1
Zarlink Semiconductor Inc.
Zarlink, ZL and the Zarlink Semiconductor logo are trademarks of Zarlink Semiconductor Inc.
Copyright 2003-2004, Zarlink Semiconductor Inc. All Rights Reserved.
Features
Single chip mixer/oscillator PLL combination for
multi band tuner for DTT applications
Each mixer oscillator band optimized for w ide
dynamic range
RF input stages allow for either single-ended or
differential drive
PLL frequency synthesizer design ed for low
phase noise performance
Broadband output level detect with onset adjust
PLL frequency synthesizer com patible with
standard digital terrestrial offsets
Four integrated switching ports
•I
2C fast mode co mpliant
ESD protection (Normal ESD handling
procedures should be observed)
Applications
Terrestrial digital receiver systems
Terrestrial analogue receiver systems
Cable receiver systems
Data communications systems
Description
The SL2610 is a mixer oscillator intended primarily
for application in all band tuners, where it performs
image reject downconversion of the RF channel to a
standard 36 MHz or 44 MHz IF.
Each band consists of a low noise preamplifier/mixer
and local oscillator with an external varactor tuned
tank. The band outputs share a common low
impedance SAWF driver stage.
Frequency selection is controlled by the on-board I2C
bus frequency synthesizer. This block also controls
four general purpose switching ports for selectin g the
prefilter/AGC stages.
October 2004
Ordering Information
SL2610/IG/LH1Q 40 Pin MLP Tap e & Reel, Bake & Drypack
SL2610/IG/LH1N 40 Pin MLP Trays, Bake & Drypack
SL2610/IG/LH2Q 40 Pin MLP Tap e & Reel, Bake & Drypack*
SL2610/IG/LH2N 40 Pin MLP Trays, Bake & Drypack*
*Leadfree
-40°C to +85°C
SL2610
Wide Dynamic Range Image Reject MOPLL
Data Sheet
Figure 1 - SL2610 Block Diagram
HI
CONVOP
~~~
BAND LO
BAND MID
BAND
CONVOPB
IFIP
IFIPB
IFOP
IFOPB
AGC BIAS
AGC OUT
HI
BAND LO
BAND MID
BAND
I
2
C
Interface
Port
Interface
REF
DIVIDER
~
PORT P0
PORT P1
PORT P2
PORT P3
PROG
DIVIDER
CHARGE
PUMP
DRIVE
XTAL
XTALCAP
SDA SCL ADD
IF
SELECT
SL2610 Data Sheet
2
Zarlink Semiconductor Inc.
The SL2610 has high intermod ulation intercept performance so offering high signal to spurious performance in
the presence of higher amplitude inte rferers or in the presence of a wide ba ndwidth composite input signal.
An output broadband level detect circuit is included for control of the tuner front end AGC.
Figure 2 - Pin Allocation Diagram
Quick Reference Data
Characteristics Units
Frequency range: LOW band 50-500 MHz
MID band 50-500 MHz
HIGH band 200-900 MHz
Conversion gain * 32 ± 2dB
Noise figure 13 dB
Typical Image Reject 35 dB
P1dB input referred, Converter section only 106 dBuV
IP3 input referred, Converter section only 14 dBm
IP2 input referred, Converter section only 48 dBm
LO phase noise (free running) @ 10 kHz offset -90 dBc/Hz
@ 100 kHz offset -110 dBc/Hz
PLL phase noise -158 dBc/Hz
Maximum composite output amplitude 3 dBm
* Assuming 2 dB shaping filter loss in external IF pa th.
LH40
PORT P3
VccRF
HI INPUT
PORT P2
PORT P1
MID INPUT
LOLOWOP
LOLOWOPB
LOMIDOP
VccLO
LOHIIP
LOHIOP
LOHIOPB
LOHIIPB
VccLO
MID INPUTB
VccRF
LO INPUT
IFOPB
IFOP
AGCBIAS
VCCIF
IFIPB
IFIP
ADD
CONVOP
CONVOPB
VccDIG
LO INPUTB
VccRF
AGCOUT
PORT P0
CHARGE PUMP
XTAL CAP
DRIVE
XTAL
SDA
SCL
LOMIDOPB
HI INPUTB
VEE
(PACKAGE
PADDLE)
Pin 1
SL2610 Data Sheet
3
Zarlink Semiconductor Inc.
