25°C, VS = ±30V and RL = 3kΩ, unless otherwise noted.

All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient

temperatures for a specific configuration.

140

120

100

–20

–40

–20

–40

–60

–80

–100

–120

–140

–160

–180

1 10 100 1k 10k 100k 1M 10M

Frequency (Hz)

Gain (dB)

OPEN-LOOP GAIN AND PHASE vs FREQUENCY

OPA551

Phase (°)

Phase

Gain

OPA551 140

120

100

–20

–40

–20

–40

–60

–80

–100

–120

–140

–160

–180

1 10 100 1k 10k 100k 1M 10M

Frequency (Hz)

Gain (dB)

OPEN-LOOP GAIN AND PHASE vs FREQUENCY

OPA552

Phase (°)

Phase

OPA552

Gain

120

100

01 10 100 1k 10k 100k 1M 10M

Frequency (Hz)

CMRR (dB)

COMMON-MODE REJECTION RATIO vs FREQUENCY

120

100

01 10 100 1k 10k 100k 1M 10M

Frequency (Hz)

PSRR (dB)

POWER SUPPLY REJECTION RATIO vs FREQUENCY

–PSRR

+PSRR

10k

100

INPUT VOLTAGE AND CURRENT NOISE

SPECTRAL DENSITY vs FREQUENCY

Voltage Noise (nV/√Hz)

Current Noise (fA/√Hz)

10 100 1k 10k 100k 1M

Frequency (Hz)

0.1

0.01

0.001

0.0001

TOTAL HARMONIC DISTORTION + NOISE

vs FREQUENCY

Frequency (Hz)

1 100 1k 10k 100k

THD+N (%)

= 15Vrms

= 3kΩ, 300Ω

G = 3 (OPA551)

G = 5 (OPA552)

OPA551, OPA552

6SBOS100A

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TYPICAL PERFORMANCE CURVES (Cont.)

At TJ = +25°C, VS = ±30V and RL = 3kΩ, unless otherwise noted.

All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient

temperatures for a specific configuration.

450

430

410

390

370

350

330

310

290

270

–75 –50 –25 0 25 50 75 100 125 150

Temperature (°C)

IQ (mA)

ISC (mA)

QUIESCENT CURRENT AND SHORT-CIRCUIT CURRENT

vs TEMPERATURE

+ISC

–ISC

±30

±25

±20

±15

±10

±5

01 10 100 1k 10k 100k 1M 10M

Frequency (Hz)

Maximum Output Voltage (V)

MAXIMUM OUTPUT VOLTAGE SWING

vs FREQUENCY

OPA552

OPA551

Without Slew-Induced

Distortion

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT

(V+)

(V+)–1

(V+)–2

(V+)–3

(V–)+3

(V–)+2

(V–)+1

(V–)0 50 100 150 200 250 300 350 400

Output Current (mA)

Output Voltage Swing (V)

–55°C

+85°C

–55°C

+25°C

100k

10k

100

1–75 0–25–50 25 50 75 100 125

Ambient Temperature (°C)

Current (pA)

INPUT BIAS CURRENT AND INPUT OFFSET CURRENT

vs TEMPERATURE

+IB

–IB

–IOS

100

1–80 –60 –40 –20 0 20 40 60 80 100 120 140

Temperature (°C)

Gain Bandwidth Product (MHz)

GAIN BANDWIDTH PRODUCT vs TEMPERATURE

OPA552

OPA551

130

125

120

115

110

105

100

80–75 –25 25 75 125

Ambient Temperature (°C)

Gain (dB)

OPEN-LOOP GAIN, POWER SUPPLY REJECTION RATIO,

AND COMMON-MODE REJECTION RATIO

vs TEMPERATURE

AOL

PSRR

CMRR

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TYPICAL PERFORMANCE CURVES (Cont.)

At TJ = +25°C, VS = ±30V and RL = 3kΩ, unless otherwise noted.

All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient

temperatures for a specific configuration.

