2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Matched Dual transistors * PNP silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3810J) * JANTX level (2N3810JX) * JANTXV level (2N3810JV) * JANS level (2N3810JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-78 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/336 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 60 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts IC 50 300 one section 600 both sections 1.71one section 3.43 both sections mA Collector Current, Continuous Power Dissipation, TA = 25C PT Derate linearly above 25C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. G mW mW/C TJ -65 to +200 C TSTG -65 to +200 C Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 1 2N3810 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 100 A VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150C VEB = 5 Volts VEB = 4 Volts On Characteristics Typ Max Units Volts 10 10 10 10 10 A nA A A nA 60 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Copyright 2002 Rev. G Min hFE3-1/hFE3-2 VBE |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 A, VCE = 5 Volts TA = -55C IC = 100 A, VCE = 5 Volts VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 A VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 mA IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A Min Typ 100 150 150 125 60 0.9 Max Units 450 450 1.0 0.7 5 3 5 0.7 0.8 0.20 0.25 Volts mVolts mVolts mVolts Volts Volts Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2 2N3810 Silicon PNP Transistor Data Sheet Dynamic Characteristics Parameter Symbol Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Noise Figure NF1 NF2 NF3 Noise Figure (wideband) NF Short Circuit Input Impedance hie Test Conditions VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 100 A, Rg = 3 k f = 100 Hz f = 1 kHz f = 10 kHz VCE = 10 Volts, IC = 100 A, Rg = 3 k 10 Hz < f < 15.7 kHz VCB =10V, IC =1mA, f =1kHz Open Circuit Output Admittance hoe VCB =10V, IC =1mA, f =1kHz Open Circuit reverse Voltage Transfer Ratio hre VCB =10V, IC=100A, f=1kHz Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Copyright 2002 Rev. G |hFE1| |hFE2| hFE Min Typ Max Units 1 1 5 150 600 5 pF 8 pF 7 3 2.5 dB 3.5 dB 3 30 k 5 60 25x10 -4 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 3 of 3