DATA SH EET
Product specification
Supersedes data of 2000 Oct 17 2003 Aug 04
DISCRETE SEMICONDUCTORS
BLF245B
VHF push-pull power MOS
transistor
M3D096
2003 Aug 04 2
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
FEATURES
•High power gain
•Easy power control
•Good thermal stability
•Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT279A balanced flange
package, with a ceramic cap. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT279A
PIN DESCRIPTION
1 drain 1
2 gate 1
3 gate 2
4 drain 2
5 source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
a
ndbook, halfpage
14
32
5
Top view
MSB018 MBB157
g2
g1
d2
d1
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th=25°C in a push-pull common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 175 28 30 >14 >55
2003 Aug 04 3
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section unless otherwise specified
VDS drain-source voltage −65 V
±VGS gate-source voltage −20 V
IDDC drain current −4.5 A
Ptot total power dissipation Tmb ≤25 °C; total device; both sections equally loaded −75 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from
junction to mounting base total device; both sections equally loaded 2.3 K/W
Rth mb-h thermal resistance from
mounting base to heatsink total device; both sections equally loaded 0.3 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDSon.
(2) Tmb =25°C.
Total device; both sections equally loaded.
handbook, halfpage
MRA922
10−1
1
102
1
10
10
ID
(A)
VDS (V) 102
(1) (2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
40
80
120
04080
P
tot
(W)
120 Th (oC)160
(2)
(1)
MRA929
2003 Aug 04 4
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V(BR)DSS drain-source breakdown voltage ID= 5 mA; VGS =0 65 −−V
I
DSS drain-source leakage current VGS = 0; VDS =28V −−1mA
I
GSS gate-source leakage current ±VGS = 20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage ID= 5 mA; VDS =10V 2 −4.5 V
gfs forward transconductance ID= 0.75 A; VDS = 10 V 600 850 −mS
RDSon drain-source on-state resistance ID= 0.75 A; VGS =10V −0.8 1.5 Ω
IDSX on-state drain current VGS = 10 V; VDS =10V −5−A
C
is input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −60 −pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −40 −pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −4.5 −pF
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
2003 Aug 04 5
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
Fig.4 Temperature coefficient of gate-source
voltageasafunctionofdraincurrent;typical
values per section.
VDS =10V.
handbook, halfpage
2
−8
MGP180
10 102103
1
−6
−4
−2
0
T.C.
(mV/K)
ID (mA)
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
VDS =10V.
handbook, halfpage
048 16
6
0
2
4
12
MGP181
ID
(A)
VGS (V)
Tj = 25 °C
125 °C
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
ID= 0.75 A; VGS =10V.
handbook, halfpage
0
2
1
040 80 160120
MGP182
RDSon
(Ω)
Tj ( C)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
160
0
80
120
40
30
MGP183
C
(pF)
VDS (V)
Cis
Cos
2003 Aug 04 6
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
20
0
10
30
MGP184
Crs
(pF)
VDS (V)
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th=25°C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in a push-pull, common source, class-B test circuit.
Ruggedness in class-B operation
The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the
following conditions:
VDS = 28 V, f = 175 MHz at rated output power.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 175 28 2 ×25 30 >14
typ. 18 >55
typ. 65
2003 Aug 04 7
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
Fig.9 Power gain and efficiency as functions of
output power; typical values.
Class-B operation; VDS = 28 V; IDQ = 2 ×25 mA;
ZL= 8.8 +j12.7 Ω; f = 175 MHz.
handbook, halfpage
01020 40
20
0
10
15
5
80
0
40
60
20
30
MGP185
Gp
(dB)
Gp
PL (W)
ηD
ηD
Fig.10 Load power as a function of input power;
typical values.
Class-B operation; VDS = 28 V; IDQ =2×25 mA;
ZL= 8.8 +j12.7 Ω; f = 175 MHz.
handbook, halfpage
0 0.5 1.0 2.0
40
0
20
30
10
1.5
MGP186
PL
(W)
PIN (W)
2003 Aug 04 8
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
2003 Aug 04 8
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
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handbook, full pagewidth
C11
C12
C17
C10
C9
R6
R2
R1
R4
C20
C19
C16
C18
R8
L11
L16 C25 L20
L22
L21
C26
L18
L19
C5 C6C3 C4 C27
L17L13
L7
L8
L9
L6L4
L5
L2
L1
L3
L12
L15
+VG
+VD
50 Ω
input
D.U.T.
