SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N E K Low Leakage Current. : ICBO=50nA(Max.), VCB=120V G J D Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) H CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Base Current IB 100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range 1997. 5. 2 Revision No : 0 2 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L MAXIMUM RATING (Ta=25) 1 C F F DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 1/2 2N5551 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter MIN. TYP. MAX. UNIT VCB=120V, IE=0 - - 50 nA VCB=120V, IE=0, Ta=100 - - 50 A VEB=4V, IC=0 - - 50 nA V(BR)CBO IC=0.1mA, IE=0 180 - - V V(BR)CEO IC=1mA, IB=0 160 - - V V(BR)EBO IE=10 A, IC=0 6 - - V hFE(1) VCE=5V, IC=1mA 80 - - hFE(2) VCE=5V, IC=10mA 80 - 250 hFE(3) VCE=5V, IC=50mA 30 - - VCE(sat)1 IC=10mA, IB=1mA - - 0.15 VCE(sat)2 IC=50mA, IB=5mA - - 0.2 VBE(sat)1 IC=10mA, IB=1mA - - 1.0 VBE(sat)2 IC=50mA, IB=5mA - - 1.0 100 - 300 MHz * * Saturation Voltage Base-Emitter TEST CONDITION * Saturation Voltage fT Transition Frequency VCE=10V, IC=10mA, f=100MHz V V Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200 Noise Figure NF - - 8 VCE=5V, IC=250A Rg=1k, f=10Hz15.7kHz dB * Pulse Test : Pulse Width300 S, Duty Cycle2%. 1997. 5. 2 Revision No : 0 2/2