Figure 3 - SL2610 Ev aluation B oard Sch ematic
C14
2p2
C13
2p2
C12
2p2
C11
2p2
L5
22nH
L6
8n2H
C16
100pF C15
5pF
R6
4K7
gnd
SDA
3VDD
4GND
5SCL
6
CN1
I2C
gnd
R11
4K7
R10
4K7
+5V
C17
100nF
C19
47pF
C18
47pF
X1
4 MHz
gnd
C20
47pF
R7
33K
TR1
BCW31
gnd
R8
20K
+30V
R9
18K
C21
1n5F
gnd
VT
+5V
+5V
+5V
+5V
+5V
+5V
L4
82nH
D2
BB640 C10
7pF
L3
36nH
L2
1u5H
C2
6p8F
L1
120nH D1
BB640
R2
1K
R4
4K7
VT
R5
1K
L7
220nH
L8
220nH
C27
82pF
C26
82pF
+5V
C24
1nF
C25
1nF
T1
5:1
SK4
IF OUT
gnd
C3
1nF
C4
1nF
C5
1nF
C6
1nF
C7
1nF
C8
1nF
SK1
HI IN
SK2
MID IN
SK3
LOW IN
gnd
gnd
gnd
R3
1K
gnd
1
2
3
CN2
gnd
+30V
GND
+5V
C29
10nF
C30
10nF
C31
10nF
C32
10nF
C33
10nF
C34
10nF
C35
10nF
gnd
C36
470uF
+30V C28
100nF
gnd
D4
P0
D5
P1
D6
P2
D7
P3
R12
750R
R13
750R
R14
750R
R15
750R
+5V
P0
P1
P2
P3
P0
P1
P2
P3
+5V
C22 10nF
C23 10nF
1
2
3
CN3
ADDRESS
gnd
C1
100pF
R1
4K7
gnd
gnd
C9
100pF
R16
20R
R17
10R R18
10R
D3
BB555
R19
10R
R20
10K
PORT P3
1
Vcc RF
2
HIGH IP
3
HIGH IP B
4
PORT P2
5
PORT P1
6
MID INPUT
7
MID IP B
8
Vcc RF
9
LO INPUT
10
LO INPUT B
11
Vcc RF
12
AGC OUT
13
PORT P0
14
DRIVE
15
CHARGE PUMP
16
XTAL CAP
17
XTAL
18
SDA
19
SCL
20
Vcc DIG 21
CONV OP B 22
CONV OP 23
ADD 24
IF INPUT 25
IF INPUT B 26
Vcc IF 27
AGC BIAS 28
IF O/P 29
IF O/P B 30
VccLO 31
LOHII/PB 32
LOHIO/PB 33
LOHIO/P 34
LOHII/P 35
VccLO 36
LOMIDOPB 37
LOMIDOP 38
LOLOWOPB 39
LOLOWOP 40
Vee = Pin 0 = PACKAGE PADDLE
Gnd
0
IC1
SL2610
VR1
10K
+5V
gnd
gnd
gnd
gnd
gnd
gnd
gnd
gnd
TP2
TP
TP1
TP
POWER
IF OU T
AGC
ADDRESS
I2C Control
RF IN (HIGH)
RF IN (MID)
RF IN (LOW)
gnd
gnd
gnd
gnd
SL2610 Data Sheet
4
Zarlink Semiconductor Inc.
Figure 4 - SL2610 Evaluation Board Layout (Top)
Figure 5 - SL2610 Evaluation Board Layout (Bottom)
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
1.0 Functional Description
The SL2610 is a multi band RF mixer oscillator with image reject and on-board frequency synthesizer. It is intended
primarily for application in all band terrestrial tuners and requires a minimum external component count. It contains
all elements required fo r RF downconversion to a standard IF with the exception of external VCO tank circuits.
The pin allocation is contained in Figure 2 and the block diagram in Figure 1.
1.1 Mixer/oscillator section
In normal application the RF input is interfaced to the selected mixer oscillator preamplifier through the tuner
prefilter and AGC stages. The mixer input is arranged such that the signal can be coupled either differentially or
single-ended, and achieves the specified minimum performance in both configurations. Band input impedances
and NF are contained in Figure 11 and Figure 12 respectively. The converter two tone input spectra are contained
in Figure 13 and Figure 14.