0–60 –40 –20 0 20 40 60 80 100 120 140

Junction Temperature (°C)

Slew Rate (V/µs)

SLEW RATE vs TEMPERATURE

OPA551

OPA552

–5–30 –20 –10 0 10 20 30

Common-Mode Voltage (V)

Current (pA)

INPUT BIAS CURRENT AND INPUT OFFSET CURRENT

vs COMMON-MODE VOLTAGE

–I

OFFSET VOLTAGE

PRODUCTION DISTRIBUTION

Percent of Amplifiers (%)

Offset Voltage (mV)

< –3.0

< –2.4

< –1.8

< –1.2

< –0.6

< 0.0

< 0.6

< 1.2

< 1.8

< 2.4

< 3.0

Typical production

distribution of

packaged units.

OFFSET VOLTAGE DRIFT

PRODUCTION DISTRIBUTION

Percent of Amplifiers (%)

Offset Drift µV/°C

< 0.0

< 1.5

< 3.0

< 4.50

< 6.0

< 7.5

< 9.0

< 10.5

< 12.0

< 13.5

< 15.0

Typical production

distribution of

packaged units.

100

11 10 100

Gain (V/V)

Settling Time (µs)

SETTLING TIME vs CLOSED-LOOP GAIN

OPA551

0.1%

OPA552

0.01%

OPA552

0.1%

OPA551

0.01%

7.6

7.2

6.8

6.4

6.0

405

395

385

375

365

0 5 10 15 20 25 30 35

Supply Voltage (V)

Quiescent Current (mA)

Short-Circuit Current (mA)

QUIESCENT CURRENT AND SHORT-CIRCUIT CURRENT

vs SUPPLY VOLTAGE

+ISC

–ISC

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TYPICAL PERFORMANCE CURVES (Cont.)

At TJ = +25°C, VS = ±30V and RL = 3Ω, unless otherwise noted.

All temperatures are junction temperatures unless otherwise noted. Refer to the Applications Information section to calculate junction temperatures from ambient

temperatures for a specific configuration.

SMALL-SIGNAL STEP RESPONSE

OPA552, G = 5, CL = 100pF

Time (1µs/div)

100mV/div

SMALL-SIGNAL STEP RESPONSE

OPA551, G = –1, CL = 1000pF

Time (1µs/div)

5V/div

LARGE-SIGNAL STEP RESPONSE

OPA552, G = 5, CL = 100pF

Time (1µs/div)

5V/div

SMALL-SIGNAL STEP RESPONSE

OPA551, G = 1, CL = 100pF

Time (1µs/div)

LARGE-SIGNAL STEP RESPONSE

OPA551, G = 1, CL = 100pF

Time (1µs/div)

5V/div

25mV/div

00.01 10.1 10

Load Capacitance (nF)

Overshoot (%)

SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE

OPA551, G = 1

OPA551

G = –2

OPA551

G = –1

OPA552

G = –4

OPA552

G = –6

OPA552, G = –8

OPA552

OPA551

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APPLICATIONS INFORMATION

Figure 1 shows the OPA551 connected as a basic non-

inverting amplifier. The OPA551 can be used in virtually

any op amp configuration. OPA552 is designed for use in

configurations with gains of 5 or greater. Power supply

terminals should be bypassed with 0.1µF capacitors, or

greater, near the power supply pins. Be sure that the capaci-

tors are appropriately rated for the power supply voltage

used. The OPA551 and OPA552 can supply output currents

up to 200mA with excellent performance.

FIGURE 1. Basic Circuit Connections.

CURRENT LIMIT

The OPA551 and OPA552 are designed with internal cur-

rent-limiting circuitry that limits the output current to ap-

proximately 380mA. The current limit varies with increasing

junction temperature as shown in the typical curve “Current

Limit vs Temperature.” This, in combination with the ther-

mal protection circuitry, provides protection from many

types of overload conditions including short circuit to ground.

THERMAL PROTECTION

The OPA551 and OPA552 have thermal shutdown circuitry

that protects the amplifier from damage caused by overload

conditions. The thermal protection circuitry disables the

output when the junction temperature reaches approximately

160°C, allowing the device to cool. When the junction

temperature cools to approximately 140°C, the output cir-

cuitry is automatically re-enabled.

