DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. The package is 6-pin lead-less minimold, suitable for surface mount. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES * Low noise : NF = 1.3 dB TYP. * High gain : GP = 18.5 dB TYP. * Low current consumption : ICC = 3.5 mA TYP. @ VCC = 3.0 V * Built-in power-save function * High-density surface mounting : 6-pin lead-less minimold package APPLICATION * Low noise amplifier for GPS and mobile communications ORDERING INFORMATION Part Number PC8211TK-E2 Order Number PC8211TK-E2-A Package Marking 6-pin lead-less minimold (1511 PKG) (PB-Free) 6G Supplying Form * Embossed tape 8 mm wide Note * Pin 1, 6 face the perforation side of the tape * Qty 5 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PC8211TK Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10426EJ02V0DS (2nd edition) Date Published November 2004 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices, Ltd. 2003, 2004 PC8211TK PIN CONNECTIONS (Top View) 2 6G 1 3 6 6 1 5 5 2 4 4 3 INTERNAL BLOCK DIAGRAM INPUT 1 6 VCC GND 2 5 GND 4 OUTPUT Bias PS 2 Pin No. Pin Name 1 INPUT 2 GND 3 PS 4 OUTPUT 5 GND 6 VCC (Bottom View) 3 Data Sheet PU10426EJ02V0DS PC8211TK ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit 4.0 V 232 mW Supply Voltage VCC TA = +25C Power Dissipation of Package PD TA = +85C Operating Ambient Temperature TA -40 to +85 C Storage Temperature Tstg -55 to +150 C Input Power Pin +10 dBm Note Note Mounted on double-side copper-clad 50 x 50 x 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA -25 +25 +85 C Operating Frequency Range fin - 1 575 - MHz ELECTRICAL CHARACTERISTICS (TA = +25C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless otherwise specified) Parameter Circuit Current Symbol ICC Test Conditions No Signal At Power-Saving Mode (VPS 0.8 V) MIN. TYP. MAX. Unit 2.5 3.5 4.5 mA - - 1 A Power Gain GP 15.5 18.5 21.5 dB Noise Figure NF - 1.3 1.5 dB Input 3rd Order Distortion Intercept IIP3 - -12 - dBm Gain = 18.5 dB Point Input Return Loss RLin - 7.5 6.0 dB Output Return Loss RLout - 14.5 10.0 dB ISL - 32.5 - dB VPSon 2.2 - - V VPSoff - - 0.8 V - - 0.5 dB - -4 - dBm -1.5 +2.0 - dBm Isolation Rising Voltage From Power-Saving Mode Falling Voltage From Power-Saving Mode Gain Flatness Gain 1 dB Compression Output Flat fin 2.5 MHz PO (1 dB) Power Output Power PO Pin = -10 dBm Data Sheet PU10426EJ02V0DS 3 PC8211TK OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Power Gain GP Note - 18.5 - dB Noise Figure NF Note - 1.15 - dB Input Return Loss RLin Note - 6.5 - dB Output Return Loss RLout Note - 14.5 - dB Note L1 at test circuit is used wire wound chip inductor by Murata, LQW15A. TEST CIRCUIT C3 33 pF L1 C4 4.7 nH 0.1F IN 1 6 2 5 3 4 1.3 pF C2 L2 22 nH VCC R1 750 VPS High : ON Low : OFF (Power-Save) C1 C5 82 pF OUT 8.2 nH L3 0.1F COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Symbol Form Rating Part Number Maker C1, C4 Chip Capacitor 0.1 F GRM36 Murata C2 Chip Capacitor 1.3 pF GRM36 Murata C3 Chip Capacitor 33 pF GRM36 Murata C5 Chip Capacitor 82 pF GRM36 Murata R1 Resistor 750 RR0816 Susumu L1 Inductor 4.7 nH TFL0510 Susumu L2 Inductor 22 nH TFL0816 or TFL0510 Susumu L3 Inductor 8.2 nH TFL0510 Susumu 4 Data Sheet PU10426EJ02V0DS PC8211TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD VCC 0.1 F 6 22 nH 5 33 pF 4 750 82 pF 4.7 nH IN 8.2 nH 1 2 3 1.3 pF OUT 0.1 F PS Notes 1. 