The preamplifier output then feeds the mixer stage where the required channel is image reject downconverted to
the IF frequency. The local oscillator frequency for the downconversion is obtained from the on board local
oscillator, which uses an external varactor tuned tank. Typical VCO applications are contained in Figures 8, 9 and
10.
The output of the mixer is then fed to the converter output driver which presents a matched 200 differential load
to an external IF shaping filter.
The output of the shaping filter is then c oupled into the IFAMP stage, which provides further gain and offers a 50
output impedance to interface direct with the tuner SAW filter.
The SL2610 contains a broadband level detect circuit whose output can be used to control the tuner AGC. The
target level of the AGC detector is cont rolled by the voltage applied to the AGCBIAS pin. The characteristic of the
target level is given in Figure 18.
1.2 PLL Frequency Synthesizer
The PLL frequency synthesizer section contains all the elements necessary, with the exception of a frequency
reference and loop filter, to control a varicap tuned local oscillator, so forming a complete PLL frequency
synthesised source. The device allows for operation with a high comparison frequency and is fabricated in high
speed logic, which enables the generation of a loop with good phase noise performance. It can also be operated
with comparison frequencies appropriate for frequency offsets as required in digital terrestrial (DTT) receivers.
The LO signal is multiplexed from the selected oscillator sec tion to an internal preamplifier which provides gain and
reverse isolation from the divider signals. The output of the preamplifier interfaces direct with the 15-bit fully
programmable divider which is of MN+A architecture, where the dual modulus prescaler is 16/17, the A counter is
4-bits and the M counter is 11 bits.
The output of the programmable divider is fed to the phase comparator where it is compared in both phase and
frequency domain with the comparison frequency. This frequency is derived either from the on-board crystal
controlled oscillator or from an external reference source. In both cases the reference frequency is divided down to
the comparison frequency by the reference divider which is programmable into 1 of 29 ratios as det ailed in Table 1.
The output of the phase d etector feeds a charge pump and loop amplifier section which when used with an external
loop filter integrates the current pulses into the varactor line voltage.
The programmable divider output Fpd, divided by two and the reference divider output Fcomp, can be switched to
port P0 by programming the device into test mode. The test modes are described in Table 5.
SL2610 Data Sheet
6
Zarlink Semiconductor Inc.
2.0 Programming
The SL2610 is controlled by an I2C data bus and is compatible with both standard and fast mode formats.
Data and Clock are fed in on the SDA and SCL lines respective ly as defined by I2C bus forma t. The synthesizer can
either accept data (write mode) or send data (read mode). The LSB of the address byte (R/W) sets the device into
write mode if it is low and read mode if it is high. Tables 2 and 3 illustrate the format of the data. The device can be
programmed to respond to several addresses, which enables the use of more than one sy nthesizer in an I2C bus
system (Tables 2 and 3). Table 4 shows how the address is selected by applying a voltage to the ‘ADD’ input. When
the device receives a valid address byte, it pulls the SDA line low during the acknowledge period and during
following acknowledge periods after further data bytes are received. When the device is programmed into read
mode, the controller accepting the data must pull the SDA line low during all status byte acknowledge periods to
read another status byte. If the controller fails to pull the SDA line low during this period the device generates an
internal STOP condition which inhibits fu rther reading.
2.1 Write mo de
With reference to Table 2, bytes 2 and 3 contain frequency information bits 214-20 inclusive. Byte 4 controls the
reference divider ratio bit s R4-R 0 (Table 1) and the ch arge pump setting bits C1-C0 (Table 6). Byte 5 controls the IF
select (Table 8), the band select function bits BS1-BS0 (Table 7), the switching ports P3-P0 and the test modes
(Table 5).
After reception and acknowledgement of a correct address (byte 1), the first bit of the following byte determines
whether the byte is interpreted as a byte 2 or 4, a logic '0' indicating byte 2 and a logic '1' indicating byte 4. Having
interpreted this byte as either byte 2 or 4 the following data byte will be interpreted as byte 3 or 5 respectively.
Having received two complete data bytes, additional data bytes can be entered, where byte interpretation follows
the same procedure, without re-addressing the device. This procedure continues until a STOP condition is
received. The STOP condition can be generated after any data byte, if however it occurs during a byte
transmission, the previous byte data is retained. To facilitate smooth fine tuning, the frequency data bytes are only
accepted by the device after all 15 bits of frequency data have been received, or after the generation of a STOP
condition.
