T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 1 of 8
JANS 2N3498L thru JANS 2N3501L
compliant RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL and
JANSR
DESCRIPTION
This family of JANS 2N3498L through JANS 2N3501L epitaxial, planar transistors are military
qualified in five RHA (Radiation Hardness Assurance) levels for high-reliability applications.
These devices are also available in TO-39 and low profile surface mount UB packaging.
Microsemi also offers numerous other radi ati on har de n ed transistor products to meet higher
and lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
TO-5 Package
Also available in:
TO-39 (TO-205AD)
package
(leaded)
JANS 2N3498 – 2N3501
UB package
(surface mount)
JANS 2N3501UB
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3498 through 2N350 1 series numbers.
• RHA level JAN qualifications per MIL-PRF-19500/366 (see part nomenclature for all options).
• RoHS compliant by design.
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
radiation harn es s.
• Longer leaded TO-5 package.
• Lightweight.
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N3498L
2N3499L
2N3500L
2N3501L
Unit
Collector-Emitter Voltage VCEO 100 150 V
Collector-Base Voltage VCBO 100 150 V
Emitter-Base Voltage
V
EBO
6.0
6.0
V
Collector Current
I
C
500
300
mA
Thermal Resi stan ce Jun cti on-to-Ambient
R
ӨJA
175
oC/W
Thermal Resi stan ce Jun cti on-to-Case RӨJC 30
o
C/W
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +25 °C (2) PT 1.0
5.0 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Notes: 1. See figure 1.
2. See fi gur e 2.
T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 2 of 8
JANS 2N3498L thru JANS 2N3501L
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nic kel cap.
• TERMINALS: Leads are gold plate d.
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 1.14 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JANSM 2N3498 L
Reliability Level
JANSM = 3K Rads (Si)
JANSD = 10K Rads (Si)
JANSP = 30K Rads (Si)
JANSL = 50K Rads (Si)
JANSR = 100K Rads (Si)
Longer Leaded Package
JEDEC type number
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance
ICEO
Collector cutoff current, base open
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter
IEBO
Emitter cutoff current, collector open
hFE
Common-emitter static forward current transfer ratio
VCEO
Collector-emitter voltage, base open
VCBO
Collector-emitter voltage, emitter open
VEBO
Emitter-base voltage, collector open
T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 3 of 8
JANS 2N3498L thru JANS 2N3501L
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mA, pul se d
2N3498L, 2N3499L
2N3500L, 2N3501L
V(BR)CEO
100
150
V
Collector-Base Cutoff Current
VCB = 50 V
VCB = 75 V
VCB = 100 V
VCB = 150 V
2N3498L, 2N3499L
2N3500L, 2N3501L
2N3498L, 2N3499L
2N3500L, 2N3501L
ICBO
50
50
10
10
nA
nA
µA
µA
Emitter-Base Cutoff Current
VEB = 4.0 V
V
EB
= 6.0 V
IEBO
25
10
nA
µA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 300 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
2N3498L, 2N3500L
2N3499L, 2N3501L
2N3498L, 2N3500L
2N3499L, 2N3501L
2N3498L, 2N3500L
2N3499L, 2N3501L
2N3498L, 2N3500L
2N3499L, 2N3501L
2N3500L
2N3501L
2N3498L
2N3499L
h
FE
20
35
25
50
35
75
40
100
15
20
15
20
120
300
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
I
C
= 150 mA, I
B
= 15 mA
All Types
2N3498L, 2N3499L
2N3500L, 2N3501L
VCE(sat)
0.2
0.6
0.4
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
I
C
= 150 mA, I
B
= 15 mA
All Types
2N3498L, 2N3499L
2N3500L, 2N3501L
VBE(sat)
0.8
1.4
1.2
V
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mA, VCE = 20 V, f = 100 MHz |hfe| 1.5 8.0
Output Capacitance
VCB = 10 V, IE = 0,
100 kHz < f < 1.0 MHz
2N3498L, 2N3499L
2N3500L, 2N3501L
Cobo
10
8.0
pF
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz
Cibo
80
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%.