The thermal shutdown function is not intended to replace

proper heat sinking. Activation of the thermal shutdown

circuitry is an indication of excessive power dissipation or

an inadequate heat sink. Continuously running the amplifier

into thermal shutdown can degrade reliability.

The Thermal Shutdown Indicator (“flag”) pin can be moni-

tored to determine if shutdown is occurring. During normal

operation, the current output from the flag pin is typically

50nA. During shutdown, the current output from the flag pin

increases to 120µA (typical). This current output allows for

easy interfacing to external logic. See Figure 2 for two

examples implementing this function.

FIGURE 2. Thermal Shutdown Indicator.

G = 1+

0.1µF

10µF

OPA551

V–

V+

10µF

0.1µF

Flag

(optional)

Flag

80µA to

160µA

HCT

OPA551

Logic

Ground

VOUT

+5V

27kΩ

VLOGIC

VOUT

CMOS

OPA551

Logic

Ground

Interfacing with CMOS Logic

Interfacing with HCT Logic

47kΩ

HP5082-2835

Interface to virtually any CMOS

logic gate by choosing resistor

value that provides a guaranteed

logic high voltage with the

minimum (80µA) flag current. A

diode clamp to the logic supply

voltage assures that the CMOS

is not damaged by overdrive.

HCT logic has relatively well-

controlled logic level. A properly

chosen resistor value can

guarantee proper logic high level

throughout the full range of flag

output current.

OPA551, OPA552

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POWER SUPPLIES

The OPA551 and OPA552 may be operated from power

supplies of ±4V to ±30V, or a total of 60V with excellent

performance. Most behavior remains unchanged throughout

the full operating voltage range. Parameters that vary sig-

nificantly with operating voltage are shown in the Typical

Performance Curves.

For applications that do not require symmetrical output

voltage swing, power supply voltages do not need to be

equal. The OPA551 and OPA552 can operate with as little

as 8V between the supplies or with up to 60V between the

supplies. For example, the positive supply could be set to

50V with the negative supply at –10V or vice-versa.

The SO-8 package outline shows three negative supply (V–)

pins. These pins are internally connected for improved thermal

performance. Pin 4 is to be used as the primary current

carrier for the negative supply. It is recommended that

pins 1 and 5 not be directly connected to V– but, instead

be connected to a thermal mass. DO NOT lay out the PC

board to use pins 1 and 5 as feedthroughs to the negative

supply. Doing so can result in a reduction of performance.

The tab of the DDPAK-7 package is electrically connected

to the negative supply (V–), however, this connection should

not be used to carry current. For best thermal performance,

the tab should be soldered directly to the circuit board

copper area (see heat sink text).

POWER DISSIPATION

Internal power dissipation of these op amps can be quite

large. Many of the specifications for the OPA551 and

OPA552 are for a specified junction temperature. If the

device is not subjected to internal self-heating, the junction

temperature will be the same as the ambient. However, in

practical applications, the device will self-heat and the junc-

tion temperature will be significantly higher than ambient.

After junction temperature has been established, perfor-

mance parameters that vary with junction temperature can be

determined from the performance curves. The following

calculation can be performed to establish junction tempera-

ture as a function of ambient temperature and the conditions

of the application.

Consider the OPA551 in a circuit configuration where the

load is 600Ω and the output voltage is 15V. The supplies are

at ±30V and the ambient temperature (TA) is 40°C. The

for the 8-pin DIP package is 100°C/W.

First, the internal heating of the op amp is as follows:

PD(internal) = IQ • VS = 7.2mA • 60V = 432mW

The output current (IO) can be calculated:

IO = VOUT/RL = 15V/600Ω = 25mA

The power being dissipated (PD) in the output transistor of

the amplifier can be calculated:

PD(output stage) = IO • (VS – VO) = 25mA • (30 – 15) = 375mW

PD(total) = PD(internal) + PD(output stage) = 432mW + 375mW = 807mW

The resulting junction temperature can be calculated:

TJ = TA + PD

TJ = 40°C + 807mW • 100°C/W = 120.7°C

Where,

TJ = junction temperature (°C)

TA = ambient temperature (°C)

JA = junction-to-air thermal resistance (°C/W)

For the DDPAK package, the

JA is 65°C/W with no heat

sinking, resulting in a junction temperature of 92.5°C.