2.2 Read mode
When the device is in read mode, the status byte read from the device takes the form shown Table 3.
Bit 1 (POR) is the power-on reset indicator, and this is set to a logic '1' if the Vcc supply to the device has dropped
below 3V (at 25oC), e.g., when the device is initially turned ON. The POR is reset to '0' when the read sequence is
terminated by a STOP command. When POR is set high this indicates that the programmed information may have
been corrupted and the device reset to power up condition.
Bit 2 (FL) indicates whether the device is phase locked, a logic '1' is present if the device is locked and a logic '0' if
the device is unlocked.
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
2.3 Programmable features
Synthesiser
programmable divider Function as described above.
Reference programmable
divider Function as described ab ove.
Band selection The required mixer oscillator band and RF input is selected by bits BS1-BS0,
within data byte 5, as defined in Table 7.
IF selection The centre of the image reject passband is selected by IF as defined in Table 8.
Charge pump current The charge pu mp current can be programmed b y bits C1-C0 within d ata byte 4, as
defined in Table 6.
Ports P3-P0 These are configured as NPN open collector buffers and programmed by bits P3-
P0.
Logic ‘1’ = on.
Logic ‘0’ = off (high impedance); default on power up.
In test modes, when TE=1, ports P3-P0 respond according to T2-T0 re spectively
and previously transmitted data is lost.
Test mode The test modes are invoked by setting bits T2–T0 as described in Table 5.
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Table 1 - Reference Division Ratio
R4 R3 R2 R1 R0 Ratio
00000 2
00001 4
00010 8
00011 16
00100 32
00101 64
0 0 1 1 0 128
0 0 1 1 1 256
0 1 0 0 0 not allowed
01001 5
01010 10
01011 20
01100 40
01101 80
0 1 1 1 0 160
0 1 1 1 1 320
1 0 0 0 0 not allowed
10001 6
10010 12
10011 24
10100 48
10101 96
1 0 1 1 0 192
1 0 1 1 1 384
1 1 0 0 0 not allowed
11001 7
11010 14
11011 28
11100 56
11101 112
1 1 1 1 0 224
1 1 1 1 1 448
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Table 2 - Write Data Format (MSB is transmitted first)
Table 3 - Read Data Format (MSB is transmitte d first)
A : Acknowledge bit
MA1,MA0 : Variable address bits (see Table 4)
214-20: Programmable division ratio control bits
R4-R0 : Reference division ratio select (see Table 1)
C1,C0 : Charge pump curren t sele ct (see Table 6)
BS1-BS0 : Band select bits (see Table 7)
IF : IF passband select (see Table 8)
TE : Test mode enable
T2-T0 : Test mode control bits when TE=1 (see Ta ble 5)
P3-P0 : P3-P0 port output states
POR : Power on reset indicator
FL : Phase lock flag
MSB LSB
Address 11000MA1MA00AByte 1
Programmable
divider 02
14 213 212 211 210 2928AByte 2
Programmable
divider 2726252423222120AByte 3
Control data 1 C1C0R4R3R2R1R0AByte 4
Control data IF BS1 BS0 TE P3/T2 P2/T1 P1/T0 P0 A Byte 5
MSB LSB
Address 11000MA1MA01AByte 1
Status Byte POR FL 0 0 0 0 0 0 A Byte 2
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
# Programmed by connecting a 30 k resistor between pin and Vcc
Table 4 - Address Selection
Table 5 - Test Modes
* crystal and selected local oscillator need signals to enable charge pump test modes and to toggle status
byte bit FL
X -’don’t care’
MA1 MA0 Address Input Voltage Level
0 0 0-0.1Vcc
0 1 Open circuit
1 0 0.4Vvcc – 0.6 Vcc #
1 1 0.9 Vcc - Vcc
TE T2 T1 T0 Test Mode Description
0 X X X Normal operation
1 0 0 0 Normal operation
1 0 0 1 Charge pump sink *
Status byte FL set to logic ‘0’
1 0 1 0 Charge pump source *
Status byte FL set to logic ‘0’
1 0 1 1 Charge pump disabled *
Status byte FL set to logic ‘1’
1 1 0 0 Normal operation and Port P0 = Fpd/2
1 1 0 1 Charge pump sink *
Status byte FL set to logic ‘0’
Port P0 = Fcomp
1 1 1 0 Charge pump source *
Status byte FL set to logic ‘0’
Port P0 = Fcomp
1 1 1 1 Charge pump disabled *
Status byte FL set to logic ‘1’
Port P0 = Fcomp
SL2610 Data Sheet
11
Zarlink Semiconductor Inc.
