BPW34FASE9087-Z - OSRAM GmbH

BPW 34 FA

Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing

Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing

Lead (Pb) Free Product - RoHS Compliant

BPW 34 FAS BPW 34 FAS (R18R)

2005-05-10 1

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

Wesentliche Merkmale

• Speziell geeignet für den Wellenlängenbereich

von 830 nm bis 880 nm

• Kurze Schaltzeit (typ. 20 ns)

• DIL-Plastikbauform mit hoher Packungsdichte

• BPW 34 FAS/(R18R): geeignet für

Vapor-Phase Löten und IR-Reflow Löten

Anwendungen

• IR-Fernsteuerung von Fernseh- und

Rundfunkgeräten, Videorecordern,

Gerätefernsteuerung

• Lichtschranken für Gleich- und

Wechsellichtbetrieb

Typ

Type Bestellnummer

Ordering Code

BPW 34 FA Q62702P1129

BPW 34 FAS Q65110A3121

BPW 34 FAS (R18R) Q65110A2699

Features

• Especially suitable for the wavelength range of

830 nm to 880 nm

• Short switching time (typ. 20 ns)

• DIL plastic package with high packing density

• BPW 34 FAS/(R18R): Suitable for vapor-phase

and IR-reflow soldering

Applications

• IR-remote control of hi-fi and TV sets, video

tape recorders, remote controls of various

equipment

• Photointerrupters

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BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 … + 100 °C

Sperrspannung

Reverse voltage VR

VR (t<2min) 16

32 V

Verlustleistung, TA = 25 °C

Total power dissipation Ptot 150 mW

Kennwerte (TA = 25 °C, λ = 870 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Fotostrom

Photocurrent

VR = 5 V, Ee = 1 mW/cm2

Ip50 (≥ 40) µA

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λS max 880 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectr al range of sensitivity

S = 10% of Smax

λ730 … 1100 nm

Bestrahlungsempfindliche Fläche

Radiant sensitive area A7.00 mm2

Abmessung der bestrahlungsempfindlichen

Fläche

Dimensions of radiant sensitive area

L×B

L×W

2.65 ×2.65 mm ×mm

Halbwinkel

Half angle ϕ±60 Grad

deg.

Dunkelstrom, VR = 10 V

Dark current IR 2 (≤ 30) nA

Spektrale Fotoempfindlichkeit

Spectr al sensitivity Sλ0.65 A/W

Quantenausbeute

Quantum yield η0.93 Electrons

Photon

Leerlaufspannung, Ee = 0.5 mW/cm2

Open-circuit voltage VO320 (≥ 250) mV

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

2005-05-10 3

Kurzschlussstrom, Ee = 0.5 mW/cm2

Short-circuit current ISC 23 µA

Anstiegs- und Abfallzeit des Fotostroms

Rise and fall time of the photocurrent

RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA

tr, tf20 ns

Durchlassspannung, IF = 100 mA, E = 0

Forward voltage VF1.3 V

Kapazität, VR = 0 V, f = 1 MHz, E = 0

Capacitance C072 pF

Temperaturkoeffizient von VO

Temperature coefficient of VO

TCV– 2.6 mV/K

Temperaturkoeffizient von ISC

Temperature coefficient of ISC

TCI0.03 %/K

Rauschäquivalente Strahlungsleistung

Noise equivalent power

VR = 10 V

NEP 3.9 ×10– 14

Nachweisgrenze, VR = 10 V,

Detection limit D* 6.8 ×1012

Kennwerte (TA = 25 °C, λ = 870 nm)

Characteristics (cont’d)

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

------------

cm Hz×

---------------------------

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

2005-05-10 4

Relative Spectral Sensitivity

Srel = f (λ)

Dark Current

IR = f (VR), E = 0

Directional Characteristics

Srel = f (ϕ)

OHF01430

400

rel

0600 800 1000 nm 1200

100

OHF00080

05 10 15 V 20

1000

2000

3000

4000

OHF01402

40 30 20 10

20 40 60 80 100 1200.40.60.81.0

0.2

0.4

0.6

0.8

1.0

100 0

Photocurrent IP = f (Ee), VR = 5 V

Open-Circuit Voltage VO = f (Ee)

Capacitance

C = f (VR), f = 1 MHz, E = 0

OHF01428

-1

10 10 110 210 4

10 0

10 1

10 2

10 34

10 0

µAmV

W/cmµ

OHF00081

-2

-1

10V

100

Total Power Dissipation

Ptot = f (TA)

Dark Current

IR = f (TA), VR = 10 V, E = 0

OHF00958

tot

020 40 60 80 ˚C 100

100

120

140

160

OHF00082

-1

10 0

10 1

10 2

10 3

20 40 60 80 ˚C 100

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

2005-05-10 5

Maßzeichnung

Package Outlines

Maße werden wie folgt angegeben: mm (inch) / Di mensions are specified as follows: mm (inch).

