SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 C 1200 V Tc = 25 C 242 A Tc = 80 C 170 A 150 A ICnom ICRM SEMiX(R) 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 ... 20 V 10 s -40 ... 150 C Tc = 25 C 207 A Tc = 80 C 143 A 150 A VGES tpsc VCC = 600 V VGE 20 V VCES 1200 V Tj = 125 C Tj Inverse diode IF SEMiX251GD126HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFRM = 2xIFnom 300 A IFSM tp = 10 ms, sin 180, Tj = 25 C 1000 A -40 ... 150 C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 C 4000 V Typical Applications* * AC inverter drives * UPS * Electronic Welding Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 C 1.7 2.1 V Tj = 125 C 2 2.45 V Tj = 25 C 1 1.2 V Tj = 125 C 0.9 1.1 V Tj = 25 C 4.7 6.0 m IGBT Remarks * Case temperatur limited to TC=125C max. * Not for new design VCE(sat) IC = 150 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 C VCC = 600 V IC = 150 A td(on) tr Eon RG on = 1 RG off = 1 Tj = 125 C 5 Tj = 25 C 7.3 9.0 m 5.8 6.5 V 0.1 0.3 mA Tj = 125 C mA f = 1 MHz 10.8 nF f = 1 MHz 0.56 nF f = 1 MHz 0.49 nF 1200 nC 5.00 Tj = 125 C 250 ns Tj = 125 C 45 ns Tj = 125 C 19 mJ Tj = 125 C 525 ns tf Tj = 125 C 100 ns Eoff Tj = 125 C 22 mJ td(off) Rth(j-c) per IGBT 0.15 K/W GD (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 1 SEMiX251GD126HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF SEMiX(R) 13 IRRM Qrr Trench IGBT Modules Err Rth(j-c) SEMiX251GD126HDs * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic Welding Tj = 25 C Tj = 125 C typ. max. Unit 1.6 1.80 V 1.6 1.8 V Tj = 25 C 0.9 1 1.1 V Tj = 125 C 0.7 0.8 0.9 V Tj = 25 C 3.3 4.0 4.7 m 5.3 6.0 m Tj = 125 C IF = 150 A Tj = 125 C di/dtoff = 3950 A/s T = 125 C j VGE = -15 V T j = 125 C VCC = 600 V per diode 4.7 190 A 35 C 14.5 mJ 0.28 K/W Module LCE RCC'+EE' Features min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 C 0.7 m TC = 125 C 1 m 0.04 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 350 g Temperatur Sensor R100 Tc=100C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K Remarks * Case temperatur limited to TC=125C max. * Not for new design GD 2 Rev. 0 - 16.04.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX251GD126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 3 SEMiX251GD126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 16.04.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX251GD126HDs SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 5