Table 6 - Charge pump current
Table 7 - Band se lect
C1 C0 Current in µA
Min. Typ. Max.
00+
85 +130 +175
01+
190 +280 +370
10+420 +600 +780
11+
930 +1300 +1670
BS1 BS0 Band Selected
0 0 LO Band
0 1 MID Band
1 0 HI band
1 1 HI band
IF input Centre of Image Reject Passband Passband
Bandwidth
0 57 MHz 6 MHz
0 44 MHz 6 MHz
1 36 MHz 8 MHz
Table 8 - IF SELECT function
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Figure 6 - Crystal Oscillator Application
Figure 7 - Ifamp Output Load Condition for Test Purposes
Figure 8 - LO Band VCO Application
XTALCAP
XTAL
47 pF
47 pF
SL2610
to 50 load
SL2610
IFOP
IFOPB
5:1
C2 L1
R1
4K7
L2
1u5H 100pF
D1
BB640 VT
R2
1K
7pF
R16
120nH
20R
C1
LOLOWOP LOLOWOPB
SL2610 Data Sheet
13
Zarlink Semiconductor Inc.
Figure 9 - Mid Band VCO Application
Figure 10 - HI Band VCO Application
R3
1K
L3 36nH
C10
7pF
L4
82nH
R4
4K7 C9
100pF
D2 BB640
LOMIDOP LOMIDOPB
VT
C15
10R
L5 22nH
C16
100pF D3
BB555 5pF R19
L6
C14
C13
C12C11
2p2 2p2 2p2 2p2
R17
10R R18
10R
4K7
R6
R5 1K
VT
8.2nH
LOHIIP LOHIOPLOHIOPB LOHIIPB
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Figure 11 - LO, MID and HI Band Input Impedance
Figure 12 - Low, Mid and Hi Band No ise Figure versus Fre quency
CH1 S11 1 U FS
ST A R T 50.000 000 MHz STOP 900.000 000 M H z
DEV 1 VCC=4.7V
Cor
PRm
12 Mar 200 2 15:10:11
1
2
3
4
1_: 152.31 -12.117 145.94 pF
90.000 00 0 MHz
2_: 150.74
-34.063
220 M H z
3_: 133.48
-62.813
500 M H z
4_: 111.79
-86.926
900 M H z
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Figure 13 - Converter Third Order Two Tone Intermodulation Test Condition Spectrum, Input
Referred, All Bands
Figure 14 - Second Order Two Tone Intermodulation Test Condition Spectrum, Input Referred
-14 dBm
-56 dBm
df
(6 MHz)
f1-df f1 f2 f2+df
Incident power from 50 source
IIM3; -42 dBc
-14 dBm
-54 dBm df
f2-f1 f1 f2
Incident power from 50 source
IIM2; -40 dBc
X
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Figure 15 - Converter Output Impedance (Single Ended)
Figure 16 - IFAMP Input Impedance
CH1 S 11 1 U FS
START 32.000 000 MHz STOP 60.000 000 MHz
DEV4 5.3V
PRm
26 Nov 2002 13:38:57
1
2
3
3_: 101.43 -8.0313 347.67 pF
57.000 000 MHz
1_: 102.92
-5.043
36 MHz
2_: 102.48
-6.4883
44 MHz
CH1 S 11 1 U FS
STA RT 30 .000 0 00 MHz STO P 60 .000 0 00 MHz
C?