T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 4 of 8
JANS 2N3498L thru JANS 2N3501L
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
V
EB
= 5 V; I
C
= 150 mA; I
B1
= 15 mA
t
on
115
ns
Turn-Off Time
I
C
= 150 mA; I
B1
= I
B2
= -15 mA
t
off
1150
ns
SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053)
DC Tests
TC = +25 ºC, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 V, IC = 500 mA 2N3498L, 2N3499L
VCE = 16.67 V, IC = 300 mA 2N3500L, 2N3501L
Test 2
VCE = 50 V, IC = 100 mA All Types
Test 3
VCE = 80 V, IC = 40 mA All Types
Clamped Switching
TA = +25 ºC
Test 1
IB = 85 mA, IC = 500 mA 2N3498L, 2N3499L
I
B
= 50 mA, I
C
= 300 mA 2N3500L, 2N3501L
Collector to Emitter Voltage VCE (Volts)
Maximum Safe Operating Area
Collector Current I
C
(Milliamperes)
T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 5 of 8
JANS 2N3498L thru JANS 2N3501L
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
V
I
C
= 10 mA
2N3498L, 2N3499L
2N3500L, 2N3501L
100
150
Collector-Base Cutoff Current
ICBO
V
CB
= 100 V
VCB = 150 V
VCB = 50 V
VCB = 75 V
2N3498L, 2N3499L
2N3500L, 2N3501L
2N3498L, 2N3499L
2N3500L, 2N3501L
20
20
100
100
µA
µA
nA
nA
Collector to Emitter Cutoff
ICEO
2 µA
V
CE
= 80 V
VCE = 120 V
2N3498L, 2N3499L
2N3500L, 2N3501L
Emitter-Base Cutoff Current
IEBO
nA
µA
V
EB
= 4.0 V
VEB = 6.0 V
50
20
Forward-Current Transfer Ratio
[hFE]
I
C
= 0.1 mA, V
CE
= 10 V
2N3498L, 2N3500L
2N3499L, 2N3501L
[10]
[17.5]
I
C
= 1.0 mA, V
CE
= 10 V
2N3498L, 2N3500L
2N3499L, 2N3501L
[12.5]
[25]
I
C
= 10 mA, V
CE
= 10 V
2N3498L, 2N3500L
2N3499L, 2N3501L
[17.5]
[37.5]
I
C
= 150 mA, V
CE
= 10 V
2N3498L, 2N3500L
2N3499L, 2N3501L
[20]
[50]
120
300
I
C
= 300 mA, V
CE
= 10 V
2N3500L
2N3501L
[7.5]
[10]
I
C
= 500 mA, V
CE
= 10 V
2N3498L
2N3499L
[7.5]
[10]
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 10 mA, I
B
= 1.0 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
All Types
2N3498L, 3N3499L
2N3500L, 2N3501L
0.23
0.69
0.46
Base-Emitter Saturation Voltage
VBE(sat)
V
I
B
= 10 mA, I
B
= 1.0 mA
IB = 300 mA, IB = 30 mA
IB = 150 mA, IB = 15 mA
All Types
2N3498L, 3N3499L
2N3500L, 2N3501L
0.92
1.61
1.38
T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 6 of 8
JANS 2N3498L thru JANS 2N3501L
GRAPHS
TA (°C) (Ambient)
FIGURE 1
Derating for all devices (RӨJA)
TC (°C) (Case)
FIGURE 2
Derating for all devices (RӨJC)
DC Operation Maximum Rating (W)
DC Operation Maximum Rating (W)
T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 7 of 8
JANS 2N3498L thru JANS 2N3501L
GRAPHS (continued)
Time (s)
FIGURE 3
Thermal Impedance Graph (RӨJA)
Time (s)
FIGURE 4
Thermal Impedance Graph (RӨJC)
Theta (oC/W)
Theta (oC/W)
T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 8 of 8
JANS 2N3498L thru JANS 2N3501L
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handli ng.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -. 000 inch (0.00 mm) below seating plane sha ll be
within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or
by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall not
exceed .042 inch (1.07 mm) within L1 and beyond LL minimum.
8. Lead design atio n, shall be as follows: 1 - emitter, 2 - base, 3 - collector.
9. Lead number thr ee is electr i ca lly connected t o case.
10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
11. Symbol r applied to both inside corners of tab.
12. All three leads.
13. In accordance with ASME Y14.5M, diam eters are equivalent to Φx symbology.
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD
0.016
0.021
0.41
0.53
7
LL
1.500
1.750
38.10
44.50
7, 12
LU 0.016 0.019 0.41 0.48 7, 12
L1
0.050
1.27
12
L2
0.250
6.35
12
P
0.100
2.54
5
Q
0.050
1.27
4
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.71
0.86
10, 11
r
0.010
0.25
11
α
45° TP
45° TP
6