To estimate the margin of safety in a complete design

(including heat sink), increase the ambient temperature until

the thermal protection is activated. Use worst-case load and

signal conditions. For good reliability, the thermal protec-

tion should trigger more than +35°C above the maximum

expected ambient condition of your application. This en-

sures a maximum junction temperature of +125°C at the

maximum expected ambient condition.

If the OPA551 or OPA552 is to be used in an application

requiring more than 0.5W continuous power dissipation, it

is recommended that the DDPAK package option be used.

The DDPAK has superior thermal dissipation characteris-

tics and is more easily adapted to a heat sink.

Operation from a single power supply (or unbalanced power

supplies) can produce even larger power dissipation since a

larger voltage can be impressed across the conducting output

transistor. Consult Application Bulletin AB-039 for further

information on how to calculate or measure power dissipation.

Power dissipation can be minimized by using the lowest

possible supply voltage. For example, with a 200mA load,

the output will swing to within 3.5V of the power supply

rails. Power supplies set to no more than 3.5V above the

maximum output voltage swing required by the application

will minimize the power dissipation.

SAFE OPERATING AREA

The Safe Operating Area (SOA curves, Figures 3, 4, and 5)

shows the permissible range of voltage and current. The

curves shown represent devices soldered to a circuit board

with no heat sink. The safe output current decreases as the

voltage across the output transistor (VS – VO) increases. For

further insight on SOA, consult Application Bulletin AB-039.

Output short circuits are a very demanding case for SOA.

A short circuit to ground forces the full power supply

voltage (V+ or V–) across the conducting transistor and

produces a typical output current of 380mA. With ±30V

OPA551, OPA552 11

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power supplies, this creates an internal dissipation of 11.4W.

This far exceeds the maximum rating and is not recom-

mended. If operation in this region is unavoidable, use the

DDPAK with a heat sink.

HEAT SINKING

Power dissipated in the OPA551 or OPA552 will cause the

junction temperature to rise. For reliable operation, the

junction temperature should be limited to +125°C. Many

applications will require a heat sink to assure that the

maximum operating junction temperature is not exceeded.

The heat sink required depends on the power dissipated and

on ambient conditions.

For heat sinking purposes, the tab of the DDPAK is typically

soldered directly to a circuit board copper area. Increasing

the copper area improves heat dissipation. Figure 6 shows

typical thermal resistance from junction-to-ambient as a

function of copper area.

Depending on conditions, additional heat sinking may be

required. Aavid Thermal Products Inc. manufactures sur-

face-mountable heat sinks designed specifically for use with

DDPAK packages. Further information is available on

Aavid’s web site, www.aavid.com.

To estimate the margin of safety in a complete design

(including heat sink), increase the ambient temperature until

the thermal protection is activated. Use worst-case load and

signal conditions. For good reliability, the thermal protec-

tion should trigger more than +25°C above the maximum

expected ambient condition of your application. This pro-

duces a junction temperature of +125°C at the maximum

expected ambient condition.

FIGURE 5. DDPAK-7 Safe Operating Area.

FIGURE 3. DIP-8 Safe Operating Area.

FIGURE 4. SO-8 Safe Operating Area.

FIGURE 6. DDPAK Thermal Resistance vs Circuit Board

Copper Area.

THERMAL RESISTANCE vs

CIRCUIT BOARD COPPER AREA

0012345

Copper Area (inches

)

OPA551, OPA552

Surface-Mount Package

1oz. copper

Circuit Board Copper Area

OPA551, OPA552

Surface-Mount Package

Thermal Resistance,

(°C/W)

1000

100

0.1 1 10 100

| VS | – | VO | (V)

IO (mA)

SAFE OPERATING AREA—8-PIN DIP

125°C

85°C

25°C

1000

100

0.1 1 10 100

| VS | – | VO | (V)

IO (mA)

SAFE OPERATING AREA—SO-8

125°C

85°C

25°C

1000

100

0.1 1 10 100

| VS | – | VO | (V)

IO (mA)

SAFE OPERATING AREA—DDPAK

125°C

1" Copper 85°C

25°C25°C

1" Copper

OPA551, OPA552

12 SBOS100A

www.ti.com

FIGURE 7. Driving Large Capacitive Loads.