Avg
16
PRm
27 Nov 2002 09:17:33
1
2
3
1_: 173 . 8 8 11.09 4 49.045 n H
36.000 000 MHz
2_: 17 8. 8 9
10.01 6
44 MHz
3_: 18 5. 7 7
04.92 2
57 MHz
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Figure 17 - IFAMP Output Impedance (Single Ended)
Figure 18 - Typical AGC Output Level Set versus AGCBIAS Voltage
CH1 S 11 1 U FS
START 30.000 000 MHz STOP 60.000 000 MHz
PRm
27 Nov 2002 08:59:45
1
2
3
1_: 58.967 8.8438 39.098 nH
36.000 000 MHz
2_: 59.295
11.096
44 MHz
3_: 60.443
14.813
57 MHz
100
105
110
115
120
0123456
A GCBIA S Voltage ( V)
Output Lev el (d BΗ
V)
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Electrical Characteristics
Test conditions (unless oth erwise stated)
Tamb = -40oC to 85oC, Vee= 0 V, Vcc=Vcca=Vccd = 5 V +5%
These characteristics are guaranteed by either production test or design. They apply within the specified
ambient temperature and supply voltage unless otherwise stated.
Characteristic Pin Min. Typ. Max. Units Conditions
Supply current 163 196 mA All switching ports off.
LO or MID BAND
ENABLED
Input frequency range 50 500 MHz
Input impedance See Figure 11 and refer to Note 8.
Input Noise Figure 13 dB Tamb=27oC, see Fi gu re 12 , r efe r to No te 2,
no correction for external filtering.
Converter gain 10
8.5 14
12.5 dB
dB At 36 MHz and 44 MHz IF frequency.
At 57 MHz IF frequency.
Conversion gain from 50 single ended
source to differential
200 load, refer to Note 3.
Conversion gain to IF AMP
output 28
25 36
33 dB
dB At 36 MHz and 44 MHz IF frequency.
At 57 MHz IF frequency.
Conversion gain from 50 single ended
source to 50 single-ended load with
output transformer as in Figure 7, see Notes
2 and 3.
Gain variation within
channel 0.4 1 dB Channel bandwidth 8 MHz within operating
frequency range, see note (2), excluding
interstage shaping filter ripple.
Converter input referred
IP2 26 dBm See Figure 14 and refer to Notes 4 and 6.
Assuming ideal power match.
Converter input referred
IM2 -40 dBc See Figure 14 and refer to Notes 4 and 6.
Converter input referred
IP3 7 dBm See Figure 13 and refer to Notes 4 and 6.
Assuming ideal power match.
Converter input referred
IM3 -42 dBc See Figure 13 and refer to Notes 4 and 6.
Input referred P1dB 101 dBµV
Local oscillator operation
range 50 550 MHz Refer to Note 7.
Local oscillator tuning
range 68
200 225
465 MHz
MHz With application as in Figure 8.
With application as in Figure 9.
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Characteristic Pin Min. Typ. Max. Units Conditions
LO phase noise, SSB
@ 1 kHz offset
@ 10 kHz offset
@ 100 kHz offset
-55
-86
-109
dBc/Hz
dBc/Hz
dBc/Hz
With application as in Figure 8 and
Figure 9 outside of PLL loop
bandwidth.
LO temperature stability
80 kHz/oC
Application as in Figure 8 and Figure
9.
No temperature compensatio n.
LO turn on drift
100 kHz
Application as in Figure 8 and Figure
9, frequency drif t over 15 minute
period from turn on at a fixed ambient
temperature.
No temperature compensatio n.
LO to RF input leakage 60 dBµV Application as in Figures 8 and 9.
LO Vcc stability 0.5 MHz/V
LO spurs due to RF
pulling -52 dBc See Note 5.
HI BAND ENABLED
Input frequency range 200 870 MHz
Input impedance See Figure 11 and refer to Note 8.
Input Noise Figure 13.5 dB Tamb=27oC, see Figure 12, refer to
Note 2, no correction for external
filtering.
Converter gain 10
8.5 14
12.5 dB
dB At 36 MHz and 44 MHz IF frequency.
At 57 MHz IF frequency.
Conversion gain from 50 single
ended source to differential
200 load, refer to Note 3.
Conversion gain to
IFAMP output 28
25 36
33 dB
dB At 36 MHz and 44 MHz IF frequency.
At 57 MHz IF frequency.
Conversion gain from 50 single
ended source to 50 single-ended
load with output transformer as in
Figure 7, see Notes 2 and 3.
Gain variation within
channel 0.4 1 dB Channel bandwidth 8 MHz within
operating frequency range, see Note
3, excluding interstage shaping filter
ripple.
Converter input referred
IP2 26 dBm See Figure 14 and refer to Notes 4
and 6. Assuming ideal power match.
SL2610 Data Sheet
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Zarlink Semiconductor Inc.