C13
C15
C14
L10
L14
R7
+VD
C7
C8
R5R3
+VG
C21 C22 C23 C24 50 Ω
output
MGP187
C2
C1
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
2003 Aug 04 9
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
List of components (see Fig.11)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (εr= 4.5),
thickness 1⁄16 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on
each side of the board are connected together by means of copper straps and hollow rivets.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1,C2 multilayer ceramic chip capacitor; note 1 270 pF
C3 multilayer ceramic chip capacitor; note 1 24 pF
C4 film dielectric trimmer 4 to 60 pF 2222 809 08002
C5, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF
C6, C22, C24 film dielectric trimmer 5 to 60 pF 2222 809 08003
C7, C9, C12,
C14, C17, C19 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C8, C10 multilayer ceramic chip capacitor; note 1 680 pF
C11, C20 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C13, C18 electrolytic capacitor 10 µF, 63 V
C15, C16 multilayer ceramic chip capacitor; note 1 100 pF
C21, C27 multilayer ceramic chip capacitor; note 1 75 pF
C23 multilayer ceramic chip capacitor; note 1 36 pF
L1, L3, L20, L22 stripline; note 2 55 Ωlength 111 mm
width 2.5 mm
L2, L21 semi-rigid cable 50 Ωlength 111 mm
ext. dia. 2.2 mm
L4, L5 stripline; note 2 49.5 Ωlength 28 mm
width 3 mm
L6, L7 stripline; note 2 49.5 Ωlength 22.5 mm
width 3 mm
L8, L9 stripline; note 2 49.5 Ωlength 4.5 mm
width 3 mm
L10, L11 grade 3B Ferroxcube RF choke 4312 020 36642
L12, L13 stripline; note 2 49.5 Ωlength 21 mm
width 3 mm
L14, L15 4 turns enamelled 1 mm copper wire 70 nH length 9 mm
int. dia. 6 mm
leads 2 ×5mm
L16, L17 stripline; note 2 49.5 Ωlength 30 mm
width 3 mm
L18, L19 stripline; note 2 49.5 Ωlength 26 mm
width 3 mm
R1, R2 0.4 W metal film resistor 10 Ω
R3, R4 10 turns potentiometer 50 Ω
R5, R6 0.4 W metal film resistor 205 kΩ
R7, R8 0.4 W metal film resistor 10 Ω
2003 Aug 04 10
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
Fig.12 Component layout for 175 MHz test circuit.
an
dbook, full pagewidth
MBA378
L11 C19 C20
C18
R8
C17 L21 + L22
L20
L1 + L2
L3
+VG+VD
+VG+VD
C15 R7
C13
C11 C12
L10
C14
L16
L12
L13
L8
L9
R1
C8
C7
R2
C10
C9 L17
L18
L19
C16
L15
L14
C23
C25
C26
C24
C22
C21
C1
C2
C3
C4
C5
C6
L4
L5 L6
L7 C27
handbook, full pagewidth
MBA377
copper
strap
copper
strap
copper
strap
copper
strap
copper
strap
copper
strap
copper
strap
copper
strap
200 mm
110 mm
rivetrivet
rivet
rivet
rivet
rivet
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a
direct contact between the upper and lower sheets.
2003 Aug 04 11
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
Fig.13 Input impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; VDS =28V;I
DQ =2×25 mA;
RGS =10Ω; PL= 30 W (total device).
handbook, halfpage
0 100 200 400
10
−10
0
5
−5
300
MGP188
Zi
(Ω)
ri
xi
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; VDS =28V;I
DQ =2×25 mA;
RGS =10Ω; PL= 30 W (total device).
handbook, halfpage
0
30
20
10
0100 200 400300
MGP189
ZL
(Ω)
RL
XL
f (MHz)
Fig.15 Definition of MOS impedance.
handbook, halfpage
MBA379
ZiZL
Fig.16 Power gain as a function of frequency;
typical values per section.
Class-B operation; VDS =28V;I
DQ =2×25 mA;
RGS =10Ω; PL= 30 W (total device).
handbook, halfpage
0 100 200 400
20
25
0
10
15
5
300
MGP190
Gp
(dB)
f (MHz)
2003 Aug 04 12
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
99-03-29
IEC JEDEC EIAJ
SOT279A
0 5 10 mm
scale
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT279A
D
U1
E1
D1
H1
1
2
4
3
5
A
U2
HE
bQ
F
c
M
C
A
w3
M M
C
w2
q
e
B
w1AB
pM M M
UNIT A
mm
Db
1.65
1.40 0.15
0.10 9.25
9.04 3.05 12.96
11.94 5.97
5.72
6.84
6.01
cE U2
0.250.25 0.51
w3
18.42
qw
2
w
1
F
3.05
2.54
U1
24.90
24.64
H1
D1E1
4.96
4.19
p
3.48
3.23
Q
4.34
4.04
e
5.94
5.74
inches 0.065
0.055 0.006
0.004 0.364
0.356 0.120 0.510
0.470 0.235
0.225
0.269
0.237 0.0100.010 0.0200.725
0.120
0.100 0.980
0.970
0.195
0.165 0.137
0.127 0.171
0.159
0.234
0.226
9.27
9.02 5.97
5.72
0.365
0.355 0.235
0.225
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2003 Aug 04 13
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF245B
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/06/pp14 Date of release: 2003 Aug 04 Document order number: 9397 750 11596