CAPACITIVE LOADS

The dynamic characteristics of the OPA551 and OPA552

have been optimized for commonly encountered gains, loads,

and operating conditions. The combination of low closed-

loop gain and capacitive load will decrease the phase margin

and may lead to gain peaking or oscillations. Figure 7 shows

a circuit that preserves phase margin with capacitive load.

Figure 8 shows the small-signal step response for the circuit

in Figure 7. Consult Application Bulletin AB-028 for more

information.

FIGURE 8. Small-Signal Step Response for Figure 7.

SMALL-SIGNAL STEP RESPONSE

OPA551, G = –1, CL = 10nF

Time (2.5µs/div)

20mV/div

FIGURE 9. Parallel Amplifers Increase Output Current Ca-

pability.

INCREASING OUTPUT CURRENT

In those applications where the 200mA of output current is

not sufficient to drive the desired load, output current can be

increased by connecting two or more OPA551s or OPA552s

in parallel as shown in Figure 9. Amplifier A1 is the

“master” amplifier and may be configured in virtually an op

amp circuit. Amplifier A2, the “slave”, is configured as a

unity gain buffer. Alternatively, external output transistors

can be used to boost output current. The circuit in Figure 10

is capable of supplying output currents up to 1A. Alterna-

tively, the OPA547, OPA548, and OPA549 series power op

amps should be considered for high output current drive,

along with programmable current limit and output disable

capability.

FIGURE 10. External Output Transistors Boost Output Cur-

rent Up to 1 Amp.

4kΩ

1.8nF

10nF

OPA551

+30V

–30V

VICF

220pF

4kΩ

R1R2

OPA551

“SLAVE”

“MASTER”

VIN

RS(1)

10Ω

RS(1)

10Ω

NOTE: (1) RS resistors minimize the circulating

current that can flow between the two devices

due to VOS errors.

R1R2

OPA551

TIP30C

TIP29C

VIN

+30V

–30V

R3(1)

100Ω

NOTE: (1) R3 provides current limit and allows the amplifier to

drive the load when the output is between 0.7V and –0.7V.

0.2Ω

LOAD

OPA551

OPA551, OPA552 13

SBOS100A www.ti.com

INPUT PROTECTION

The OPA551 and OPA552 feature internal clamp diodes

to protect the inputs when voltages beyond the supply rails

are encountered. However, input current should be limited

to 5mA. In some cases, an external series resistor may be

required. Many input signals are inherently current-limtied,

therefore, a limiting resistor may not be required. Please

consider that a “large” series resistor, in conjunction with

the input capacitance, can affect stability.

USING THE OPA552 IN LOW GAINS

The OPA552 family is intended for applications with

signal gains of 5 or greater, but it is possible to take

advantage of their high slew rate in lower gains using an

external compensation technique in an inverting configu-

ration. This technique maintains low noise characteristics

of the OPA552 architecture at low frequencies. Depending

on the application, a small increase in high frequency

noise may result. This technique shapes the loop gain for

good stability while giving an easily controlled second-

order low-pass frequency response.

Considering only the noise gain (non-inverting signal

gain) for the circuit of Figure 11, the low frequency noise

gain (NG1) will be set by the resistor ratios, while the high

frequency noise gain (NG2) will be set by the capacitor

ratios. The capacitor values set both the transition fre-

quencies and the high frequency noise gain. If this noise

gain, determined by NG2 = 1 + CS/CF, is set to a value

greater than the recommended minimum stable gain for

the op amp and the noise gain pole, set by 1/RFCF, is

placed correctly, a very well controlled, 2nd-order low-

pass frequency response will result.