30 x 30 x 0.51 mm double-side copper-clad hydrocarbon ceramic woven glass PWB (Rogers: R04003, r = 3.38). 2. Back side: GND pattern 3. Au plated on pattern 4. 5. represents cutout : Through holes Data Sheet PU10426EJ02V0DS 5 PC8211TK TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) NOISE FIGURE vs. FREQUENCY VOLTAGE GAIN vs. FREQUENCY 24 2.1 VCC = VPS = 3.0 V VCC = VPS = 3.0 V Voltage Gain Gain (dB) 22 Noise Figure NF (dB) 1.9 TA = -40C 20 TA = +25C 18 TA = +85C 1.7 1.5 TA = +85C 1.3 TA = +25C 1.1 0.9 16 TA = -40C 0.7 14 1.5 1.55 OUTPUT POWER (2 tones), IM3 vs. INPUT POWER 5 TA = 25C -5 f1 = 1 575.5 MHz f2 = 1 576.5 MHz 10 Pout -30 TA = -25C -15 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 30 -10 -50 VCC = 3.0 V f = 1 575 MHz 0 1 2 3 4 -90 -50 VCC = VPS = 3.0 V TA = 25C -40 -30 -20 -10 Power-Save Pin Applied Voltage VPS (V) Input Power Pin (dBm) OUTPUT POWER (2 tones), IM3 vs. INPUT POWER OUTPUT POWER (2 tones), IM3 vs. INPUT POWER 30 f1 = 1 575.5 MHz f2 = 1 576.5 MHz Pout -10 0 30 10 f1 = 1 575.5 MHz f2 = 1 576.5 MHz Pout -10 -30 -30 IM3 -50 -50 -70 -90 -50 IM3 -70 Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Voltage Gain Gain (dB) TA = 85C Output Power (2 tones) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) VOLTAGE GAIN vs. POWER-SAVE PIN APPLIED VOLTAGE -25 IM3 -70 VCC = VPS = 3.0 V TA = -40C -40 -30 -20 -10 0 -90 -50 Input Power Pin (dBm) VCC = VPS = 3.0 V TA = 85C -40 -30 -20 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 1.6 Frequency f (GHz) 15 10 1.55 Frequency f (GHz) 25 -35 0.5 1.5 1.6 Data Sheet PU10426EJ02V0DS -10 0 PC8211TK S-PARAMETERS (TA = +25C, VCC = VPS = 3.0 V, monitored at connector on board) S11-FREQUENCY S22-FREQUENCY 1 1 1; 57.094 51.530 5.2072 nH 1.575 000 000 GHz STOP 2 000.000 000 MHz START 100.000 000 MHz START 100.000 000 MHz INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 Output Return Loss RLout (dB) Input Return Loss RLin (dB) 0 -2 -4 -6 -8 -10 -12 0.1 1; 31.739 3.4192 29.554 pF 1.575 000 000 GHz STOP 2 000.000 000 MHz 1.575 GHz 1.0 -5 -10 -15 1.575 GHz -20 -25 0.1 10 1.0 Frequency f (GHz) 10 Frequency f (GHz) POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY 25 0 20 -10 Isolation ISL (dB) Power Gain Gain (dB) -5 15 10 5 1.575 GHz 1.575 GHz -15 -20 -25 -30 -35 -40 -45 0 0.1 1.0 10 -50 0.1 Frequency f (GHz) 1.0 10 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10426EJ02V0DS 7 PC8211TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm) (Bottom View) 0.160.05 1.50.1 0.480.05 0.480.05 (Top View) 1.10.1 0.20.1 0.11+0.1 -0.05 0.550.03 1.30.05 Remark ( ) : Reference value 8 Data Sheet PU10426EJ02V0DS 0.90.1 PC8211TK NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating : 1 time : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10426EJ02V0DS 9 PC8211TK * The information in this document is current as of November, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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M8E 00. 4 - 0110 10 Data Sheet PU10426EJ02V0DS PC8211TK For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406