SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS 
BCW67A  DA BCW67AR  4W
BCW67B  DB BCW67BR  5W
BCW67C  DC BCW67CR  6W
BCW68F  DF BCW68FR  7T
BCW68G  DG BCW68GR  5T
BCW68H  DH BCW68HR  7N
COMPLEMENTARY TYPES
BCW67  BCW65
BCW68  BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW67 BCW68 UNIT
Collector-Emitter Voltage VCES -45 -60 V
Collector-Emitter Voltage VCEO -32 -45 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current(10ms) ICM -1000 mA
Continuous Collector Current IC-800 mA
Base Current IB-100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW67
BCW68
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW67
BCW68
V(BR)CEO -32
-45
VI
CEO
=-10mA
ICEO
=-10mA
BCW67
BCW68
V(BR)CES -45
-60
IC=-10µA
IC
=-10µA
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IEBO
=-10µA
Collector-Emitter
Cut-off Current
BCW67
BCW68
ICES -20
-10
-20
-10
nA
µA
nA
µA
VCES
=-32V
VCES
=-32V ,Tamb
=150°
C
VCES
=-45V
VCES
=-45V , Tamb
=150°C
Emitter-Base Cut-Off Current IEBO -20 nA VEBO
=-4V
Collector-Emitter Saturation Voltage VCE(sat) -0.7
-0.3 V
V
IC
=-100mA, IB
= - 10mA
IC
= -500mA, IB
=-50mA*
Base-Emitter Saturation Voltage VBE(sat) -2 V IC
=-500mA, IB
=-50mA*
Static
Forward
Current
Transfer
BCW67A
BCW68F
hFE 75
100
35
170 250
IC
=-10mA, VCE =-1V
IC
=-100mA, VCE =-1V*
IC
=-500mA, VCE =-2V*
BCW67B
BCW68G
hFE 120
160
60
250 400
IC
=-10mA, VCE
=-1V
IC
=-100mA, VCE
=-1V*
IC
=-500mA, VCE
=-2V*
BCW67C
BCW68H
hFE 180
250
100
350 630
IC
=-10mA, VCE =-1V
IC
=-100mA, VCE =-1V*
IC
=-500mA, VCE =-2V*
Transition Frequency fT100 MHz IC
=-20mA, VCE =-10V
f = 100MHz
Collector-Base Capacitance Ccbo 12 18 pF VCBO =-10V, f =1MHz
Emitter-Base Capacitance Cebo 80 pF VEBO
=-0.5V, f =1MHz
Noise Figure N 2 10 dB IC
= -0.2mA, VCE
=- 5V
RG
=1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC
=-150mA
IB1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
C
B
E
SOT23
BCW67
BCW68
3 - 293 - 30
PART OBSOLETE - USE BCW68H
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS 
BCW67A  DA BCW67AR 4W
BCW67B  DB BCW67BR 5W
BCW67C  DC BCW67CR 6W
BCW68F DF BCW68FR  7T
BCW68G DG BCW68GR 5T
BCW68H  DH BCW68HR 7N
COMPLEMENTARY TYPES
BCW67  BCW65
BCW68  BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW67 BCW68 UNIT
Collector-Emitter Voltage VCES -45 -60 V
Collector-Emitter Voltage VCEO -32 -45 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current(10ms) ICM -1000 mA
Continuous Collector Current IC-800 mA
Base Current IB-100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW67
BCW68
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW67
BCW68
V(BR)CEO -32
-45
VI
CEO
=-10mA
ICEO
=-10mA
BCW67
BCW68
V(BR)CES -45
-60
IC=-10µA
IC
=-10µA
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IEBO
=-10µA
Collector-Emitter
Cut-off Current
BCW67
BCW68
ICES -20
-10
-20
-10
nA
µA
nA
µA
VCES
=-32V
VCES
=-32V ,Tamb
=150°
C
VCES
=-45V
VCES
=-45V , Tamb
=150°C
Emitter-Base Cut-Off Current IEBO -20 nA VEBO
=-4V
Collector-Emitter Saturation Voltage VCE(sat) -0.7
-0.3 V
V
IC
=-100mA, IB
= - 10mA
IC
= -500mA, IB
=-50mA*
Base-Emitter Saturation Voltage VBE(sat) -2 V IC
=-500mA, IB
=-50mA*
Static
Forward
Current
Transfer
BCW67A
BCW68F
hFE 75
100
35
170 250
IC
=-10mA, VCE =-1V
IC
=-100mA, VCE =-1V*
IC
=-500mA, VCE =-2V*
BCW67B
BCW68G
hFE 120
160
60
250 400
IC
=-10mA, VCE
=-1V
IC
=-100mA, VCE
=-1V*
IC
=-500mA, VCE
=-2V*
BCW67C
BCW68H
hFE 180
250
100
350 630
IC
=-10mA, VCE =-1V
IC
=-100mA, VCE =-1V*
IC
=-500mA, VCE =-2V*
Transition Frequency fT100 MHz IC
=-20mA, VCE =-10V
f = 100MHz
Collector-Base Capacitance Ccbo 12 18 pF VCBO =-10V, f =1MHz
Emitter-Base Capacitance Cebo 80 pF VEBO
=-0.5V, f =1MHz
Noise Figure N 2 10 dB IC
= -0.2mA, VCE
=- 5V
RG
=1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC
=-150mA
IB1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
C
B
E
SOT23
BCW67
BCW68
3 - 293 - 30
PART OBSOLETE - USE BCW68H