To choose the values for both CS and CF, two parameters

and only three equations need to be solved. First, the

target for the high frequency noise gain (NG2) should be

greater than the minimum stable gain for the OPA552. In

the circuit in Figure 11, a target NG2 of 10 is used.

Second, the signal gain of –1 shown in Figure 11 sets the

low frequency noise gain to NG1 = 1 + RF/RG (=2 in this

example). Using these two gains, knowing the Gain Band-

width Product (GBP) for the OPA552 (12MHz), and

targeting a maximally flat 2nd-order, low-pass Butterworth

frequency response (Q = 0.707), the key frequency in the

compensation can be found.

For the values shown in Figure 11, the f–3dB will be

approximately 956kHz. This is less than that predicted by

simply dividing the GBP by NG1. The compensation

network controls the bandwidth to a lower value while

providing the full slew rate at the output and an excep-

tional distortion performance due to increased loop gain at

frequencies below NG1 • Z0. The capacitor values shown

in Figure 11 are calculated for NG1 = 2 and NG2 = 10 with

no adjustment for parasitics.

Actual circuit values can be optimized by check the

small-signal step response with actual load conditions.

Figure 12 shows the small-signal step response of this

OPA552, G = –1 circuit with a 500pF load. It is well-

behaved with no tendency to oscillate. If CS and CF were

removed, the circuit would be unstable.

FIGURE 11. Compensation of the OPA552 for G = 1.

FIGURE 12. Small-Signal Step Response for Figure 11.

SMALL-SIGNAL STEP RESPONSE

OPA552, G = –1, CL = 500pF

Time (1µs/div)

20mV/div

1kΩ

1.88nF

NG1 = 1 + RF/RG = 2

NG2 = 1 + CS/CF = 10

OPA552

+30V

–30V

VIN

VOUT

208pF

1kΩ

OPA552

OPA551, OPA552

14 SBOS100A

www.ti.com

The offset voltage (VOS) of the OPA51 and OPA552 is

specified with a ±30V power supply and the common-

mode voltage centered between the supplies (VS/2 =

0V). Additional specifications for power supply rejec-

tion and common-mode rejection are provided to allow

the user to easily calculate worst-case excepted offset

under the conditions of a given application.

Power Supply Rejection Ratio (PSRR) is specified in

µV/V. For the OPA551 and OPA552, worst-case PSRR

is 30µV/V, which means for each volt of change in total

power supply voltage, the offset may shift by up to

30µV/V. Common-Mode Rejection Ratio (CMRR) is

specified in dB, which can be converted to µV/V using

the following equation:

CMRR in (V/V) = 10[(CMRR in dB)/–20] (1)

For the OPA551 and OPA552, the worst-case CMRR at

±30mV supply over the full common-mode range is

96dB, or approxmately 15.8µV/V. This means that for

every volt of change in common-mode, the offset may

shift up to 15.8µV. These numbers can be used to

OFFSET VOLTAGE ERROR CALCULATION

calculate excursions from the specified offset voltage

under different applications conditions. For example, a

common application might configure the amplifier with

a –48 single supply with –6V common-mode. This

configuration represents a 12V variation in power sup-

ply: ±30V or 60V in the offset specification versus 48V

in the application. In addition, this configuration has an

18V variation in common-mode voltage: VS/2 = –24V is

the specification for these power supplies, but the com-

mon-mode voltage is –6V in the application.

Calculation of the worst-case expected offset would be

as follows:

Worst-case VOS =(2)

maximum specified VOS

+ (power supply variation • PSRR

+ (common-mode variation • CMRR)

VOSwc = 5mV + (12V • 30µV/V) + (18V • 15.8µV/V)

= ±5.64mV

PACKAGING INFORMATION

Orderable Device Status (1) Package

Type Package

Drawing Pins Package

Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)

