DESCRIPTION
The
µ
PC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for
GPS and mobile communications.
The package is 6-pin lead-less minimold, suitable for surface mount.
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Low noise : NF = 1.3 dB TYP.
• High gain : GP = 18.5 dB TYP.
• Low current consumption : ICC = 3.5 mA TYP. @ VCC = 3.0 V
• Built-in power-save function
• High-density surface mounting : 6-pin lead-less minimold package
APPLICATION
• Low noise amplifier for GPS and mobile communications
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
µ
PC8211TK-E2
µ
PC8211TK-E2-A 6-pin lead-less minimold
(1511 PKG) (PB-Free) Note
6G • Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PC8211TK
The mark shows major revised points.
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC8211TK
SiGe LOW NOISE AMPLIFIER
FOR GPS/MOBILE COMMUNICATIONS
Document No. PU10426EJ02V0DS (2nd edition)
Date Published November 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2003, 2004
PIN CONNECTIONS
Pin No. Pin Name
1 INPUT
2 GND
3 PS
4 OUTPUT
5 GND
6
5
4
(Bottom View)
1
2
3
1
2
3
(Top View)
6
5
4
6G
6 VCC
INTERNAL BLOCK DIAGRAM
INPUT 1
Bias
2
3
GND
PS
VCC
6
5
4
GND
OUTPUT
Data Sheet PU10426EJ02V0DS
2
µ
PC8211TK
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Conditions Ratings Unit
Supply Voltage VCC TA = +25°C 4.0 V
Power Dissipation of Package PD TA = +85°C Note 232 mW
Operating Ambient Temperature TA −40 to +85 °C
Storage Temperature Tstg −55 to +150 °C
Input Power Pin +10 dBm
Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage VCC 2.7 3.0 3.3 V
Operating Ambient Temperature TA −25 +25 +85 °C
Operating Frequency Range fin − 1 575 − MHz
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless
otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Circuit Current ICC No Signal 2.5 3.5 4.5 mA
At Power-Saving Mode (VPS ≤ 0.8 V) − − 1
µ
A
Power Gain GP 15.5 18.5 21.5 dB
Noise Figure NF − 1.3 1.5 dB
Input 3rd Order Distortion Intercept
Point
IIP3 Gain = 18.5 dB − −12 − dBm
Input Return Loss RLin − 7.5 6.0 dB
Output Return Loss RLout − 14.5 10.0 dB
Isolation ISL − 32.5 − dB
Rising Voltage From Power-Saving
Mode
VPSon 2.2 − − V
Falling Voltage From Power-Saving
Mode
VPSoff − − 0.8 V
Gain Flatness Flat fin ± 2.5 MHz − −
∆
0.5 dB
Gain 1 dB Compression Output
Power
PO (1 dB) − −4 − dBm
Output Power PO Pin = −10 dBm −1.5 +2.0 − dBm
Data Sheet PU10426EJ02V0DS 3
µ
PC8211TK
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Power Gain GP Note − 18.5 − dB
Noise Figure NF Note − 1.15 − dB
Input Return Loss RLin Note − 6.5 − dB
Output Return Loss RLout Note − 14.5 − dB
Note L1 at test circuit is used wire wound chip inductor by Murata, LQW15A.
TEST CIRCUIT
82 pF
22 nH
61
2
3
5
4
4.7 nH
1.3 pF
33 pF
V
PS
0.1 F
µ
8.2 nH
IN
OUT
0.1 F
µ
V
CC
High : ON
Low : OFF (Power-Save)
C3
C2
C1
L1 C4
L2
750 Ω
R1
L3
C5
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol Form Rating Part Number Maker
C1, C4 Chip Capacitor 0.1
µ
F GRM36 Murata
C2 Chip Capacitor 1.3 pF GRM36 Murata
C3 Chip Capacitor 33 pF GRM36 Murata
C5 Chip Capacitor 82 pF GRM36 Murata
R1 Resistor 750 Ω RR0816 Susumu
L1 Inductor 4.7 nH TFL0510 Susumu
L2 Inductor 22 nH TFL0816 or TFL0510 Susumu
L3 Inductor 8.2 nH TFL0510 Susumu
Data Sheet PU10426EJ02V0DS
4
µ
PC8211TK
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
1
3
2
4
5
6
PS
IN OUT
V
CC
33 pF
8.2 nH
82 pF
µ
0.1 F
4.7 nH
22 nH
0.1 F
µ
750 Ω
1.3 pF
Notes
1. 30 × 30 × 0.51 mm double-side copper-clad hydrocarbon ceramic woven
glass PWB (Rogers: R04003, εr = 3.38).