Characteristic Pin Min. Typ. Max. Units Conditions
Converter input referred IM2 -40 dBc See Figure 14 and refer to Notes 4 and
6.
Converter input referred IP3 7 dBm See Figure 13 and refer to Notes 4 and
6. Assuming ideal power match.
Converter input referred IM3 -42 dBc See Figure 13 and refer to Notes 4 and
6.
Input referred P1dB 101 dBµV
Local oscillator operation
range 200 1000 MHz Refer to Note 7.
Local oscillator tuning range 440 950 MHz With application as in
Figure 10.
LO phase noise, SSB
@ 1 kHz offset
@ 10 kHz offset
@ 100 kHz offset
-55
-86
-109
dBc/Hz
dBc/Hz
dBc/Hz
With application as in Figure 10,
outside of PLL loop bandwidth.
LO temperature sta bility 110 kHz/oCApplication as in Figure 10.
No temperature compensation.
LO turn on drift
100 kHz
Application as in Figure 10, frequency
drift over 15 minute period from turn on
at a fixed ambient temperature.
No temperature compensation.
LO to RF input leakage 60 dBµV Application as in Figure 10.
LO Vcc stability 0.5 MHz/V
LO spurs due to RF pulling -52 dBc See Note 5.
All Bands
Converter output impedance 200 Differential, see Figure 15.
Image rejection 25
29
25
30
35
30
dB
dB
dB
At 36 MHz IF frequency, IF bit = 1.
At 44 MHz IF frequency, IF bit = 0.
At 57 MHz IF frequency, IF bit = 0.
See Table 8.
Tamb = 0oC to +85oC.
Tank Schematics and layouts as in
recommended application. See
Figures 4 and 5.
Isolation between band inputs -60 dBc Level of desired signal converted to IF
output through disabled band relative
to signal converted through enabled
band.
Composite output amplitude 3 dBm
SL2610 Data Sheet
21
Zarlink Semiconductor Inc.
Characteristic Pin Min. Typ. Max. Units Conditions
IFAMP
Input frequency range 32 60 MHz
Input impedance 200 Differential, see Figure 16.
Gain 20
18.5 24
22.5 dB
dB At 36 MHz and 44 MHz IF frequency.
At 57 MHz IF frequency.
Voltage conversion gain from 200
differential source to differential load
as contained in Figure 7, see Note 3.
Output impedance 100 Differential, see Figure 17.
Output limiting 3
2.7 Vp-p
Vp-p At 36 MHz and 44 MHz IF fequency.
At 57 MHz IF frequency.
Differen tial into load as in Figure 7.
IFAMP OPIP3 135 dBµV Two output tones at 2 MHz separation
at 104 dBuV into load as in Figure 7,
see Note 2.
IFAMP OPIM3 -62 dBc Two output tones at 2 MHz separation
at 104 dBuV into load as in Figure 7,
see Note 2.
AGCBIAS Leakage
current 28 -100
-50 100
50 µA
µAVee Vagc1 Vcc
1.5V Vagc1 3.5V
AGCOUT voltage
range 13 0.5 3 V Max load current 20 µA.
AGC output level set See Figure 18.
Supply rejection -52 dBc Spurs introduced on converted outp ut
relative to desired signal by a supply
ripple voltage of 10 mV p-p in the
range 1 kHz to 100 kHz (including
external supply decoupling).
Synthesiser
SDA, SCL
Input high voltage
Input low voltage
Input current
Leakage current
Hysterysis
19, 20
19, 20
3
0
-10
0.4
5.5
1.5
10
10
V
V
µA
µA
V
Input voltage =Vee to Vcc
Input voltage = Vee to 5.5 V, Vcc=Vee
SDA output voltag e 19 0.4
0.6 V
VIsink = 3 mA
Isink = 6 mA
SCL clock rate 20 400 kHz
SL2610 Data Sheet
22
Zarlink Semiconductor Inc.
Notes
1 All power levels are referred to 50 Ω, and 0 dBm = 107 dBµV.
2 Total sys tem w ith fin al load as in Fig ure 7, inclu ding an inte rstage IF sh apin g filter with IL of 2 dB and
characteristic impedanc e of 200 differential.