OPA551FA OBSOLETE DDPAK KTW 7 TBD Call TI Call TI

OPA551FA/500 ACTIVE DDPAK KTW 7 500 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA551FA/500G3 ACTIVE DDPAK KTW 7 500 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA551FAKTWT ACTIVE DDPAK KTW 7 50 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA551FAKTWTG3 ACTIVE DDPAK KTW 7 50 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA551PA ACTIVE PDIP P 8 50 Green (RoHS &

no Sb/Br) CU NIPDAU N / A for Pkg Type

OPA551PAG4 ACTIVE PDIP P 8 50 Green (RoHS &

no Sb/Br) CU NIPDAU N / A for Pkg Type

OPA551UA ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA551UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA551UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA551UA/2K5G4 ACTIVE SOIC D 8 TBD Call TI Call TI

OPA551UAE4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA552FA OBSOLETE DDPAK KTW 7 TBD Call TI Call TI

OPA552FA/500 ACTIVE DDPAK KTW 7 500 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA552FA/500G3 ACTIVE DDPAK KTW 7 500 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA552FAKTWT ACTIVE DDPAK KTW 7 50 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA552FAKTWTG3 ACTIVE DDPAK KTW 7 50 Green (RoHS &

no Sb/Br) CU SN Level-2-260C-1 YEAR

OPA552PA ACTIVE PDIP P 8 50 Green (RoHS &

no Sb/Br) CU NIPDAU N / A for Pkg Type

OPA552PAG4 ACTIVE PDIP P 8 50 Green (RoHS &

no Sb/Br) CU NIPDAU N / A for Pkg Type

OPA552UA ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA552UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA552UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA552UA/2K5G4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

OPA552UAG4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br) CU NIPDAU Level-3-260C-168 HR

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

PACKAGE OPTION ADDENDUM

www.ti.com 16-Feb-2009

Addendum-Page 1

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered

at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and

package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS

compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame

retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is

provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the

accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take

reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on

incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited

information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI

to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com 16-Feb-2009

Addendum-Page 2

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

OPA551FA/500 DDPAK KTW 7 500 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2

OPA551FAKTWT DDPAK KTW 7 50 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2

OPA551UA/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

OPA552FA/500 DDPAK KTW 7 500 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2

OPA552FAKTWT DDPAK KTW 7 50 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2

OPA552UA/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

OPA551FA/500 DDPAK KTW 7 500 367.0 367.0 45.0

OPA551FAKTWT DDPAK KTW 7 50 367.0 367.0 45.0

OPA551UA/2K5 SOIC D 8 2500 367.0 367.0 35.0

OPA552FA/500 DDPAK KTW 7 500 367.0 367.0 45.0

OPA552FAKTWT DDPAK KTW 7 50 367.0 367.0 45.0

OPA552UA/2K5 SOIC D 8 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 2

MECHANICAL DATA

MPSF015 – AUGUST 2001

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

KTW (R-PSFM-G7) PLASTIC FLANGE-MOUNT

0.010 (0,25) AM

4201284/A 08/01

0.385 (9,78)

0.410 (10,41)

–A– 0.006

–B–

0.170 (4,32)

0.183 (4,65)

0.000 (0,00)

0.012 (0,305)

0.104 (2,64)

0.096 (2,44)

0.034 (0,86)

0.022 (0,57)

0.050 (1,27)

0.055 (1,40)

0.045 (1,14)

0.014 (0,36)

0.026 (0,66)

0.330 (8,38)

0.370 (9,40)

0.297 (7,54)

0.303 (7,70)

0.0585 (1,485)

0.0625 (1,587)

0.595 (15,1 1)

0.605 (15,37)

0.019 (0,48)

0.017 (0,43)

0°~3°

0.179 (4,55)

0.187 (4,75)

0.056 (1,42)

0.064 (1,63)

0.296 (7,52)

0.304 (7,72)

0.300 (7,62)

0.252 (6,40)

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.

C. Lead width and height dimensions apply to the

plated lead.

D. Leads are not allowed above the Datum B.

E. Stand–of f height is measured from lead tip

with reference to Datum B.

F. Lead width dimension does not include dambar

protrusion. Allowable dambar protrusion shall not

cause the lead width to exceed the maximum

dimension by more than 0.003”.

G. Cross–hatch indicates exposed metal surface.

H. Falls within JEDEC MO–169 with the exception

of the dimensions indicated.

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