IXGH120N30B3 - Zilog - Pdf.Support

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVCES IC= 250μA, VGE = 0V 300 V

VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES 10 μA

VGE = 0V TJ = 125°C 500 μA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 120A, VGE = 15V, Note 1 1.42 1.70 V

TJ = 125°C 1.47 V

DS99797A(07/08)

IXGH120N30B3 VCES = 300V

IC110 = 120A

VCE(sat) ≤≤

≤≤

≤ 1.7V

GenX3TM 300V IGBT

Medium speed low Vsat PT

IGBTs for 10-50 kHz switching

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 300 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ300 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (limited by leads) 75 A

IC110 TC= 110°C 120 A

ICM TC= 25°C, 1ms 480 A

SSOA VGE = 15V, TJ = 125°C, RG = 1Ω ICM = 240 A

(RBSOA) Clamped inductive load @VCE≤ ≤

≤ ≤

≤ 300V

PCTC= 25°C 540 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting torque 1.13 / 10 Nm/lb.in.

TL Maximum lead temperature for soldering 300 °C

TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C

Weight 6 g

G = Gate C = Collector

E = Emitter TAB = Collector

TO-247 (IXGH)

GCE

TAB

Features

zOptimized for low switching losses

zSquare RBSOA

zInternational standard package

Advantages

zHigh power density

zLow gate drive requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH120N30B3

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs IC = 60A, VCE = 10V, Note 1 55 90 S

Cies 6700 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 650 pF

Cres 160 pF

Qg 225 nC

Qge IC = 120A, VGE = 15V, VCE = 0.5 • VCES 38 nC

Qgc 85 nC

td(on) 22 ns

tr 27 ns

td(off) 100 ns

tf 64 ns

td(on) 21 ns

tr 30 ns

td(off) 106 ns

tf 250 ns

RthJC 0.23 °C/W

RthCK 0.21 °C/W

Resistive load, TJ = 125°°

°°

°C

IC = 60A, VGE = 15V

VCE = 240V, RG = 1Ω

Resistive load, TJ = 25°°

°°

°C

IC = 60A, VGE = 15V

VCE = 240V, RG = 1Ω

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXGH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

IXGH120N30B3

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

220

240

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

330

012345678

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fi g . 3. Ou tp ut Ch a r acter isti cs

@ 125ºC

0

40

80

120

160

200

240

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

5V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperatur e

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 240A

I

C

= 60A

I

C

= 120A

Fi g . 5. C ol l ect o r-to - Emit ter Vol ta ge

vs. Gate-to -Emi tter Vo l tag e

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 240A

120A

60A

T

J

= 25ºC

Fi g . 6. I n p u t Ad mi ttan ce

0

25

50

75

100

125

150

175

200

225

250

275

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GE

- Volts

I

C

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH120N30B3

IXYS REF: G_120N30B3(76)08-07-08-B

Fi g. 11. Maxi mum Tr ansi ent Ther mal I mped an c e

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

Fig. 7. T ransconductance

0

20

40

60

80

100

120

140

0 40 80 120 160 200 240 280

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180 200 220 240

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 150V

I

C

= 120A

I

G

= 10mA

Fi g. 9 . R eve r se-B ias Safe Op erating Area

0

30

60

90

120

150

180

210

240

270

50 75 100 125 150 175 200 225 250 275 300 325

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 1

dV / dt < 10V / ns

Fig. 10. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f = 1 MHz

Cies

Coes

Cres

IXGH120N30B3

IXYS REF: G_120N30B3(76)08-07-08-B

Fig. 15. Resistive T urn-off Switching Times

vs. Gate Resi stance

100

125

150

175

200

225

250

275

300

325

350

375

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

R

G

- Ohms

t

f

- Nanoseconds

80

90

100

110

120

130

140

150

160

170

180

190

t

d ( o f f )

- Nanoseconds

I C = 60A

I C = 120A

t

r

t

d(on)

- - - -

TJ = 125ºC, VGE = 15V

VCE = 240V

Fi g. 1 3. Resi sti ve Tur n-o n Rise Time

vs. Collector Current

25

27

29

31

33

35

37

39

60 65 70 75 80 85 90 95 100 105 110 115 120

I

C

- Amperes

t

r

- Nanoseconds

RG

= 1

VGE = 15V

VCE = 240V

TJ = 125ºC

TJ = 25ºC

Fi g . 14. R esi sti ve Tur n -o n Swi tch in g Ti mes

vs. Gate Resistance

28

29

30

31

32

33

34

35

36

37

38

39

40

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

R

G

- Ohms

t

r

- Nanoseconds

17

18

19

20

21

22

23

24

25

26

27

28

29

t

d ( o n )

- Nanoseconds

t

r

t

d(on)

- - - -

TJ = 125ºC, VGE = 15V

VCE = 240V I C = 60A

I C = 120A

Fi g. 1 6. Resi sti ve Turn-off Swi tchi n g Times

vs. Ju n c ti on Temper at u r e

25

50

75

100

125

150

175

200

225

250

275

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

85

90

95

100

105

110

t

d(off)

- Nanoseconds

I C = 60A

I C = 120A

t

f

t

d(off)

- - - -

RG = 1Ω, VGE = 15V

VCE = 240V

Fi g. 1 7. Resi sti ve Turn- o ff Swi tching Times

vs. Collec to r Current

0

25

50

75

100

125

150

175

200

225

250

275

60 65 70 75 80 85 90 95 100 105 110 115 120

I

C

- Amperes

t

f

- Nanoseconds

86

88

90

92

94

96

98

100

102

104

106

108

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

RG = 1Ω, VGE = 15V

VCE = 240V

TJ = 125ºC

TJ = 25ºC

Fi g. 1 2. Resi sti ve Tur n-o n Rise Time

vs. Junction T emperature

25

27

29

31

33

35

37

39

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

RG

= 1

VGE = 15V

VCE = 240V

I C = 120A

I C = 60A