MMBT3906T
PNP General
Purpose Transistor
Features
x Surface Mount SOT-523 Package
x Epitaxial Planar Die Construction
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -40 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current -200 mA
RșJA Typical Thermal Resistance Junction
to Ambient
833 ć/W
PD Power Dissipation 150 mW
TJ Junction Temperature -55 to +150 ć
TSTG Storage Temperature -55 to +150 ć
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-40 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-10PAdc, IE=0)
-40 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=-10PAdc, IC=0)
-5.0 Vdc
ICBO Collector Cut-off Current
(VCB=-30Vdc, IE=0)
-50 nAdc
IEBO Emitter Cut-off Current
(VEB=-5Vdc, IC=0)
-50 nAdc
ON CHARACTERISTICS
hFE DC Current Gain*
(IC=-0.1mAdc, VCE=-1.0Vdc)
(IC=-1.0mAdc, VCE=-1.0Vdc)
(IC=-10mAdc, VCE=-1.0Vdc)
(IC=-50mAdc, VCE=-1.0Vdc)
(IC=-100mAdc, VCE=-1.0Vdc)
60
80
100
60
30
300
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
-0.25
-0.4
Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
-0.65 -0.85
-0.95
Vdc
SOT-523
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.059.0671.501.70
B .030 .033 0.75 0.85
C .057 .069 1.45 1.75
D .020 Nominal 0.50Nominal
E .035 .043 0.90 1.10
G .000 .004 .000 .100
H .028 .031 .70 0.80
J .004 .008 .100 .200
K .010 .014 .25 .35
A
C
B
D
E
GH
DIMENSIONS
K
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
E
B
C
• Marking:3N
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
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