2. Back side: GND pattern
3. Au plated on pattern
4. represents cutout
5. : Through holes
Data Sheet PU10426EJ02V0DS 5
µ
PC8211TK
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
1.5 1.55 1.6
24
22
20
18
16
14
Voltage Gain Gain (dB)
VOLTAGE GAIN vs. FREQUENCY
1.5 1.55 1.6
Frequency f (GHz) Frequency f (GHz)
30
10
–
10
–
30
–
50
–
70
–
90
–
50
–
40
–
30
–
20
–
10 0
25
15
5
–
5
–
15
–
25
–
35
Voltage Gain Gain (dB)
VOLTAGE GAIN vs. POWER-SAVE
PIN APPLIED VOLTAGE
01234
Power-Save Pin Applied Voltage VPS (V)
Input Power
Pin (dBm)
VCC = VPS = 3.0 VVCC = VPS = 3.0 V
TA = +25˚C
TA =
–
40˚C
TA = +85˚C
TA = +25˚C
TA =
–
40˚C
TA = +85˚C
TA =
–
25˚C
TA = 85˚C
TA = 25˚C
VCC = 3.0 V
f = 1 575 MHz
VCC = VPS = 3.0 V
TA = 25˚C
–
50
–
40
–
30
–
20
–
10 0
30
10
–
10
–
30
–
50
–
70
–
90
OUTPUT POWER (2 tones), IM
3
vs. INPUT POWER
Input Power
Pin (dBm)
VCC = VPS = 3.0 V
TA =
–
40˚C
IM3
Pout
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power (2 tones) Pout (dBm)
f1 = 1 575.5 MHz
f2 = 1 576.5 MHz
–
50
–
40
–
30
–
20
–
10 0
30
10
–
10
–
30
–
50
–
70
–
90
OUTPUT POWER (2 tones), IM
3
vs. INPUT POWER
OUTPUT POWER (2 tones), IM3
vs. INPUT POWER
Input Power
Pin (dBm)
VCC = VPS = 3.0 V
TA =
85
˚C
IM3
IM3
Pout
Pout
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power (2 tones) Pout (dBm)
f1 = 1 575.5 MHz
f2 = 1 576.5 MHz
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power (2 tones) Pout (dBm)
f1 = 1 575.5 MHz
f2 = 1 576.5 MHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10426EJ02V0DS
6
µ
PC8211TK
S-PARAMETERS (TA = +25°C, VCC = VPS = 3.0 V, monitored at connector on board)
START 100.000 000 MHz STOP 2 000.000 000 MHz START 100.000 000 MHz STOP 2 000.000 000 MHz
1
1
Input Return Loss RL
in
(dB)
Frequency f (GHz)
1; 57.094 Ω 51.530 Ω 5.2072 nH
1.575 000 000 GHz
1; 31.739 Ω 3.4192 Ω 29.554 pF
1.575 000 000 GHz
S11-FREQUENCY S22-FREQUENCY
–5
0
–10
–20
–25
–30
–35
Isolation ISL (dB)
Frequency f (GHz)
ISOLATION vs. FREQUENCY
–15
–40
–50
0.1 1.0 10
1.575 GHz
–45
Output Return Loss RL
out
(dB)
Frequency f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
0
–5
–10
–15
–20
–25
0.1 1.0 10
1.575 GHz
Power Gain Gain (dB)
Frequency f (GHz)
POWER GAIN vs. FREQUENCY
25
20
15
10
5
0
0.1 1.0 10
1.575 GHz
0
–8
–10
INPUT RETURN LOSS vs. FREQUENCY
–4
–6
–2
–12
0.1 1.0 10
1.575 GHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10426EJ02V0DS 7
µ
PC8211TK
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm)
0.48±0.050.48±0.05
1.5±0.1
1.3±0.05
1.1±0.1
0.55±0.03
0.11+0.1
–0.05 0.16±0.05
0.9±0.10.2±0.1
(Bottom View)
(Top View)
Remark ( ) : Reference value
Data Sheet PU10426EJ02V0DS
8
µ
PC8211TK
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance
difference.
(3) The bypass capacitor should be attached to VCC line.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10426EJ02V0DS 9
µ
PC8211TK
M8E 00. 4 - 0110
The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
Data Sheet PU10426EJ02V0DS
10
µ
PC8211TK
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
µ
PC8211TK