GEOY6643

4.0 (0.157)

3.7 (0.146) 4.3 (0.169)

4.5 (0.177)

5.4 (0.213)

4.9 (0.193)

0.6 (0.024)

0.4 (0.016)

0.6 (0.024)

0.4 (0.016)

1.2 (0.047)

0.7 (0.028)

0.3 (0.012)

0.5 (0.020)

0.8 (0.031)

0.6 (0.024)

Cathode marking

0.6 (0.024)

0.8 (0.031)

1.9 (0.075)

2.2 (0.087)

3.0 (0.118)

3.5 (0.138)

0.6 (0.024)

0.4 (0.016)

Chip position

0.4 (0.016)

0.6 (0.024)

0.35 (0.014)

0.2 (0.008)

0 ... 5˚

5.08 (0.200)

spacing

1.4 (0.055)

Photosensitive area

2.65 (0.104) x 2.65 (0.104)

1.8 (0.071)

BPW 34 FA

BPW 34 FAS

4.5 (0.177)

4.3 (0.169)

4.0 (0.157)

3.7 (0.146)

1.5 (0.059)

1.7 (0.067)

0.9 (0.035)

0.7 (0.028)

Photosensitive area Cathode lead

GEOY6863

0.3 (0.012)

6.7 (0.264)

6.2 (0.244)

1.2 (0.047)

1.1 (0.043)

(0...0.004)

0...5˚

0.2 (0.008)

0.1 (0.004)

1.1 (0.043)

0.9 (0.035)

2.65 (0.104) x 2.65 (0.104)

1.8 (0.071)±0.2 (0.008)

Chip position

0...0.1

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BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

Maße werden wie folgt angegeben: mm (inch) / Di mensions are specified as follows: mm (inch).

BPW 34 FAS (R18R)

4.5 (0.177)

4.3 (0.169)

4.0 (0.157)

3.7 (0.146)

1.5 (0.059)

1.7 (0.067)

0.9 (0.035)

0.7 (0.028)

Photosensitive area Cathode lead

GEOY6916

0.3 (0.012)

6.7 (0.264)

6.2 (0.244)

1.2 (0.047)

1.1 (0.043)

(0...0.004)

0...5˚

0.2 (0.008)

0.1 (0.004)

1.1 (0.043)

0.9 (0.035)

2.65 (0.104) x 2.65 (0.104)

1.8 (0.071)±0.2 (0.008)

0...0.1

Chip position

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

2005-05-10 7

Lötbedingungen BPW 34 FAS Vorbehandlung nach JEDEC Level 4

Soldering Conditions BPW 34 FAS (R18R) Preconditioning acc. to JEDEC Level 4

IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)

IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)

Wellenlöten (TTW) BPW 34 FA (nach CECC 00802)

TTW Soldering (acc. to CECC 00802)

OHLA0687

˚C

120 s max

100

150

200

250

300

Ramp Up

100 s max

50 100 150 200 250 300

Ramp Down

6 K/s (max)

3 K/s (max)

25 ˚C

30 s max

260 ˚C

+0 ˚C

-5 ˚C

245 ˚C

±5 ˚C

240 ˚C

255 ˚C

217 ˚C

Maximum Solder Profile

Recommended Solder Profile

235 ˚C

-0 ˚C

+5 ˚C

Minimum Solder Profile

10 s min

OHLY0598

050 100 150 200 250

100

150

200

250

300

235 C

10 s

C... 260

1. Welle

1. wave

2. Welle

2. wave

5 K/s 2 K/s

ca 200 K/s

CC... 130100

2 K/s Zwangskühlung

forced cooling

Normalkurve

standard curve

Grenzkurven

limit curves

2005-05-10 8

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

Published by

OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written app roval of OSRAM OS.

1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected

to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.

2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the us er may be endangered.