1997. 5. 2 1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5551
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
ᴌHigh Collector Breakdwon Voltage
: VCBO=180V, VCEO=160V
ᴌLow Leakage Current.
: ICBO=50nA(Max.), VCB=120V
ᴌLow Saturation Voltage
: VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA
ᴌLow Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC600 mA
Base Current IB100 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
1997. 5. 2 2/2Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
2N5551
* Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO
VCB=120V, IE=0 - - 50 nA
VCB=120V, IE=0, Ta=100ᴱ- - 50 ỌA
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 180 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10ỌA, IC=0 6 - - V
DC Current Gain *
hFE(1) VCE=5V, IC=1mA 80 - -
hFE(2) VCE=5V, IC=10mA 80 - 250
hFE(3) VCE=5V, IC=50mA 30 - -
Collector-Emitter *
Saturation Voltage
VCE(sat)1 IC=10mA, IB=1mA -- 0.15
V
VCE(sat)2 IC=50mA, IB=5mA - - 0.2
Base-Emitter *
Saturation Voltage
VBE(sat)1 IC=10mA, IB=1mA -- 1.0
V
VBE(sat)2 IC=50mA, IB=5mA - - 1.0
Transition Frequency fTVCE=10V, IC=10mA, f=100MHz 100 - 300 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz -- 6pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF
Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200
Noise Figure NF VCE=5V, IC=250ỌA
Rg=1kή, f=10Hzᴕ15.7kHz - - 8 dB