3 The specified gain is determined by the following formula;
Gs = Gm + Vtr w here G s = ga in as specif ied
Gm = gain as measured with specified load conditions
Vtr = voltage tr ansformation ratio of transformer as in Figure 7
4 Two input tone s within RF o peratin g ra nge at -1 4 dBm fro m 50 single ended source with 200 differential output load. DC output
current must be shunted to Vcc through suitable inductor, i.e. 10 µH.
5 Modulation spurs introduced on local oscillator through injection locking of the local oscillator by an
undesired RF carrier.
Desired carrier at 80 dBµV, undesired carrier at 90 dBµV at an offset frequency of fd plus 42+fc MHz,
where fd is desired carrier frequency, fc is US chrominance sub carrier and 42 equals 7 channel spacings.
6 All intermodulation specifications are measured with a single-ended input.
7 Operation range is defined as the region over which the oscillator presents a negative impedance.
8 Target to achieve 6 dB minimum S11.
Characteristic Pin Min. Typ. Max. Units Conditions
Charge pump output
current 16 See Table 6.
Vpin16 = 2 V
Charge pump output
leakage 16 +3+10 nA Vpin16 = 2 V
Charge pump drive
output current 15 0.5 mA Vpin15 = 0.7 V
Crystal frequenc y 17,
18 4 16 MHz Application as in Figure 6.
Recommended cryst al
series resonance 10 200 4 MHz parallel resonant crystal.
External reference input
frequency 17,
18 4 20 MHz Sinewave coupled through 10 nF
blocking capacitor.
External reference drive
level 18 0.2 0.5 Vpp Sinewave coupled through 10 nF
blocking capacitor.
Phase detector
comparison frequency .03125 0.25 MHz
Equivalent phase noise
at phase detector -158
With 4 MHz crystal, SSB, within loop
bandwidth.
With Fcomp = 125 kHz
RF division ratio 240 32767
Reference division ratio See Table 1.
Switching ports P0-P3
sink current
leakage current
1, 5,
6, 14 10 10 mA
µAVport = 0.7 V
Vport = Vcc
Address select
Input high current
Input low current
24 1
-0.5 mA
mA
See Table 4.
Vin=Vcc
Vin=Vee
SL2610 Data Sheet
23
Zarlink Semiconductor Inc.
Absolute Maximum Ratings
All voltages are referred to Vee at 0 V.
Characteristic Min. Max. Units Conditions
Supply voltage -0.3 6 V
RF input voltage 117 dBµV Transient condition only.
All I/O port DC offsets -0.3 Vcc+0.3 V
Total port current 20 mA
Storage temperature -55 150 oC
Junction temperature 125 oC Pow er applied.
Package thermal resistance, chip
to ambient 27 oC/W Package paddle soldered to ground.
Power consumption at 5.25V 1 W
ESD protection 1 kV Mil-std 883B method 3015 cat1
SL2610 Data Sheet
24
Zarlink Semiconductor Inc.
Figure 19 - Input and Output Interface Circuits (RF Section)
VCC
50 29IFOP
50
30
IFOPB
AGCOUT
VCC
1nF
3, 7, 10
IP
External
to Chip
Typical
133-j62
@ 500 MHz
(see Figure 10)
LOW, MID, HI, RF Input
13
20K
AGC Out
CONVOPB
22 CONVOP
100 100
VCC
1.38 K
95
25
26
IFIP
IFIPB
Converter Output
IF Input
IF Output
LOHIOP
33 LOHIOPB
400
400
34
LOHIIP
V
bias
LOHIPB
500
32
LOHI Input & Output
LOLOWOP
LOMIDOP
Vbias
LOLOW and LOMID Outputs
37
39 LOLOWOPB
LOMIDOPB
2.4 V
9K
VCC
28
AGCBIAS
AGCBIAS Input
4, 8, 11
IPB
VCC
38
40
23
35
40 K
SL2610 Data Sheet
25
Zarlink Semiconductor Inc.
Figure 20 - Input and Output Interface Circuits (PLL Section)
200 µA
13
XTALCAP
18
17
XTAL
Vccd
220
16
15 DRIVE
Vccd
PUMP
24
500 K
Vccd
SCL/SDA ACK
*On SDA only
*
Vccd
120 K
40 K
ADD
P0, P1, P2, P3
Reference oscillator
SDA/SCL (pins 19 and 20)
Output Ports (pins 1, 5, 6, 14)
ADD input
Loop amplifier
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